KEXIN 2SB1599

Transistors
SMD Type
Silicon PNP Epitaxial Planar Type
2SB1599
Features
Low collector to emitter saturation voltage VCE(sat).
Mini Power type package, allowing downsizing of the equipment
and automatic insertion through the tape packing and the magazine
packing.
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Unit
Collector-base voltage
VCBO
-50
V
Collector-emitter voltage
VCEO
-40
V
Emitter-base voltage
VEBO
-5
V
Peak collector current
ICP
-3
A
Collector current
IC
-0.6
A
Collector power dissipation
PC
1
W
Junction temperature
Tj
150
Storage temperature
Tstg
-55 to +150
Electrical Characteristics Ta = 25
Parameter
Symbol
Testconditons
Min
Typ
Max
Unit
ICBO
VCB= -20 V, IE = 0
-1
ìA
ICEO
VCE= -12 V, IB = 0
-100
ìA
IEBO
VEB= -5 V, IC = 0
-100
ìA
Collector-base voltage
VCBO
IC = -1 mA, IE = 0
-50
V
Collector-emitter voltage
VCEO
IC = -10 mA, IB = 0
-40
V
hFE
VCE = -5 V, IC = -1A
50
Collector cutoff current
Emitter cutoff current
Forward current transfer ratio
Collector-emitter saturation voltage
VCE(sat) IC = -1.5A, IB = - 0.15A
Base-emitter saturation voltage
VBE(sat) IC = -2A, IB = - 0.2A
Transition frequency
fT
Collector output capacitance
Cob
220
-0.4
-1
V
-1.5
V
VCB = -5 V, IE = 0.5 A, f = 200 MHz
150
MHz
VCB = -5V, IE = 0, f = 1 MHz
70
pF
hFE Classification
1X
Marking
Rank
P
Q
R
hFE
50 100
80 160
100 220
www.kexin.com.cn
1