SEMICONDUCTOR KMB2D0N60SA TECHNICAL DATA N-Ch Trench MOSFET General Description This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for portable equipment and SMPS. E B FEATURES L D L 3 H G A 2 VDSS=60V, ID=2A Drain-Source ON Resistance 1 RDS(ON)=160m (Max.) @ VGS=10V RDS(ON)=220m (Max.) @ VGS=4.5V P P K J N C Super Hige Dense Cell Design DIM A B C D E G H J K L M N P MILLIMETERS _ 0.20 2.93 + 1.30+0.20/-0.15 1.30 MAX 0.40+0.15/-0.05 2.40+0.30/-0.20 1.90 0.95 0.13+0.10/-0.05 0.00 ~ 0.10 0.55 0.20 MIN 1.00+0.20/-0.10 7 M SOT-23 MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL N-Ch UNIT Drain-Source Voltage VDSS 60 V Gate-Source Voltage VGSS ID 1.6 DC@TA=70 Pulsed IDP 10 Drain-Source-Diode Forward Current IS 1.0 Drain Power Dissipation V 2.0 DC@TA=25 Drain Current 20 A KND A 1.25 TA=25 PD W 0.8 TA=70 Tj 150 Storage Temperature Range Tstg -55 150 Thermal Resistance, Junction to Ambient RthJA 100 Maximum Junction Temperature Note : Package Mounted on 99.5% Alumina (10 8 /W 0.6mm) PIN CONNECTION (TOP VIEW) D 3 3 2007. 4. 17 2 1 G S 2 Revision No : 0 1 1/5 KMB2D0N60SA ELECTRICAL CHARACTERISTICS (Ta=25 CHARACTERISTIC ) SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT 60 - - V VGS=0V, VDS=60V - - 0.5 VGS=0V, VDS=60V, Tj=55 - - 10 - - 100 nA 1.5 - - V VGS=10V, ID=2A - 125 160 VGS=4.5V, ID=1.7A - 155 220 VGS 10V, VDS=4.5V 6 - - VGS 4.5V, VDS=4.5V 4 - - - 4.6 - - 240 - - 50 - Static BVDSS Drain-Source Breakdown Voltage IDS=250 A, VGS=0V, IDSS Drain Cut-off Current A Gate Leakage Current IGSS VGS= Gate Threshold Voltage Vth VDS=VGS, ID=250 A 2Drain-Source ON Resistance 20V, VDS=0V RDS(ON)* ID(ON)* On-State Drain Current gfs* Forward Transconductance m VDS=4.5V, ID=2.0A S Dynamic Input Capaclitance Ciss Ouput Capacitance Coss Reverse Transfer Capacitance Crss - 15 - Total Gate Charge Qg* - 4.8 10 Gate-Source Charge Qgs* - 0.8 - Gate-Drain Charge Qgd* - 1.0 - Turn-On Delat Time td(on)* - 7 15 Turn-On Rise Time tr* - 10 20 - 17 35 - 6 15 - 0.77 1.2 VDS=25V, f=1MHz, VGS=OV VDS=30V, VGS=10V, ID=2A VDD=30V, VGS=4.5V pF nC ns td(off)* Turn-On Deley Time ID=-1A, RG=6 (NOTE 1) tr* Turn-On Fall Time Source-Drain Diode Ratings VSDF* Source-Drain Forward Voltage NOTE 1> * : Pulse Test : Pulse width <300 2007. 4. 17 VGS=0V, IDR=1A V , Duty cycle < 2% Revision No : 0 2/5 KMB2D0N60SA Fig2. RDS(ON) - ID 10 Drain Current ID (A) Common Source Tc=25 C Pulse Test 5.0V 10V 8 4.5V 6 4 4.0V 2 3.5V VGS=3V 0 0 2 4 6 8 10 Drain Source On Resistance RDS(ON) (Ω) Fig1. ID - VDS 500 Common Source Tc=25 C Pulse Test 400 300 VGS=4.5V 200 VGS=10V 100 0 0 Fig3. ID - VGS 250 Normalized Drain-Source On-Resistance RDS(ON) (mΩ) Drain Current ID (A) VDS=5V Pulse Test 6 4 25 C 125 C -55 C 1 2 3 4 Common Source VDS=10V, ID=2A Pulse Test 200 150 100 50 0 0 0 -75 5 Gate-Source Volatage VGS (V) -50 -25 Drain Current ID (A) Gate Threshold Voltage Vth (V) 3 2 1 0 25 50 75 100 125 150 Junction Temperature Tj ( C ) 2007. 4. 17 50 10 VGS=VDS ID=250µA 4 Pulse Test -25 25 75 100 125 150 Fig6. IS-VSDF 5 Common Source -50 0 Junction Temperature Tj ( C ) Fig5. Vth - Tj 0 -75 16 Fig4. RDS(ON) - Tj 10 Common Source 2 12 Drain - Current ID (A) Drain - Source Voltage VDS (V) 8 8 4 Revision No : 0 Common Source Tc=25 C Pulse Test 8 6 4 2 0 0 0.4 0.8 1.2 1.6 2.0 Source - Drain Forward Voltage VSDF (V) 3/5 KMB2D0N60SA NORMALIZED TRANSIENT THERMAL RESISTANCE Fig7. Transient Thermal Response Curve 1 D = 0.5 0.2 0.1 0.1 0.05 0.02 PDM t1 SINGLE t2 - Duty = t/T 0.01 10-3 10-2 10-1 100 10 102 500 TIME t (sec) 2007. 4. 17 Revision No : 0 4/5 KMB2D0N60SA Fig8. Gate Charge Circuit and Wave Form VGS 10 V Schottky Diode ID 0.5 VDSS ID 1.0 mA Q VDS Qgd Qgs Qg VGS Fig9. Resistive Load Switching RL VDS 90% 0.5 VDSS 6Ω VDS 10 V VGS VGS 10% td(on) tr ton 2007. 4. 17 Revision No : 0 td(off) tf toff 5/5