Transistors SMD Type Silicon PNP Epitaxial Planar Type 2SB1599 Features Low collector to emitter saturation voltage VCE(sat). Mini Power type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO -50 V Collector-emitter voltage VCEO -40 V Emitter-base voltage VEBO -5 V Peak collector current ICP -3 A Collector current IC -0.6 A Collector power dissipation PC 1 W Junction temperature Tj 150 Storage temperature Tstg -55 to +150 Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit ICBO VCB= -20 V, IE = 0 -1 ìA ICEO VCE= -12 V, IB = 0 -100 ìA IEBO VEB= -5 V, IC = 0 -100 ìA Collector-base voltage VCBO IC = -1 mA, IE = 0 -50 V Collector-emitter voltage VCEO IC = -10 mA, IB = 0 -40 V hFE VCE = -5 V, IC = -1A 50 Collector cutoff current Emitter cutoff current Forward current transfer ratio Collector-emitter saturation voltage VCE(sat) IC = -1.5A, IB = - 0.15A Base-emitter saturation voltage VBE(sat) IC = -2A, IB = - 0.2A Transition frequency fT Collector output capacitance Cob 220 -0.4 -1 V -1.5 V VCB = -5 V, IE = 0.5 A, f = 200 MHz 150 MHz VCB = -5V, IE = 0, f = 1 MHz 70 pF hFE Classification 1X Marking Rank P Q R hFE 50 100 80 160 100 220 www.kexin.com.cn 1