MOSFET SMD Type N-Channel Power MOSFET XP161 SOT-89 ■ Features Unit: mm +0.1 -0.1 +0.1 -0.1 4.50 ● Low on-state resistance : Rds (on) = 0.055Ω ( Vgs = 4.5V ) 1.50 +0.1 1.80-0.1 +0.1 2.50-0.1 Rds (on) = 0.20Ω ( Vgs = 1.5V ) 1 2 3 +0.1 0.53-0.1 +0.1 0.48-0.1 +0.1 2.60-0.1 ● Driving Voltage : 1.5V +0.1 0.44-0.1 +0.1 0.80-0.1 ● Ultra high-speed switching ● Gate protect diode built-in +0.1 4.00-0.1 Rds (on) = 0.095Ω ( Vgs = 2.5V ) 1 Gate +0.1 0.40-0.1 +0.1 3.00-0.1 1. Source Base 1. 2 Drain Collector 2.2. Drain 3 Source Emiitter 3.3. Gate ■ Absolute Maximum Ratings Ta = 25℃ 1 Symbol Rating Unit Drain to source voltage Parameter VDSS 20 V Gate to source voltage VGSS ±8 V Drain current (DC) ID 4 A Drain current(pulse) IDP 16 A Power dissipation * PD 2 W Channel temperature Tch 150 ℃ Storage temperature Tstg -55 to +150 ℃ * When implemented on a ceramic PCB ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Testconditons Min Typ Max Unit Drain cut-off current IDSS VDS=20V,VGS=0 10 μA Gate leakage current IGSS VGS=±8V,VDS=0 ±10 μA 1.2 V Gate to source cutoff voltage VGS(off) VDS=10V,ID=1mA Forward transfer admittance │Yfs│ VDS=10V,ID=2A Drain to source on-state resistance 0.5 10 s VGS=4.5V,ID=2A 0.042 0.055 Ω RDS(on) VGS=2.5V,ID=2A 0.070 0.095 Ω VGS=1.5V,ID=0.5A Input capacitance Ciss Output capacitance Coss VDS=10V,VGS=0,f=1MHZ 0.12 0.20 Ω 390 pF 210 pF Reverse transfer capacitance Crss 90 pF Turn-on delay time td(on) 10 ns 15 ns Rise time Turn-off delay time Fall time tr ID=2A,VGS(on)=5V,VDD=10V td(off) 85 ns tf 45 ns www.kexin.com.cn 1