Transistors SMD Type NPN Silicon Epitaxial Transistor 2SD1584-Z +0.15 6.50-0.15 +0.2 5.30-0.2 Features +0.15 1.50 -0.15 TO-252 Unit: mm +0.1 2.30-0.1 +0.8 0.50-0.7 2.3 +0.15 4.60-0.15 +0.1 0.60-0.1 3 .8 0 +0.25 2.65 -0.1 0.127 max +0.28 1.50 -0.1 +0.1 0.80-0.1 +0.15 0.50 -0.15 +0.2 9.70 -0.2 High hFE. +0.15 5.55 -0.15 Low VCE(sat). 1 Base 2 Collector 3 Emitter Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Collector-base voltage Parameter VCBO 60 V Collector-emitter voltage VCEO 60 V Emitter-base voltage VEBO 7 V Collector current (DC) IC 3 A Collector Current (pulse) *1 ICP 5 A Total power dissipation Ta = 25 *2 PT 2 W Junction temperature Tj 150 Storage temperature Tstg -55 to +150 * 1Pulse Test PW 10ms, Duty Cycle 50%. *2 when mounted on ceramic substrate of 7.5cm2 X0.7mm www.kexin.com.cn 1 Transistors SMD Type 2SD1584-Z Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Collector cutoff current ICBO VCB = 60 V, IE = 0 Emitter cutoff current IEBO VEB = 5 V, IC = 0 DC current gain * hFE Typ VCE = 5 V, IC = 50 mA 600 1650 VCE = 5 V, IC = 500 mA 800 1800 VCE = 5 V, IC = 3A 500 1400 Max Unit 10 ìA 10 ìA 3200 Collector saturation voltage * VCE(sat) IC = 2.0 A, IB = 20 mA 0.25 0.5 V Base saturation voltage * VBE(sat) IC = 2.0 A, IB = 20 mA 0.8 1.2 V 120 MHz Output capacitance Cob VCB = 10 V, IE = 0, f = 1.0 MHz 20 pF Turn-on time ton IC = 2 A,VCC = 10 V 0.9 ìs Storage time tstg IB1=-IB2=20 mA 2.6 ìs 1 ìs Gain bandwidth product * Pulsed: PW VCE = 5 V, IE = -100 mA fT Fall time RL=5Ù tf 350 ìs, duty cycle 2% hFE Classification 2 Min Marking M L K hFE 800 1600 1000 2000 1600 3200 www.kexin.com.cn 50