SEMICONDUCTOR KMA3D0N20SA TECHNICAL DATA N-Ch Trench MOSFET General Description This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for portable equipment and SMPS. E B FEATURES L D L 3 H G A 2 VDSS=20V, ID=3A Drain-Source ON Resistance 1 RDS(ON)=60m (Max.) @ VGS=4.5V RDS(ON)=120m (Max.) @ VGS=2.5V P P K J N C Super Hige Dense Cell Design DIM A B C D E G H J K L M N P MILLIMETERS _ 0.20 2.93 + 1.30+0.20/-0.15 1.30 MAX 0.40+0.15/-0.05 2.40+0.30/-0.20 1.90 0.95 0.13+0.10/-0.05 0.00 ~ 0.10 0.55 0.20 MIN 1.00+0.20/-0.10 7 M SOT-23 MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL N-Ch UNIT Drain-Source Voltage VDSS 20 V Gate-Source Voltage VGSS 10 DC ID 3 Pulsed IDP 12 Drain-Source-Diode Forward Current IS 1.25 Drain Current V A A 1.25 TA=25 Drain Power Dissipation KNB PD W 0.8 TA=70 Tj 150 Storage Temperature Range Tstg -55 150 Thermal Resistance, Junction to Ambient RthJA 100 Maximum Junction Temperature /W Note : Surface Mounted on FR4 Board, t 10sec. PIN CONNECTION (TOP VIEW) D 3 3 2007. 4. 17 2 1 G S 2 Revision No : 0 1 1/5 KMA3D0N20SA ELECTRICAL CHARACTERISTICS (Ta=25 CHARACTERISTIC ) SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT 20 - - V A Static BVDSS Drain-Source Breakdown Voltage IDS=250 A, VGS=0V, Drain Cut-off Current IDSS VGS=0V, VDS=16V - - 1 Gate Leakage Current IGSS VGS= - - 100 Gate Threshold Voltage Vth VDS=VGS, ID=250 A 0.5 0.8 1.5 VGS=4.5V, ID=2.5A - 50 60 VGS=2.5V, ID=1A - 90 120 VGS=4.5V, VDS=5V 8 - - A VDS=5V, ID=2.5A - 6 - S - 330 - - 110 - Drain-Source ON Resistance 10V, VDS=0V RDS(ON)* ID(ON)* On-State Drain Current gfs* Forward Transconductance nA V m Dynamic Input Capaclitance Ciss Ouput Capacitance Coss Reverse Transfer Capacitance Crss - 60 - Total Gate Charge Qg* - 4.7 - Gate-Source Charge Qgs* - 1.6 - Gate-Drain Charge Qgd* - 1.3 - Turn-On Delat Time td(on)* - 9.2 - Turn-On Rise Time tr* VDD=10V, VGS=4.5V - 6.8 - (NOTE 1) - 6.1 - - 8.3 - - 0.81 1.2 VDS=10V, VGS= 0V, f=1MHz, VDS=10V, VGS=4.5V, ID=2.5A pF nC ns td(off)* Turn-On Deley Time ID=1A, RG=6 tr* Turn-On Fall Time Source-Drain Diode Ratings VSDF* Source-Drain Forward Voltage NOTE 1> * : Pulse Test : Pulse width <300 2007. 4. 17 VGS=0V, IDR=1.25A V , Duty cycle < 2% Revision No : 0 2/5 KMA3D0N20SA - VDS Fig2. RDS(on) - ID 12 Common Source Tc=25 C Pulse Test Drain Current ID (A) 10V,3V,2.8V,2.6V 2.4V 8 2.2V 4 VGS=2.0V 0 0 2 4 6 8 10 Drain Source On Resistance RDS(ON) (Ω) Fig1. ID 200 Common Source Tc=25 C Pulse Test 100 VGS=4.5V VGS=10V 0 0 4 - VGS 80 Common Source Normalized Drain-Source On-Resistance RDS(ON) (mΩ) Drain Current ID (A) VDS=5V Pulse Test 8 25 C 4 -55 C 125 C 0 VGS=4.5V, ID=2.5A Pulse Test 60 40 20 0 0 1 2 3 4 -75 5 -50 -25 Fig5. Vth - Tj Drain Current ID (A) 3 2 1 -25 50 10 VGS=VDS ID=250µA 4 Pulse Test -50 25 0 25 50 75 100 125 150 Junction Temperature Tj ( C ) Revision No : 0 75 100 125 150 Fig6. IS - VSDF 5 Common Source 0 -75 0 Junction Temperature Tj ( C ) Gate Source Volatage VGS (V) Gate Threshold Voltage Vth (V) 16 Fig4. RDS(on) - Tj 12 Common Source 2007. 4. 17 12 Drain - Current ID (A) Drain - Source Voltage VDS (V) Fig3. ID 8 Common Source Tc= 25 C Pulse Test 8 6 4 2 0 0 0.4 0.8 1.2 1.6 2.0 Source - Drain Forward Voltage VSDF (V) 3/5 KMA3D0N20SA NORMALIZED TRANSIENT THERMAL RESISTANCE Fig7. Transient Thermal Response Curve 1 0.1 PDM t1 t2 - Duty = t/T 0.01 10-4 10-3 10-2 10-1 100 10 102 103 TIME t (sec) Fig8. Safe Operation Area 10 RDS(ON)LIMIT 10 ms Drain Current ID (A) 100 ms 1s 1 DC 0.1 VGS= 4.5V SINGLE PULSE TA= 25 C 0.03 0.1 1 10 20 50 Drain - Source Voltage VDS (V) 2007. 4. 17 Revision No : 0 4/5 KMA3D0N20SA Fig9. Gate Charge Circuit and Wave Form VGS 10 V Schottky Diode ID 0.5 VDSS ID 1.0 mA Q VDS Qgd Qgs Qg VGS Fig10. Resistive Load Switching RL VDS 90% 0.5 VDSS 6Ω VDS 10 V VGS VGS 10% td(on) tr ton 2007. 4. 17 Revision No : 0 td(off) tf toff 5/5