MOSFET SMD Type N-Channel PowerTrench MOSFET FDN5630 ■ Features SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 ● VDS (V) = 60V +0.1 1.3-0.1 +0.1 2.4-0.1 ● RDS(ON)＜120 mΩ (VGS = 6V) 0.4 3 ● RDS(ON)＜100 mΩ (VGS = 10V) 1 0.55 ● Optimized for use in high frequency DC/DC converters 2 ● Low gate charge +0.1 0.95-0.1 +0.1 1.9-0.1 +0.1 0.97-0.1 ● Very fast switching +0.05 0.1-0.01 0-0.1 +0.1 0.38-0.1 1.Base 1. Gate 2.Emitter 2. Source 3. Drain 3.collector ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Drain-Source Voltage VDS 60 V Gate-to-source voltage VGS ±20 V Drain curent -Continuous ID -Pulsed Power dissipation Maximum Junction-to-Ambient Junction and storage temperature range 1.7 A 10 PD 0.5 W RθJA 250 ℃/W TJ,TSTG -55 to +150 ℃ www.kexin.com.cn 1 MOSFET SMD Type N-Channel PowerTrench MOSFET FDN5630 ■ Electrical Characteristics Ta = 25℃ Parameter Drain-source Breakdown voltage Breakdown Voltage Temperature Coefficient Static drain-source on- resistance Symbol Testconditons Min V(BR)DSS ID= 250 μA, VGS = 0V 60 Typ Max △V(BR)DSS/△TJ ID = 250μA, Referenced to 25℃ ID= 1.7A, VGS = 10V 73 100 RDS(on) ID= 1.7A, VGS = 10V Ta = 125℃ 127 180 ID= 1.6A, VGS = 6V 83 120 2.4 3 V μA V 63 mV/℃ VGS(th) VDS = VGS, ID= 250 μA Forward Transconductance gfs VDS = 10 V, ID = 1.7 A Gate-source leakage current IDSS VDS = 48 V, VGS = 0V 1 VGS =-20V -100 VGS =20V 100 Gate threshold voltage Gate-source forward leadage IGSS Gate-source reverse leadage Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Turn-on delay time td(on) Rise time Turn-off delay time Fall time 1 6 7 VDS =20V ,VGS = 10 V , ID=1.7 A 10 nC 10 20 tr VDD= 30 V, ID= 1 A 6 15 td(off) VGS =10 V, RGEN= 6 Ω 15 28 5 15 tr Ciss VDS = 15 V, 400 Coss VGS = 0 V, 102 Reverse transfer capacitance Crss f= 1MHz 21 IS VSD nA 1.2 Output capacitance Diode forward voltage mΩ S 1.6 Input capacitance Maximum Continuous Drain-Source Diode Forward Current Unit VGS = 0 V , IS = 0.42 A 0.72 ns pF 0.42 A 1.2 V www.kexin.com.cn 2