Transistors IC SMD Type PNP Epitaxial Planar Silicon 2SA1730 Features Adoption of FBET , MBIT processes. Large current capacity. Low collector-to-emitter saturation voltage. Fast switching speed. Small-sized package. Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO -50 V Collector-emitter voltage VCEO -40 V Emitter-base voltage VEBO -5 V Collector current IC -3 A Collector current (pulse) ICP -6 A Collector dissipation * PC 1.5 W Jumction temperature Tj 150 Storage temperature Tstg -55 to +150 * Mounted on ceramic board (250mm2 X 0.8mm). www.kexin.com.cn 1 Transistors IC SMD Type 2SA1730 Electrical Characteristics Ta = 25 Max Unit Collector cutoff current Parameter Symbol IcBO VCB = -40V , IE = 0 -1 ìA Emitter cutoff current IEBO VEB = -3V , IC = 0 -1 ìA DC current Gain hFE VCE = -2V , IC = -500mA fT VCE = -2V , IC = -500mA 300 MHz Cob VCB = -10V , f = 1MHz 35 pF Collector-to-emitter saturation voltage VCE(sat) IC = -1.5A , IB =-75mA -0.3 -0.8 V Base-to-emitter saturation voltage VBE(sat) IC = -1.5A , IB =-75mA -0.95 -1.3 V Gain bandwidth product Common base output capacitance Testconditons Typ 70 280 Collector-to-base breakdown voltage V(BR)CBO IC = -10ìA , IE = 0 -50 V Collector-to-emitter breakdown voltage V(BR)CEO IC = -1mA , RBE = -40 V Emitter-to-base breakdown voltage V(BR)EBO IE = -10ìA , IC = 0 -5 V Turn-on time ton 50 100 ns Storage time tstg 120 220 ns Turn-off time toff 150 300 ns hFE Classification AH Marking 2 Min Rank Q R S hFE 70 140 100 200 140 280 www.kexin.com.cn