KEXIN XP161

MOSFET
SMD Type
N-Channel Power MOSFET
XP161
SOT-89
■ Features
Unit: mm
+0.1
-0.1
+0.1
-0.1
4.50
● Low on-state resistance : Rds (on) = 0.055Ω ( Vgs = 4.5V )
1.50
+0.1
1.80-0.1
+0.1
2.50-0.1
Rds (on) = 0.20Ω ( Vgs = 1.5V )
1
2
3
+0.1
0.53-0.1
+0.1
0.48-0.1
+0.1
2.60-0.1
● Driving Voltage : 1.5V
+0.1
0.44-0.1
+0.1
0.80-0.1
● Ultra high-speed switching
● Gate protect diode built-in
+0.1
4.00-0.1
Rds (on) = 0.095Ω ( Vgs = 2.5V )
1 Gate
+0.1
0.40-0.1
+0.1
3.00-0.1
1. Source
Base
1.
2 Drain
Collector
2.2. Drain
3 Source
Emiitter
3.3. Gate
■ Absolute Maximum Ratings Ta = 25℃
1
Symbol
Rating
Unit
Drain to source voltage
Parameter
VDSS
20
V
Gate to source voltage
VGSS
±8
V
Drain current (DC)
ID
4
A
Drain current(pulse)
IDP
16
A
Power dissipation *
PD
2
W
Channel temperature
Tch
150
℃
Storage temperature
Tstg
-55 to +150
℃
* When implemented on a ceramic PCB
■ Electrical Characteristics Ta = 25℃
Parameter
Symbol
Testconditons
Min
Typ
Max
Unit
Drain cut-off current
IDSS
VDS=20V,VGS=0
10
μA
Gate leakage current
IGSS
VGS=±8V,VDS=0
±10
μA
1.2
V
Gate to source cutoff voltage
VGS(off) VDS=10V,ID=1mA
Forward transfer admittance
│Yfs│ VDS=10V,ID=2A
Drain to source on-state resistance
0.5
10
s
VGS=4.5V,ID=2A
0.042 0.055
Ω
RDS(on) VGS=2.5V,ID=2A
0.070 0.095
Ω
VGS=1.5V,ID=0.5A
Input capacitance
Ciss
Output capacitance
Coss
VDS=10V,VGS=0,f=1MHZ
0.12
0.20
Ω
390
pF
210
pF
Reverse transfer capacitance
Crss
90
pF
Turn-on delay time
td(on)
10
ns
15
ns
Rise time
Turn-off delay time
Fall time
tr
ID=2A,VGS(on)=5V,VDD=10V
td(off)
85
ns
tf
45
ns
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