Transistors IC SMD Type NPN Silicon Epitaxial Transistor 2SC1621 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 High speed : tstg=20ns MAX. 1 0.55 Features +0.1 1.3-0.1 +0.1 2.4-0.1 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector to base voltage VCBO 40 V Collector to emitter voltage VCEO 20 V Emitter to base voltage VEBO 5 V Collector current (DC) IC 200 mA Total power dissipation PT 200 mW Junction temperature Tj 150 Tstg -55 to +150 Storage temperature range Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit Collector cutoff current ICBO VCB = 30V, IE=0 100 nA Emitter cutoff current IEBO VEB = 4V, IC=0 100 nA DC current gain * hFE VCE = 0.5V , IC = 1mA 40 80 180 Collector-emitter saturation voltage * VCE(sat) IC = 10mA , IB = 1mA 0.13 0.25 V Base-emitter saturation voltage * VBE(sat) IC = 10mA , IB = 1mA 0.74 0.85 V Gain bandwidth product fT Output capacitance Cob Turn-on time ton Storage time tstg Turn-off time toff *. PW VCE = 10V , IE = -10mA VCB = 10V , IE = 0 , f = 1.0MHz See Test Circuit 200 500 MHz 3.0 6.0 pF 12 20 ns 7 20 ns 18 40 ns 350ìs,duty cycle 2% www.kexin.com.cn 1 Transistors IC SMD Type 2SC1621 hFE Classification 2 Marking B2 B3 B4 hFE 40 80 60 120 90 180 www.kexin.com.cn