SEMICONDUCTOR KF3N40W TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for LED Lighting and switching mode power supplies. FEATURES ・VDSS(Min.)= 400V, ID= 2A ・Drain-Source ON Resistance : RDS(ON)=3.4 Ω(max) @VGS =10V ・Qg(typ.) =4.4nC MAXIMUM RATING (Tc=25℃) CHARACTERISTIC SYMBOL RATING UNIT Drain-Source Voltage VDSS 400 V Gate-Source Voltage VGSS ±30 V @TC=25℃ Drain Current @TC=100℃ ID 2* 1.2* A IDP 6* EAS 52 mJ EAR 0.2 mJ dv/dt 4.5 V/ns 2** W 0.02 W/℃ Tj 150 ℃ Tstg -55～150 ℃ Thermal Resistance, Junction-to-Case RthJC 10.0 ℃/W Thermal Resistance, Junction-toAmbient RthJA 62.5** ℃/W Pulsed (Note1) Single Pulsed Avalanche Energy (Note 2) Repetitive Avalanche Energy (Note 1) Peak Diode Recovery dv/dt (Note 3) Drain Power Dissipation TA=25℃ PD Derate above25℃ Maximum Junction Temperature Storage Temperature Range Thermal Characteristics * : Drain current limited by maximum junction temperature. ** : Surface Mounted on FR4 Board 2 Inch×2 Inch×1mm. PIN CONNECTION 2010. 6. 16 Revision No : 0 1/6 KF3N40W ELECTRICAL CHARACTERISTICS (Tc=25℃) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT 400 - - V ID=250μA, Referenced to 25℃ - 0.4 - V/℃ Static Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient BVDSS ΔBVDSS/ΔTj ID=250μA, VGS=0V Drain Cut-off Current IDSS VDS=400V, VGS=0V, - - 10 μA Gate Threshold Voltage Vth VDS=VGS, ID=250μA 2.5 - 4.5 V Gate Leakage Current IGSS VGS=±30V, VDS=0V - - ±100 nA VGS=10V, ID=1A - 2.8 3.4 Ω - 4.4 5.8 - 1.0 - - 2.0 - - 10 - - 11 - - 20 - RDS(ON) Drain-Source ON Resistance Dynamic Qg Total Gate Charge Gate-Source Charge Qgs Gate-Drain Charge Qgd Turn-on Delay time td(on) tr Turn-on Rise time td(off) Turn-off Delay time VDS=320V, ID=2.2A VGS=10V (Note4,5) VDD=200V, ID=2.2A RG=25Ω (Note4,5) VGS=10V nC ns Turn-off Fall time tf - 17 - Input Capacitance Ciss - 163 211 Output Capacitance Coss - 26 - Reverse Transfer Capacitance Crss - 2.5 - - - 2 - - 8 IS=2A, VGS=0V - - 1.4 V VDS=25V, VGS=0V, f=1.0MHz pF Source-Drain Diode Ratings Continuous Source Current IS Pulsed Source Current ISP Diode Forward Voltage VSD Reverse Recovery Time trr IS=2.2A, VGS=0V, - 240 - ns Reverse Recovery Charge Qrr dIs/dt=100A/μs - 0.65 - μC VGS<Vth A Note 1) Repetivity rating : Pulse width limited by junction temperature. Note 2) L = 23mH, IS=2A, VDD=50V, RG = 25Ω, Starting Tj = 25℃. Note 3) IS ≤2A, dI/dt≤200A/㎲, VDD≤BVDSS, Starting Tj = 25℃. Note 4) Pulse Test : Pulse width ≤ 300㎲, Duty Cycle ≤ 2%. Note 5) Essentially independent of operating temperature. Marking 2010. 6. 16 Revision No : 0 2/6 KF3N40W 2010. 6. 16 Revision No : 0 3/6 KF3N40W 2010. 6. 16 Revision No : 0 4/6 KF3N40W 2010. 6. 16 Revision No : 0 5/6 KF3N40W 2010. 6. 16 Revision No : 0 6/6