IC IC SMD Type P-Channel 12-V (D-S) MOSFET KI5473DC Features TrenchFET Power MOSFETS Low rDS(on) and Excellent Power Handling In Compact Footprint Absolute Maximum Ratings Ta = 25 Parameter Symbol 5 secs Steady State Drain-Source Voltage VDS -12 Gate-Source Voltage VGS 8 Continuous Drain Current (TJ = 150 )* TA = 25 ID TA = 85 Pulsed Drain Current Continuous Source Current * Maximum Power Dissipation * IS TA = 25 PD TA = 85 Operating Junction and Storage Temperature Range -8.1 -5.9 -4.3 20 -2.1 -1.1 2.5 1.3 1.3 0.7 Symbol 5 sec RthJA Steady-State Maximum Junction-to-Foot (Drain) W 260 Parameter t A -55 to 150 TJ, Tstg Soldering Recommendations (Peak Temperature) Maximum Junction-to-Ambient* V -5.9 IDM Unit Steady-State RthJF Typ Max 40 50 80 95 15 20 Unit /W * Surface Mounted on 1" X 1' FR4 Board. www.kexin.com.cn 1 IC IC SMD Type KI5473DC Electrical Characteristics Ta = 25 Parameter Symbol Gate Threshold Voltage VGS(th) Gate-Body Leakage IGSS Zero Gate Voltage Drain Current IDSS On-State Drain Current* ID(on) Drain-Source On-State Resistance* rDS(on) Min VDS = 0 V, VGS = Typ -0.40 8V Max Unit -1.0 V 100 nA VDS = -9.6V, VGS = 0 V -1 A VDS = -9.6V, VGS = 0 V, TJ = 85 -5 A VDS -20 - 5 V, VGS = -4.5 V A VGS = -4.5 V, ID = -5.9A 0.022 0.027 VGS = -2.5 V, ID = -5.3A 0.028 0.0335 VGS = -1.8 V, ID = -2.2A 0.036 0.045 Forward Transconductance* gfs VDS = -5V, ID = -5.9A 20 Schottky Diode Forward Voltage* VSD IS = -1.1 A, VGS = 0 V -0.8 -1.2 V S 21 32 nC VDS = -6V, VGS = -4.5 V, ID = -5.9 A 3.1 nC nC Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd 6.0 Turn-On Delay Time td(on) 25 40 ns tr VDD = -6 V, RL = 6 50 75 ns ID = -1 A, VGEN = -4.5V, RG = 6 145 220 ns Rise Time Turn-Off Delay Time td(off) Fall Time tf 90 135 ns Source-Drain Reverse Recovery Time trr 70 105 ns * Pulse test; pulse width 2 Testconditons VDS = VGS, ID = -250 A www.kexin.com.cn 300 s, duty cycle 2%. IF = -1.1 A, di/dt = 100 A/ s