Transistors SMD Type NPN Silicon Epitaxial Transistor 2SC3632-Z +0.15 6.50-0.15 +0.2 5.30-0.2 +0.15 1.50 -0.15 TO-252 Unit: mm +0.1 2.30-0.1 +0.8 0.50-0.7 2.3 +0.1 0.60-0.1 3 .8 0 +0.15 5.55 -0.15 0.127 max +0.25 2.65 -0.1 0.5ìs +0.1 0.80-0.1 +0.28 1.50 -0.1 High speed tf +0.2 9.70 -0.2 High voltage VCEO=600V +0.15 0.50 -0.15 Features 1 Base +0.15 4.60-0.15 2 Collector 3 Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector to base voltage VCBO 600 V Collector to emitter voltage VCES 600 V Emitter to base voltage VEBO 7 V Peak collector current *1 ICP 2 A Collector current IC 1 A PT 2 W Total power dissipation Ta= 25 *2 Junction temperature Tj 150 Storage temperature Tstg -55 to +150 *1 pw 10ms,Duty cycle 50% *2 when mounted on ceramic substrate of 7.5cm2X0.7mm Electrical Characteristics Ta = 25 Max Unit collecotr cutoff current Parameter Symbol ICBO VCB=600V,IE=0 Testconditons Min Typ 10 ìA Emitter cutoff current IEBO VEB=7V,IC=0 10 ìA DC Current Gain hFE VCE=5V,IC=100mA 30 55 VCE=5V,IC=100mA 5 7 120 Collector saturation voltage VCE(sat) IC=400mA,IB=80mA 0.35 1.0 V Base to saturation voltage VBE(sat) IC=400mA,IB=80mA 0.9 1.2 V VCE=5V,IE=-50mA 30 MHz cob VCB=10V,IE=0A,f=1MHz 14 pF Turn-on time ton IC=0.5A,RL=500Ù 0.1 0.5 ìs Storage time tstg IB1=-IB2=0.1A 4.0 5.0 ìs VCC=250V 0.2 0.5 ìs Gain Bandwidth Product fT Output capacitance Fall time tf hFE Classification Marking M L K hFE 30 to 60 40 to 80 60 to 120 www.kexin.com.cn 1