KEXIN 2SA1898

Transistors
IC
SMD Type
PNP Epitaxial Planar Silicon
2SA1898
Features
Adoption of FBET and MBIT processes.
Large current capacity.
Low collector-to-emitter saturation voltage.
Fast switching speed.
Absolute Maximum Ratings Ta = 25
Symbol
Rating
Unit
Collector-base voltage
Parameter
VCBO
-15
V
Collector-emitter voltage
VCEO
-15
V
Emitter-base voltage
VEBO
-5
V
Collector current
IC
-3
A
Collector current (pulse)
ICP
-5
A
Base current
IB
-600
mA
Collector dissipation
PC
1.3
W
Jumction temperature
Tj
150
Storage temperature
Tstg
-55 to +150
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1
Transistors
IC
SMD Type
2SA1898
Electrical Characteristics Ta = 25
Parameter
Symbol
Min
Typ
Max
Unit
Collector cutoff current
IcBO
VCB = -12V , IE = 0
-1
nA
Emitter cutoff current
IEBO
VEB = -3V , IC = 0
-1
nA
DC current Gain
hFE
VCE = -2V , IC = -0.5A
fT
VCE = -2V , IC = -0.3A
300
MHz
Cob
VCB = -10V , f = 1MHz
28
pF
Gain bandwidth product
Common base output capacitance
100
VCE(sat) IC = -1.5A , IB =-75mA
Collector-to-emitter saturation voltage
VBE(sat) IC = -1.5A , IB =-75mA
Base-to-emitter saturation voltage
280
-0.25
-0.5
-0.95
-1.2
mV
V
Collector-to-base breakdown voltage
V(BR)CBO IC = -10ìA , IE = 0
-15
V
Collector-to-emitter breakdown voltage
V(BR)CEO IC = -1mA , RBE =
-15
V
Emitter-to-base breakdown voltage
V(BR)EBO IE = -10ìA , IC = 0
-5
V
Turn-on time
ton
30
60
ns
Storage time
tstg
100
200
ns
Turn-off time
toff
120
220
ns
hFE Classification
AN
Marking
2
Testconditons
Rank
R
S
hFE
100 200
140 280
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