MOSFET SMD Type Product specification IRLML2402 SOT-23 ■ Features Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 ● Ultra Low On-Resistance +0.1 1.3-0.1 +0.1 2.4-0.1 ● N-Channel MOSFET 0.4 3 1 0.55 ● Fast switching. 2 +0.1 0.95-0.1 +0.1 1.9-0.1 +0.05 0.1-0.01 +0.1 0.97-0.1 D 1.Base 1.Gate 0-0.1 +0.1 0.38-0.1 G 2.Emitter 2.Soruce 3.Drain 3.collector S ■ Absolute Maximum Ratings Ta = 25℃ Symbol Rating Unit Drain-Source Voltage Parameter VDS 20 V Gate-to-source voltage VGS ±12 V Continuous drain curent, @ VGS=4.5V,TA=25℃ 1.2 A 0.95 A IDM 7.4 A ID Continuous drain curent, @ VGS=4.5V,TA=70℃ Pulsed drain current *1 Power dissipation @ TA=25℃ Thermal Resistance,Junction- to-Ambient Junction and storage temperature range PD 540 mW RθJA 230 ℃/W TJ,TSTG -55 to +150 ℃ *1.Reptitive rating:pulse width limited by max.junction temperature. *2.ISD≤ 0.93A,di/dt≤ 90A/μs,VDD ≤V(BR)DSS,TJ≤150℃ http://www.twtysemi.com [email protected] 4008-318-123 1 of 2 MOSFET SMD Type Product specification IRLML2402 ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Drain-source Breakdown voltage VDSS Gate-source leakage current IDSS Gate-source leadage IGSS Gate threshold voltage VGS(th) Static drain-source on- resistance RDS(on) Test conditons Min ID= 250 μA, VGS = 0V Typ 20 VDS = 16 V, VGS = 0V 1 VDS = 16 V, VGS = 0V, TJ=125℃ 25 ±100 VGS=±12V,VDS=0V VDS = VGS, ID= 250 μA 0.70 0.25 ID= 0.47A, VGS =2.7V 0.35 gfs VDS = 10 V, ID = 0.47 A Ciss VDS = 15V, Output capacitance Coss VGS = 0 V, 51 Reverse transfer capacitance Crss f= 1MHz 25 Total Gate Charge Qg Qgs Qgd Turn-on delay time td(on) Rise time Turn-off delay time Fall time 1.3 VDS =16V ,VGS = 4.5 V , ID= 0.93 A Continuous source current IS ISM Diode forward voltage 0.41 0.62 1.1 1.7 VSD nC 2.5 VDD= 10 V, MID= 0.93A, RD= 11Ω,RG= 6.2Ω tf Pulsed source current *1 3.9 9.5 trr pF 2.6 9.7 Qrr Ω S tr Reverse recovery charge nA 110 td(off) Reverse recovery time μA V ID= 0.93A, VGS = 4.5V Input capacitance Gate-Source Charge Unit V Forward Transconductance Gate-Drain Charge Max ns 4.8 TJ=25℃, IF = 0.93 A, di / dt = 100 A/μs *2 MOSFET symbo l showing the integral reverse p-n junction diode 25 38 ns 16 24 nC D 0.54 A G 7.4 S TJ=25℃,VGS = 0 V, IS = 0.93 A *2 1.2 V *1 Repetitive rating;pulse width limited by max.junction temperature. * 2 Pulse width ≤ 300μs, Duty cycle ≤ 2% http://www.twtysemi.com [email protected] 4008-318-123 2 of 2