KEXIN KI5908DC

IC
IC
SMD Type
Dual N-Channel 20-V (D-S) MOSFET
KI5908DC
Features
TrenchFET Power MOSFETS
Ultra Low rDS(on) and Excellent Power
Handling In Compact Footprint
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
5secs
Steady State
Drain-Source Voltage
VDS
20
Gate-Source Voltage
VGS
8
Continuous Drain Current (TJ = 150
) TA = 25
ID
TA = 85
Pulsed Drain Current
Unit
V
5.9
4.4
4.2
3.1
1.8
0.9
2.1
1.1
1.1
0.6
A
IDM
Continuous Source Current (Diode Conduction)*
Maximum Power Dissipation *
TA = 25
IS
PD
TA = 85
Operating Junction and Storage Temperature Range
W
-55 to 150
TJ, Tstg
260
Soldering Recommendations
*Surface Mounted on 1" X 1" FR4 Board.
Thermal Resistance Ratings
Parameter
Maximum Junction-to-Ambient *
Symbol
t
5 sec
RthJA
Steady-State
Maximum Junction-to-Foot (Drain)
Steady-State
RthJF
Typical
Maximum
50
60
90
110
30
40
Unit
/W
* Surface Mounted on 1" X 1" FR4 Board.
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1
IC
IC
SMD Type
KI5908DC
Electrical Characteristics Ta = 25
Parameter
Symbol
Gate Threshold Voltage
VGS(th)
Gate-Body Leakage
IGSS
Zero Gate Voltage Drain Current
On-State Drain Current*
ID(on)
Drain Source On State Resistance*
rDS(on)
VDS = VGS, ID = 250
VDS = 0 V, VGS =
Min
Typ
0.4
A
8V
Max
Unit
1.0
V
100
VDS = 20V, VGS = 0 V
1
VDS = 20 V, VGS = 0 V, TJ = 85
5
VDS
20
5 V, VGS = 4.5 V
A
VGS = 4.5 V, ID = 4.4 A
0.032
0.04
VGS = 2.5V, ID = 4.1A
0.036
0.045
VGS = 2.5V, ID =1.9A
0.042
0.052
gfs
VDS = 10V, ID = 4.4 A
22
Schottky Diode Forward Voltage*
VSD
IS = 0.9 A, VGS = 0 V
0.8
1.2
Total Gate Charge
Qg
5
7.5
VDS = 10 V, VGS = 4.5V, ID = 4.4 A
S
Qgs
Qgd
1
Gate Resistance
Rg
1.9
td(on)
20
30
tr
36
55
30
45
12
20
45
90
Turn-Off Delay Time
td(off)
Fall Time
tf
Source-Drain Reverse Recovery Time
trr
* Pulse test :Pulse width
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300 s,duty cycle 2%
VDD=10V,RL=10
,ID=1A,VGEN=10V,RG=6
IF = 0.9 A, di/dt = 100 A/
s
V
nC
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
nA
A
Forward Transconductanceb
Rise Time
2
IDSS
Testconditons
0.85
ns
ns