Transistors IC SMD Type PNP Epitaxial Planar Silicon 2SA1898 Features Adoption of FBET and MBIT processes. Large current capacity. Low collector-to-emitter saturation voltage. Fast switching speed. Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Collector-base voltage Parameter VCBO -15 V Collector-emitter voltage VCEO -15 V Emitter-base voltage VEBO -5 V Collector current IC -3 A Collector current (pulse) ICP -5 A Base current IB -600 mA Collector dissipation PC 1.3 W Jumction temperature Tj 150 Storage temperature Tstg -55 to +150 www.kexin.com.cn 1 Transistors IC SMD Type 2SA1898 Electrical Characteristics Ta = 25 Parameter Symbol Min Typ Max Unit Collector cutoff current IcBO VCB = -12V , IE = 0 -1 nA Emitter cutoff current IEBO VEB = -3V , IC = 0 -1 nA DC current Gain hFE VCE = -2V , IC = -0.5A fT VCE = -2V , IC = -0.3A 300 MHz Cob VCB = -10V , f = 1MHz 28 pF Gain bandwidth product Common base output capacitance 100 VCE(sat) IC = -1.5A , IB =-75mA Collector-to-emitter saturation voltage VBE(sat) IC = -1.5A , IB =-75mA Base-to-emitter saturation voltage 280 -0.25 -0.5 -0.95 -1.2 mV V Collector-to-base breakdown voltage V(BR)CBO IC = -10ìA , IE = 0 -15 V Collector-to-emitter breakdown voltage V(BR)CEO IC = -1mA , RBE = -15 V Emitter-to-base breakdown voltage V(BR)EBO IE = -10ìA , IC = 0 -5 V Turn-on time ton 30 60 ns Storage time tstg 100 200 ns Turn-off time toff 120 220 ns hFE Classification AN Marking 2 Testconditons Rank R S hFE 100 200 140 280 www.kexin.com.cn