Transistors SMD Type PNP Epitaxial Planar Silicon Transistors 2SB1121 Features Adoption of FBET, MBIT processes. Low collector-to-emitter saturation voltage. Large current capacity and wide ASO. Fast switching speed. Very small size making it easy to provide highdensity, small-sized hybrid IC’ s. Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO -30 V Collector-emitter voltage VCEO -25 V Emitter-base voltage VEBO -6 V Collector current IC -2 A Collector current (pulse) ICP -5 A Collector dissipation PC 500 mW Jumction temperature Tj 150 Storage temperature Tstg -55 to +150 www.kexin.com.cn 1 Transistors SMD Type 2SB1121 Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Typ Max Unit Collector cutoff current ICBO VCB = -20V , IE = 0 -0.1 ìA Emitter cutoff current IEBO VCB = -4V , IE = 0 -0.1 ìA DC current Gain hFE VCE = -2V , IC = -100mA fT VCE = -10V , IC = -50mA Gain bandwidth product 100 VBE(sat) IC = -1.5A , IB = -75mA Base-emitter saturation voltage 560 150 VCE(sat) IC = -1.5A , IB = -75mA Collector-emitter saturation voltage MHz -0.35 -0.6 -0.85 -1.2 V V Collector-base breakdown voltage V(BR)CBO IC = -10ìA , IE = 0 -30 V Collector-emitter breakdown voltage V(BR)CEO IC = -1mA , RBE = -25 V Emitter-base breakdown voltage V(BR)EBO IE = -10ìA , IC = 0 -6 pF ton 60 ns tstg 350 ns tf 25 ns Cob Turn-on time Storage time VCB = -10V , f = 1MHz hFE Classification BC Marking Rank hFE E 100 F 200 www.kexin.com.cn 160 G 320 V 32 Output capacitance Fall time 2 Min 280 560