Transistors SMD Type NPN Epitaxial Planar Silicon Transistor 2SC4520 Features Adoption of FBET, MBIT process. Large current capacity. Low collector-to-emitter saturation voltage. Fast switching speed. Small-sized package. Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO 60 V Collector-emitter voltage VCEO 45 V Emitter-base voltage VEBO 5 V Collector current IC 1.5 A Collector current (pulse) ICP 3 A Collector dissipation PC 1.3 W Junction temperature Tj 150 Storage temperature Tstg -55 to +150 www.kexin.com.cn 1 Transistors SMD Type 2SC4520 Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Typ Max Unit Collector cutoff current ICBO VCB = 45V, IE=0 1 ìA Emitter cutoff current IEBO VEB = 3V, IC=0 1 ìA DC current gain hFE VCE = 2V , IC = 100mA fT VCE = 2V , IC = 100mA 300 MHz Cob VCB = 10V , f = 1.0MHz 13 pF Gain bandwidth product Output capacitance Collector-emitter saturation voltage 100 VCE(sat) IC = 800 mA , IB = 40mA VBE(sat) IC = 800 mV , IB = 40mA Base-emitter saturation voltage 400 0.25 0.7 0.9 1.3 V V Collector-base breakdown voltage V(BR)CBO IC = 10ìA , IE = 0 60 V Collector-emitter breakdown voltage V(BR)CEO IC = 1mA , RBE = 45 V Emitter-base breakdown voltage V(BR)EBO IE = 10ìA , IC = 0 5 V Turn-on time ton 50 100 ns Storage time tstg 150 270 ns tf 180 350 ns Fall time hFE Classification CK Marking 2 Min Rank R S T hFE 100 200 140 280 200 400 www.kexin.com.cn