KEXIN FDN5630

MOSFET
SMD Type
N-Channel PowerTrench MOSFET
FDN5630
■ Features
SOT-23
Unit: mm
+0.1
2.9-0.1
+0.1
0.4-0.1
● VDS (V) = 60V
+0.1
1.3-0.1
+0.1
2.4-0.1
● RDS(ON)<120 mΩ (VGS = 6V)
0.4
3
● RDS(ON)<100 mΩ (VGS = 10V)
1
0.55
● Optimized for use in high frequency DC/DC converters
2
● Low gate charge
+0.1
0.95-0.1
+0.1
1.9-0.1
+0.1
0.97-0.1
● Very fast switching
+0.05
0.1-0.01
0-0.1
+0.1
0.38-0.1
1.Base
1.
Gate
2.Emitter
2.
Source
3.
Drain
3.collector
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Symbol
Rating
Unit
Drain-Source Voltage
VDS
60
V
Gate-to-source voltage
VGS
±20
V
Drain curent -Continuous
ID
-Pulsed
Power dissipation
Maximum Junction-to-Ambient
Junction and storage temperature range
1.7
A
10
PD
0.5
W
RθJA
250
℃/W
TJ,TSTG
-55 to +150
℃
www.kexin.com.cn
1
MOSFET
SMD Type
N-Channel PowerTrench MOSFET
FDN5630
■ Electrical Characteristics Ta = 25℃
Parameter
Drain-source Breakdown voltage
Breakdown Voltage Temperature Coefficient
Static drain-source on- resistance
Symbol
Testconditons
Min
V(BR)DSS
ID= 250 μA, VGS = 0V
60
Typ
Max
△V(BR)DSS/△TJ
ID = 250μA, Referenced to 25℃
ID= 1.7A, VGS = 10V
73
100
RDS(on)
ID= 1.7A, VGS = 10V Ta = 125℃
127
180
ID= 1.6A, VGS = 6V
83
120
2.4
3
V
μA
V
63
mV/℃
VGS(th)
VDS = VGS, ID= 250 μA
Forward Transconductance
gfs
VDS = 10 V, ID = 1.7 A
Gate-source leakage current
IDSS
VDS = 48 V, VGS = 0V
1
VGS =-20V
-100
VGS =20V
100
Gate threshold voltage
Gate-source forward leadage
IGSS
Gate-source reverse leadage
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Turn-on delay time
td(on)
Rise time
Turn-off delay time
Fall time
1
6
7
VDS =20V ,VGS = 10 V ,
ID=1.7 A
10
nC
10
20
tr
VDD= 30 V, ID= 1 A
6
15
td(off)
VGS =10 V, RGEN= 6 Ω
15
28
5
15
tr
Ciss
VDS = 15 V,
400
Coss
VGS = 0 V,
102
Reverse transfer capacitance
Crss
f= 1MHz
21
IS
VSD
nA
1.2
Output capacitance
Diode forward voltage
mΩ
S
1.6
Input capacitance
Maximum Continuous Drain-Source Diode Forward Current
Unit
VGS = 0 V , IS = 0.42 A
0.72
ns
pF
0.42
A
1.2
V
www.kexin.com.cn
2