KEXIN KI4980DY

IC
IC
SMD Type
Dual N-Channel 80-V (D-S) MOSFET
KI4980DY
Features
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Drain-Source Voltage
VDS
80
Gate-Source Voltage
VGS
Continuous Drain Current (TJ = 150
)*
TA = 25
ID
TA = 70
Pulsed Drain Current
Continuous Source Current (Diode Conduction) *
TA = 25
Maximum Power Dissipation *
Maximum Junction-to-Ambient*
* Surface Mounted on FR4 Board, t
3.7
2.9
30
IS
1.7
2.0
A
A
W
1.3
TA = 70
Operating Junction and Storage Temperature Range
V
20
IDM
PD
Unit
TJ, Tstg
-55 to 150
RthJA
62.5
/W
10 sec.
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1
IC
IC
SMD Type
KI4980DY
Electrical Characteristics Ta = 25
Parameter
Symbol
Gate Threshold Voltage
VGS(th)
Gate-Body Leakage
IGSS
Zero Gate Voltage Drain Current
IDSS
On-State Drain Current *
ID(on)
Drain-Source On-State Resistance*
rDS(on)
VDS = 0 V, VGS =
1
0.075
VGS = 6.0 V, ID = 3.2 A
0.071
0.095
12
Total Gate Charge
Qg
Rg
Turn-On Delay Time
Turn-Off Delay Time
30
nC
4
nC
3.2
nC
5.1
20
ns
VDD = 40 V, RL = 40
10
20
ns
ID = 1 A, VGEN = 10 V, RG = 6 Ù
30
60
ns
10
20
ns
75
110
ns
tf
trr
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V
10
Fall Time
s, duty cycle
S
1.2
tr
td(off)
300
A
td(on)
Source-Drain Reverse Recovery Time
* Pulse test; pulse width
15
VDS = 40 V, VGS = 10V, ID = 3.7 A
nA
A
0.062
IS = 1.7 A, VGS = 0 V
Gate Resistance
20
VGS = 10 V, ID =3.7 A
VDS = 15 V, ID = 3.7 A
Qgs
100
VDS = 5 V, VGS = 10 V
Unit
V
20
gfs
Qgd
Max
VDS = 80 V, VGS = 0 V
VSD
Gate-Drain Charge
Typ
2
VDS = 80 V, VGS = 0 V, TJ = 55
Forward Transconductance*
Gate-Source Charge
Min
20 V
Schottky Diode Forward Voltage*
Rise Time
2
Testconditons
VDS = VGS, ID = 250 ìA
2 %.
IF = 1.7 A, di/dt = 100 A/
s