SEMICONDUCTOR KMB6D0DN35QB TECHNICAL DATA Dual N-Ch Trench MOSFET GENERAL DESCRIPTION This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for DC/DC Converters. FEATURES ・VDSS=35V, ID=6A. ・Drain-Source ON Resistance. RDS(ON)=28mΩ (Max.) @VGS=10V RDS(ON)=42mΩ (Max.) @VGS=4.5V ・Super High Dense Cell Design ・Very fast switching MAXIMUM RATING (Ta=25℃ Unless otherwise noted) CHARACTERISTIC SYMBOL PATING UNIT Drain Source Voltage VDSS 35V V Gate Source Voltage VGSS ±20 V Ta=25℃ ID * 6 A Pulsed(Note1) IDP 24 A IS 1.3 A PD * 2 W Tj -50~150 ℃ Tstg -50~150 ℃ RthJA* 62.5 ℃/W Drain Current Drain Source Diode Forward Current Ta=25℃ Drain Power Dissipation Maximum Junction Temperature Storage Temperature Range Thermal Resistance, Junction to Ambient * : Surface Mounted on FR4 Board (25mm×25mm, 1.5t) 2011. 2. 25 Revision No : 0 1/5 KMB6D0DN35QB ELECTRICAL CHARACTERISTICS (Tj=25℃) UNLESS OTHERWISE NOTED CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Static BVDSS ID=250μA, VGS=0V 35 - - V Drain Cut-off Current IDSS VDS=35V, VGS=0V - - 1 μA Gate Leakage Current IGSS VGS=±20V, VDS=0V - - ±100 nA Gate Threshold Voltage Vth VDS=VGS, ID=250μA 1.0 2.0 3.0 V VGS=10.0V, ID=6A - 24 28 VGS=4.5V, ID=5A - 35 42 VDS=5V, VGS=10V 20 - - A - 20 - S - 460 - - 170 - Drain-Source Breakdown Voltage Drain-Source ON Resistance On-State Drain Current Forward Transconductance RDS(ON) ID(ON) gfs VDS=10V, ID=6A mΩ Dynamic Input Capacitance Ciss Ouput Capacitance Coss Reverse Transfer Capacitance Crss - 50 - Total Gate Charge Qg - 9.0 12.6 Gate-Source Charge Qgs - 1.5 - Gate-Drain Charge Qgd - 3.0 - Total Gate Charge Qg - 5.5 - - 16 - VDD=15V, VGS=10V - 14.5 25.5 ID=1A, RG=6Ω (Note2,3) - 40 - - 11.5 21 - 0.75 1.2 Turn-On Delay Time VDS=28V, VGS=10V, ID=6A (Note2,3) VDS=28V, VGS=5V, ID=6A (Note2,3) td(on) tr Turn-On Rise Time Turn-Off Delay Time VDS=15V, f=1MHz, VGS=0V td(off) tf Turn-Off Fall Time pF nC ns Source-Drain Diode Ratings Source-Drain Forward Voltage VSDF IDR=1.7A, VGS=0V V Note1) Repetivity rating : Pulse width Limited by juntion temperature. Note2) Pulse tesl : Pulse width ≤ 300㎲ , Duty cycle ≤ 2% Note3) Essentially independenl of operating temperature. 2011. 2. 25 Revision No : 0 2/5 KMB6D0DN35QB 2011. 2. 25 Revision No : 0 3/5 KMB6D0DN35QB 2011. 2. 25 Revision No : 0 4/5 KMB6D0DN35QB 2011. 2. 25 Revision No : 0 5/5