KEXIN 2SD1624

Transistors
SMD Type
NPN Epitaxial Planar Silicon Transistor
2SD1624
Features
Low collector-to-emitter saturation voltage.
Fast switching speed.
Absolute Maximum Ratings Ta = 25
Symbol
Rating
Unit
Collector-base voltage
Parameter
VCBO
60
V
Collector-emitter voltage
VCEO
50
V
Emitter-base voltage
VEBO
6
V
Collector current
IC
3
A
Collector current (pulse)
ICP
6
A
PC
500
mW
PC *
1.5
W
Junction temperature
Tj
150
Storage temperature
Tstg
-55 to +150
Collector dissipation
* Mounted on ceramic board(250mm2X0.8mm)
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1
Transistors
SMD Type
2SD1624
Electrical Characteristics Ta = 25
Parameter
Symbol
Testconditons
Typ
Max
Unit
Collector cutoff current
ICBO
VCB = 40 V, IE=0
1
ìA
Emitter cutoff current
IEBO
VEB = 4 V, IC=0
1
ìA
DC current gain
hFE
VCE = 2 V , IC = 100 mA
fT
VCE = 10 V , IC = 50 mA
150
MHz
Cob
VCB = 10 V , f = 1.0MHz
25
pF
Gain bandwidth product
Output capacitance
100
VCE(sat) IC = 2 A , IB = 100 mA
Collector-emitter saturation voltage
Base-emitter saturation voltage
560
0.19
VBE(sat) IC = 2 A , IB = 100 mA
0.5
1.2
V
V
Collector-base breakdown voltage
V(BR)CBO IC = 10ìA , IE = 0
60
V
Collector-emitter breakdown voltage
V(BR)CEO IC = 1mA , RBE =
50
V
Emitter-base breakdown voltage
V(BR)EBO IE = 10ìA , IC = 0
6
V
Turn-on timie
ton
70
ns
Storage time
tstg
650
ns
Turn-off time
tf
35
ns
hFE Classification
DG
Marking
2
Min
Rank
R
S
T
U
hFE
100 200
140 280
200 400
280 560
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