KEXIN KI4464DY

IC
IC
SMD Type
N-Channel 200-V (D-S) MOSFET
KI4464DY
Features
PWM Optimized for (Lowest Qg and Low RG)
TrenchFET Power MOSFET
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
10 secs
Steady State
Drain-Source Voltage
VDS
200
Gate-Source Voltage
VGS
20
Continuous Drain Current (TJ = 150
) TA = 25
ID
TA = 70
Pulsed Drain Current
1.7
1.7
1.3
8
Single Avalanch Current
L = 0.1 mH
IAS
3
Single Avalanch Energy
L = 0.1 mH
EAS
0.45
Continuous Source Current ( Diode Conduction)*
Maximum Power Dissipation *
TA = 25
IS
PD
TA = 70
Operating Junction and Storage Temperature Range
TJ, Tstg
V
2.2
IDM
Unit
A
mJ
2.1
1.2
2.5
1.5
1.6
0.9
A
W
-55 to 150
*Surface Mounted on 1" X 1" FR4 Board.
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1
IC
IC
SMD Type
KI4464DY
Thermal Resistance Ratings
Parameter
Symbol
t
Maximum Junction-to-Ambient *
10 sec
Typical
Maximum
37
50
68
85
17
21
RthJA
Steady-State
Maximum Junction-to-Foot (Drain)
Steady-State
RthJF
Unit
/W
* Surface Mounted on 1" X 1" FR4 Board.
Electrical Characteristics Ta = 25
Parameter
Symbol
Gate Threshold Voltage
VGS(th)
Gate-Body Leakage
IGSS
Zero Gate Voltage Drain Current
On-State Drain Current*
ID(on)
Drain Source On State Resistance*
rDS(on)
VDS = VGS, ID = 250
VDS = 0 V, VGS =
Min
Typ
2.0
A
20 V
Max
V
100
nA
VDS = 160 V, VGS = 0 V
1
VDS = 160 V, VGS = 0 V, TJ = 55
5
A
VDS
8
5 V, VGS = 10 V
A
VGS = 10 V, ID = 2.2 A
0.195
0.240
VGS = 6.0 V, ID = 2.1 A
0.210
0.260
gfs
VDS = 15 V, ID = 2.2 A
8.0
Schottky Diode Forward Voltage*
VSD
IS = 2.1 A, VGS = 0 V
0.8
1.2
Total Gate Charge
Qg
12
18
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
3.8
Gate Resistance
Rg
2.5
td(on)
10
15
12
20
15
25
15
25
60
90
Rise Time
tr
Turn-Off Delay Time
td(off)
Fall Time
tf
Source-Drain Reverse Recovery Time
trr
* Pulse test :Pulse width
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300 s,duty cycle 2%
Unit
4
Forward Transconductanceb
Turn-On Delay Time
2
IDSS
Testconditons
VDS = 100 V, VGS = 10 V, ID = 2.2 A
VDD=100V,RL=100
,ID=1A,VGEN=10V,RG=6
IF = 2.1 A, di/dt = 100 A/
s
S
V
nC
2.5
ns
ns