IC IC SMD Type N-Channel Qg, Fast Switching WFETTM KI4390DY Features Extremely Low Qgd WFET Technology for Switching Losses TrenchFETTM Power MOSFET Absolute Maximum Ratings Ta = 25 Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current (TJ = 150 ) TA = 25 ID Maximum Power Dissipation * 30 TA = 25 IS PD TA = 70 Operating Junction and Storage Temperature Range TJ, Tstg Unit V 20 12.5 8.5 6.8 20 IDM Continuous Source Current ( Diode Conduction)* Steady State 10 TA = 70 Pulsed Drain Current 10 secs 2.7 1.3 3 1.4 1.9 0.9 A W -55 to 150 *Surface Mounted on 1" X 1" FR4 Board. www.kexin.com.cn 1 IC IC SMD Type KI4390DY Thermal Resistance Ratings Parameter Maximum Junction-to-Ambient * Symbol t 10 sec RthJA Steady-State Maximum Junction-to-Foot (Drain) Steady-State RthJF Typical Maximum 32 42 68 90 15 20 Unit /W * Surface Mounted on 1" X 1" FR4 Board. Electrical Characteristics Ta = 25 Parameter Symbol Gate Threshold Voltage VGS(th) Gate-Body Leakage IGSS Zero Gate Voltage Drain Current IDSS On-State Drain Current* ID(on) Drain Source On State Resistance* rDS(on) VDS = VGS, ID = 250 VDS = 0 V, VGS = Min Typ 0.8 A 20 V Max Unit 2.8 V 100 VDS = 24 V, VGS = 0 V 1 VDS = 24 V, VGS = 0 V, TJ = 55 5 nA A VDS 30 5 V, VGS = 10 V A VGS = 10 V, ID = 12.5 A 0.0075 0.0095 VGS = 4.5 V, ID = 10.5 A 0.0105 0.0135 Forward Transconductanceb gfs VDS = 15 V, ID = 12.5 A 38 S Schottky Diode Forward Voltage* VSD IS = 2.7 A, VGS = 0 V 0.7 V VDS = 15 V, VGS = 4.5 V, ID = 12.5 A 3.5 10 15 Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd 2.1 Rg 0.8 td(on) 16 30 6 12 43 70 14 25 35 60 Gate Resistance Turn-On Delay Time Rise Time tr Turn-Off Delay Time td(off) Fall Time tf Source-Drain Reverse Recovery Time trr * Pulse test :Pulse width 2 Testconditons www.kexin.com.cn 300 s,duty cycle 2% VDD=15V,RL=15 ,ID=1A,VGEN=10V,RG=6 IF = 2.7 A, di/dt = 100 A/ s nC ns ns