SEMICONDUCTOR KTC3200 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR LOW NOISE AUDIO AMPLIFIER APPLICATION. FEATURES B C The KTC3200 is a transistor for low frequency and low noise applications. A This device is designed to ower noise figure in the region of low signal source impedance, and to lower the pulse noise. This is recommended for the first stages of equalizer amplifiers. N E K Low Noise , VCE=6V, IC=100 A, f=1kHz : NF=0.5dB(Typ.), Rg=1k , VCE=6V, IC=100 A, f=1kHz. J : NF=4dB(Typ.), Rg=100 G D Low Pulse Noise : Low 1/f Noise. High DC Current Gain : hFE=200 700. H F F High Breakdown Voltage : VCEO=120V . 2 C 1 3 MILLIMETERS 4.70 MAX 4.80 MAX 3.70 MAX 0.45 1.00 1.27 0.85 0.45 _ 0.50 14.00 + 0.55 MAX 2.30 0.45 MAX 1.00 M L Complementary to KTA1268. DIM A B C D E F G H J K L M N 1. EMITTER 2. COLLECTOR 3. BASE MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage VCBO 120 V Collector-Emitter Voltage VCEO 120 V Emitter-Base Voltage VEBO 5 V Collector Current IC 100 mA Emitter Current IE -100 mA Collector Power Dissipation PC 625 mW Junction Temperature Tj 150 Tstg -55 150 Storage Temperature Range ELECTRICAL CHARACTERISTICS (Ta=25 CHARACTERISTIC TO-92 ) SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Collector Cut-off Current ICBO VCB=120V, IE=0 - - 100 nA Emitter Cut-off Current IEBO VEB=5V, IC=0 - - 100 nA Collector-Emitter Breakdown Voltage V(BR)CEO IC=1mA, IB=0 120 - - V DC Current Gain hFE(Note) VCE=6V, IC=2mA 200 - 700 VCE(sat) IC=10mA, IB=1mA - - 0.3 V Base-Emitter Voltage VBE VCE=6V, IC=2mA - 0.65 - V Transition Frequency fT VCE=6V, IC=1mA - 100 - MHz VCB=10V, IE=0, f=1MHz - 3.0 - pF VCE=6V, IC=100 A, f=10Hz, Rg=10k - - 6.0 VCE=6V, IC=100 A, f=1kHz, Rg=10k - - 2.0 VCE=6V, IC=100 A f=1kHz, Rg=100 - 4.0 - Collector-Emitter Saturation Voltage Cob Collector Output Capacitance Noise Figure Note : hFE Classification 2003. 1. 15 NF GR:200 400, dB BL:350 700 Revision No : 1 1/2 KTC3200 h FE - I C NF - R g , I C 1k 10k 4 NF 1k 6 8 12 10 DC CURRENT GAIN h FE COMMON EMITTER VCE =6V f=1kHz 3 SIGNAL SOURCE RESISTANCE Rg (Ω) 100k 2 =1 dB NF 4 100 3 =1 dB 2 500 Ta=100 C 300 Ta=25 C Ta=-25 C 100 50 30 COMMON EMITTER VCE =6V 6 8 10 10 0.1 12 1 0.3 3 10 100 30 300 COLLECTOR CURRENT I C (mA) 10 10 1k 100 10k COLLECTOR CURRENT IC (µA) COLLECTOR OUTPUT CAPACITANCE C ob (pF) Cob - VCB NF - R g , I C SIGNAL SOURCE RESISTANCE R g (Ω) 100k COMMON EMITTER VCE =6V 12 f=10Hz 10 8 10k NF NF 1k =1 dB 4 6 10 f=1MHz I E =0 Ta=25 C 5 3 1 0 2 10 20 30 40 50 60 70 80 3 =1d COLLECTOR-BASE VOLTAGE VCB (V) B 2 3 6 10 12 100 8 4 h PARAMETER - VCE 10 10 100 1k 10k 300 COLLECTOR CURRENT I C (µA) h fe 50 30 COMMON EMITTER I E =-1mA f=270Hz Ta=25 C 10 h ie (xkΩ) 5 3 h re (x10 -5 ) 1 0.5 Ω h PARAMETER 100 h oe (xµ ) 1 3 5 10 30 50 100 200 COLLECTOR-EMITTER VOLTAGE VCE (V) 2003. 1. 15 Revision No : 1 2/2