SEMICONDUCTOR KMB054N40DB TECHNICAL DATA N-Ch Trench MOSFET General Description This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for Back-light Inverter and Power Supply. A C K D L B FEATURES H J VDSS=40V, ID=54A. E N G Low Drain-Source ON Resistance. F F M : RDS(ON)=8.5m (Max.) @ VGS=10V DIM MILLIMETERS _ 0.20 A 6.60 + _ 0.20 6.10 + B _ 0.30 5.34 + C _ 0.20 D 0.70 + _ 0.15 E 2.70 + _ 0.10 2.30 + F 0.96 MAX G 0.90 MAX H _ 0.20 1.80 + J _ 0.10 2.30 + K _ 0.10 0.50 + L _ 0.10 M 0.50 + 0.70 MIN N : RDS(ON)=11m (Max.) @ VGS=4.5V Super High Dense Cell Design. 1 2 1. GATE 2. DRAIN 3. SOURCE 3 High Power and Current Handling Capability. MAXIMUM RATING (Ta=25 Unless otherwise Noted) CHARACTERISTIC DPAK (1) SYMBOL N-Ch UNIT Drain-Source Voltage VDSS 40 V Gate-Source Voltage VGSS Drain Current DC@TC=25 (Note1) ID Pulsed (Note2) IDP 100 IS 100 Drain-Source-Diode Forward Current Drain Power Dissipation 20 @TC=25 (Note1) @Ta=25 (Note2) PD 54 V A 45 W 3.1 150 Tstg -55 150 (Note1) RthJC 2.8 /W Thermal Resistance, Junction to Ambient (Note2) RthJA 40 /W Storage Temperature Range Thermal Resistance, Junction to Case Type Name A Tj Maximum Junction Temperature Marking KMB 054N40 DB Lot No Note 1) RthJC means that the infinite heat sink is mounted. Note 2) Surface Mounted on 1 1 Pad of 2 oz copper. PIN CONNECTION (TOP VIEW) D 2 2 1 2008. 6. 10 1 3 G S Revision No : 0 3 1/5 KMB054N40DB ELECTRICAL CHARACTERISTICS (Ta=25 CHARACTERISTIC ) SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Static BVDSS VGS=0V, ID=250 A 40 - - V Drain Cut-off Current IDSS VGS=0V, VDS=32V - - 1 A Gate Leakage Current IGSS VGS= - - 100 nA Gate Threshold Voltage Vth VDS=VGS, ID=250 A 1 1.9 3 V VGS=10V, ID=14A - 6.5 8.5 VGS=4.5V, ID=11A - 8.5 11 VGS=10V, ID=14A, Tj=125 - 10.4 14 VDS=10V, ID=20A - 58 - - 1280 - - 250 - Drain-Source Breakdown Voltage RDS(ON)* Drain-Source ON Resistance gfs* Forward Transconductance 20V, VDS=0V m S Dynamic Input Capacitance Ciss Ouput Capacitance Coss Reverse Transfer Capacitance Crss - 125 - VGS=10V Qg* - 25.4 - VGS=5V Qg* - 13.8 - - 5.7 - Total Gate Charge VDS=20V, f=1MHz, VGS=0V VDS=20V, VGS=10V, ID=14A nC Gate-Source Charge Qgs* Gate-Drain Charge Qgd* - 5.4 - Turn-On Delay Time td(on)* - 19 - VDD=20V, VGS=10V - 16 - ID=1A, RG=6 - 60 - - 14 - - 0.8 1.2 tr* Turn-On Rise Time td(off)* Turn-Off Delay Time tf* Turn-Off Fall Time pF ns Source-Drain Diode Ratings VSDF* Source-Drain Forward Voltage Note>* Pulse Test : Pulse width <300 2008. 6. 10 VGS=0V, IS=14A V , Duty cycle < 2% Revision No : 0 2/5 KMB054N40DB Fig2. RDS(ON)-ID VGS=10V 6.0V 5.0V 4.5V 80 60 4.0V 40 20 3.5V 0 0 0.5 1 1.5 2 2.5 Drain Current ID (A) 60 40 25 C 20 Ta=125 C -55 C 0 2.5 3 3.5 4 4.5 VGS=10V 0 0 6 12 18 24 30 20 VGS=10V, ID=14A 16 12 8 4 0 -75 -50 -25 0 25 50 75 100 125 150 Gate Source Volatage VGS (V) Junction Temperature Tj ( C ) Fig5. Vth - Tj Fig6. IS - VSDF 1000 VGS=VDS ID=250µA Reverse Drain Current IS (A) Gate Threshold Voltage Vth (V) 2 1.5 4 3 2 1 100 Ta=125 C Ta=25 C 10 1 0.1 -50 -25 0 25 50 75 100 125 150 Junction Temperature Tj ( C) 2008. 6. 10 VGS=4.5V Fig4. RDS(on) - Tj 80 0 -75 15 Fig3. ID - VGS VDS=5V 5 Ta=25 C Drain - Current ID (A) 100 1 30 Drain - Source Voltage VDS (V) Drain-Source On-Resistance RDS(ON) (mΩ) Drain Current ID (A) 100 Drain Source On Resistance RDS(ON) (mΩ) Fig1. ID - VDS Revision No : 0 0.2 0.4 0.6 0.8 1 1.2 Source - Drain Forward Voltage VSDF (V) 3/5 KMB054N40DB 2008. 6. 10 Revision No : 0 4/5 KMB054N40DB Fig11. Gate Charge Circuit and Wave Form VGS 10 V Schottky Diode ID 0.5 VDSS ID 1.0 mA Q VDS Qgd Qgs Qg VGS Fig12. Resistive Load Switching RL VDS 90% 0.5 VDSS 6Ω VDS 10 V VGS VGS 10% td(on) tr ton 2008. 6. 10 Revision No : 0 td(off) tf toff 5/5