SEMICONDUCTOR KTC2875 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR FOR MUTING AND SWITCHING APPLICATION. FEATURES ・High Emitter-Base Voltage : VEBO=25V(Min.) E B L L ・High Reverse hFE ・Low on Resistance : RON=1Ω(Typ.), (IB=5mA) H 1 P Collector-Base Voltage VCBO 50 V Collector-Emitter Voltage VCEO 20 V Emitter-Base Voltage VEBO 25 V Collector Current IC 300 mA Base Current IB 60 mA Collector Power Dissipation PC 150 mW Junction Temperature Tj 150 ℃ Tstg -55～150 ℃ Storage Temperature Range J UNIT M K RATING P N SYMBOL C MAXIMUM RATING (Ta=25℃) CHARACTERISTIC 3 G A 2 D : Reverse hFE=150(Typ.) (VCE=-2V, IC=-2mA) MILLIMETERS _ 0.20 2.93 + 1.30+0.20/-0.15 1.30 MAX 0.45+0.15/-0.05 2.40+0.30/-0.20 1.90 0.95 0.13+0.10/-0.05 0.00 ~ 0.10 0.55 0.20 MIN 1.00+0.20/-0.10 7 DIM A B C D E G H J K L M N P 1. EMITTER 2. BASE 3. COLLECTOR SOT-23 Marking h FE Rank Lot No. M Type Name ELECTRICAL CHARACTERISTICS (Ta=25℃) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Collector Cut-off Current ICBO VCB=50V, IE=0 - - 0.1 μA Emitter Cut-off Current IEBO VEB=25V, IC=0 - - 0.1 μA DC Current Gain (Note) hFE VCE=2V, IC=4mA 200 - 1200 VCE(sat) IC=30mA, IB=3mA - 0.042 0.3 V Base-Emitter Voltage VBE VCE=2V, IC=4mA - 0.61 - V Transition Frequency fT VCE=6V, IC=4mA - 30 - MHz VCB=10V, IE=0, f=1MHz - 4.8 7 pF - 160 - - 500 - - 130 - Time Turn-on Time ton Storage Time tstg Fall Time tf OUTPUT INPUT 1µs Note : hFE Classification 2009. 3. 12 A: 200~700, 4kΩ 10V DUTY CYCLE < = 2% 50Ω Switching Cob 1kΩ Collector Output Capacitance 3kΩ Collector-Emitter Saturation Voltage VBB =-3V VCC =12V nS B: 350～1200 Revision No : 3 1/3 KTC2875 I C - V CE (REVERSE REGION) I C - VCE 40 -10 160 COMMON EMITTER Ta=25 C 140 120 100 COLLECTOR CURRENT I C (mA) COLLECTOR CURRENT I C (mA) 50 80 30 60 40 20 I B =20µA 10 0 0 0 2 4 6 8 10 COMMON EMITTER Ta=25 C -8 50 40 30 -6 20 -4 I B=10µA -2 0 0 -2 0 COLLECTOR-EMITTER VOLTAGE V CE (V) -4 COLLECTOR-EMITTER SATURATION VOLTAGE V CE(sat) (mV) DC CURRENT GAIN h FE Ta=100 C 1k 500 VCE =6V Ta=25 C Ta=-25 C 300 VCE =2V 100 50 0.3 1 3 10 30 100 500 300 COMMON EMITTER I C /I B =10 100 50 30 10 5 3 1 0.1 COLLECTOR CURRENT I C (mA) 0.3 1 3 TRANSTION FREQUENCY f T (MHz) VCE =2V 00 C 200 Ta= 1 COLLECTOR CURRENT I C (mA) COMMON EMITTER 0 0.4 0.8 Ta=25 C Ta=-25 C 1.2 BASE-EMITTER VOLTAGE VBE (V) 2009. 3. 12 30 100 300 fT - IE 300 0 10 COLLECTOR CURRENT I C (mA) I C - V BE 100 -10 V CE(sat) - I C COMMON EMITTER 3k -8 COLLECTOR-EMITTER VOLTAGE V CE (V) h FE - I C 5k -6 Revision No : 3 1.6 500 300 COMMON EMITTER VCE =6V Ta=25 C 100 50 30 10 5 -0.1 -0.3 -1 -3 -10 -30 -100 EMITTER CURRENT I E (mA) 2/3 KTC2875 R ON - I B 30 f=1MHz I E =0 Ta=25 C 10 5 3 1 0.3 0.5 1 3 5 10 30 COLLECTOR-EMITTER ON RESISTANCE R ON (Ω) COLLECTOR OUTPUT CAPACITANCE C ob (pF) C ob - V CB 100 1kΩ 50 30 10kΩ IB 10 5 3 1 0.5 0.3 0.01 0.03 0.1 0.3 1 3 10 BASE CURRENT I B (mA) COLLECTOR-BASE VOLTAGE VCB (V) COLLECTOR POWER DISSIPATION P C (mW) Pc - Ta 500 400 300 200 100 0 0 25 50 75 100 125 150 AMBIENT TEMPERATURE Ta ( C) 2009. 3. 12 Revision No : 3 3/3