Transistors IC SMD Type Silicon NPN Epitaxial 2SC3122 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 1 Low Noise :NF=2.0dB(Typ.)(f=200MHZ) 0.55 High Gain: Gpe=24dB(Typ.)(f=200MHz) +0.1 1.3-0.1 +0.1 2.4-0.1 Features 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 +0.05 0.1-0.01 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 Excellent Forward AGC Characteristics 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO 30 V Collector-emitter voltage VCEO 30 V Emitter-base voltage VEBO 3 V IC 20 mA Collector current Base current IB 10 mA Collector Power Dissipation PC 150 mW Junction temperature Tj 125 Tstg -55 to +125 Storage temperature Range www.kexin.com.cn 1 Transistors IC SMD Type 2SC3122 Electrical Characteristics Ta = 25 Parameter Symbol Collector cut-off current Emitter cut-off current Collector-emitter breakdown voltage Testconditons ICBO VCB = 25V, IE = 0 IEBO VEB = 2V, IC = 0 V(BR)CEO IC=1mA,IB=0 DC current gain hFE Reverse Transfer Capacitance Cre VCB=10V,IE=0,f=1MHz fT Transition Frequency Power Gain Gpe Noise Figure NF AGC Voltage VAGC VCE = 10 V, IC = 2 mA Min Typ Max Unit 100 nA 100 nA 30 V 60 150 300 0.3 0.45 VCE = 10 V, IC = 2mA 400 650 Vce=12V,VAGC=1.4V,f=200MHz 20 24 3.6 VCC=12V,GR=30dB,f=200MHZ * 28 dB 2.0 3.2 dB 4.4 5.1 V *VAGC measured by test circuit shown in Fig.1 when power gain is reduced to 30dB compared that of VAGC at 1.4V Marking Marking 2 HD www.kexin.com.cn pF MHz