IC IC SMD Type Dual N-Channel 20-V (D-S) MOSFET KI5908DC Features TrenchFET Power MOSFETS Ultra Low rDS(on) and Excellent Power Handling In Compact Footprint Absolute Maximum Ratings Ta = 25 Parameter Symbol 5secs Steady State Drain-Source Voltage VDS 20 Gate-Source Voltage VGS 8 Continuous Drain Current (TJ = 150 ) TA = 25 ID TA = 85 Pulsed Drain Current Unit V 5.9 4.4 4.2 3.1 1.8 0.9 2.1 1.1 1.1 0.6 A IDM Continuous Source Current (Diode Conduction)* Maximum Power Dissipation * TA = 25 IS PD TA = 85 Operating Junction and Storage Temperature Range W -55 to 150 TJ, Tstg 260 Soldering Recommendations *Surface Mounted on 1" X 1" FR4 Board. Thermal Resistance Ratings Parameter Maximum Junction-to-Ambient * Symbol t 5 sec RthJA Steady-State Maximum Junction-to-Foot (Drain) Steady-State RthJF Typical Maximum 50 60 90 110 30 40 Unit /W * Surface Mounted on 1" X 1" FR4 Board. www.kexin.com.cn 1 IC IC SMD Type KI5908DC Electrical Characteristics Ta = 25 Parameter Symbol Gate Threshold Voltage VGS(th) Gate-Body Leakage IGSS Zero Gate Voltage Drain Current On-State Drain Current* ID(on) Drain Source On State Resistance* rDS(on) VDS = VGS, ID = 250 VDS = 0 V, VGS = Min Typ 0.4 A 8V Max Unit 1.0 V 100 VDS = 20V, VGS = 0 V 1 VDS = 20 V, VGS = 0 V, TJ = 85 5 VDS 20 5 V, VGS = 4.5 V A VGS = 4.5 V, ID = 4.4 A 0.032 0.04 VGS = 2.5V, ID = 4.1A 0.036 0.045 VGS = 2.5V, ID =1.9A 0.042 0.052 gfs VDS = 10V, ID = 4.4 A 22 Schottky Diode Forward Voltage* VSD IS = 0.9 A, VGS = 0 V 0.8 1.2 Total Gate Charge Qg 5 7.5 VDS = 10 V, VGS = 4.5V, ID = 4.4 A S Qgs Qgd 1 Gate Resistance Rg 1.9 td(on) 20 30 tr 36 55 30 45 12 20 45 90 Turn-Off Delay Time td(off) Fall Time tf Source-Drain Reverse Recovery Time trr * Pulse test :Pulse width www.kexin.com.cn 300 s,duty cycle 2% VDD=10V,RL=10 ,ID=1A,VGEN=10V,RG=6 IF = 0.9 A, di/dt = 100 A/ s V nC Gate-Source Charge Gate-Drain Charge Turn-On Delay Time nA A Forward Transconductanceb Rise Time 2 IDSS Testconditons 0.85 ns ns