KEXIN 2SC1621

Transistors
IC
SMD Type
NPN Silicon Epitaxial Transistor
2SC1621
SOT-23
Unit: mm
+0.1
2.9-0.1
+0.1
0.4-0.1
High speed : tstg=20ns MAX.
1
0.55
Features
+0.1
1.3-0.1
+0.1
2.4-0.1
0.4
3
2
+0.1
0.95-0.1
+0.1
1.9-0.1
0-0.1
+0.1
0.38-0.1
+0.1
0.97-0.1
+0.05
0.1-0.01
1.Base
2.Emitter
3.collector
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Unit
Collector to base voltage
VCBO
40
V
Collector to emitter voltage
VCEO
20
V
Emitter to base voltage
VEBO
5
V
Collector current (DC)
IC
200
mA
Total power dissipation
PT
200
mW
Junction temperature
Tj
150
Tstg
-55 to +150
Storage temperature range
Electrical Characteristics Ta = 25
Parameter
Symbol
Testconditons
Min
Typ
Max
Unit
Collector cutoff current
ICBO
VCB = 30V, IE=0
100
nA
Emitter cutoff current
IEBO
VEB = 4V, IC=0
100
nA
DC current gain *
hFE
VCE = 0.5V , IC = 1mA
40
80
180
Collector-emitter saturation voltage *
VCE(sat) IC = 10mA , IB = 1mA
0.13
0.25
V
Base-emitter saturation voltage *
VBE(sat) IC = 10mA , IB = 1mA
0.74
0.85
V
Gain bandwidth product
fT
Output capacitance
Cob
Turn-on time
ton
Storage time
tstg
Turn-off time
toff
*. PW
VCE = 10V , IE = -10mA
VCB = 10V , IE = 0 , f = 1.0MHz
See Test Circuit
200
500
MHz
3.0
6.0
pF
12
20
ns
7
20
ns
18
40
ns
350ìs,duty cycle 2%
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1
Transistors
IC
SMD Type
2SC1621
hFE Classification
2
Marking
B2
B3
B4
hFE
40 80
60 120
90 180
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