Transistors SMD Type NPN Epitaxial Planar Silicon Transistor 2SD1624 Features Low collector-to-emitter saturation voltage. Fast switching speed. Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Collector-base voltage Parameter VCBO 60 V Collector-emitter voltage VCEO 50 V Emitter-base voltage VEBO 6 V Collector current IC 3 A Collector current (pulse) ICP 6 A PC 500 mW PC * 1.5 W Junction temperature Tj 150 Storage temperature Tstg -55 to +150 Collector dissipation * Mounted on ceramic board(250mm2X0.8mm) www.kexin.com.cn 1 Transistors SMD Type 2SD1624 Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Typ Max Unit Collector cutoff current ICBO VCB = 40 V, IE=0 1 ìA Emitter cutoff current IEBO VEB = 4 V, IC=0 1 ìA DC current gain hFE VCE = 2 V , IC = 100 mA fT VCE = 10 V , IC = 50 mA 150 MHz Cob VCB = 10 V , f = 1.0MHz 25 pF Gain bandwidth product Output capacitance 100 VCE(sat) IC = 2 A , IB = 100 mA Collector-emitter saturation voltage Base-emitter saturation voltage 560 0.19 VBE(sat) IC = 2 A , IB = 100 mA 0.5 1.2 V V Collector-base breakdown voltage V(BR)CBO IC = 10ìA , IE = 0 60 V Collector-emitter breakdown voltage V(BR)CEO IC = 1mA , RBE = 50 V Emitter-base breakdown voltage V(BR)EBO IE = 10ìA , IC = 0 6 V Turn-on timie ton 70 ns Storage time tstg 650 ns Turn-off time tf 35 ns hFE Classification DG Marking 2 Min Rank R S T U hFE 100 200 140 280 200 400 280 560 www.kexin.com.cn