IC IC SMD Type N-Channel 200-V (D-S) MOSFET KI4464DY Features PWM Optimized for (Lowest Qg and Low RG) TrenchFET Power MOSFET Absolute Maximum Ratings Ta = 25 Parameter Symbol 10 secs Steady State Drain-Source Voltage VDS 200 Gate-Source Voltage VGS 20 Continuous Drain Current (TJ = 150 ) TA = 25 ID TA = 70 Pulsed Drain Current 1.7 1.7 1.3 8 Single Avalanch Current L = 0.1 mH IAS 3 Single Avalanch Energy L = 0.1 mH EAS 0.45 Continuous Source Current ( Diode Conduction)* Maximum Power Dissipation * TA = 25 IS PD TA = 70 Operating Junction and Storage Temperature Range TJ, Tstg V 2.2 IDM Unit A mJ 2.1 1.2 2.5 1.5 1.6 0.9 A W -55 to 150 *Surface Mounted on 1" X 1" FR4 Board. www.kexin.com.cn 1 IC IC SMD Type KI4464DY Thermal Resistance Ratings Parameter Symbol t Maximum Junction-to-Ambient * 10 sec Typical Maximum 37 50 68 85 17 21 RthJA Steady-State Maximum Junction-to-Foot (Drain) Steady-State RthJF Unit /W * Surface Mounted on 1" X 1" FR4 Board. Electrical Characteristics Ta = 25 Parameter Symbol Gate Threshold Voltage VGS(th) Gate-Body Leakage IGSS Zero Gate Voltage Drain Current On-State Drain Current* ID(on) Drain Source On State Resistance* rDS(on) VDS = VGS, ID = 250 VDS = 0 V, VGS = Min Typ 2.0 A 20 V Max V 100 nA VDS = 160 V, VGS = 0 V 1 VDS = 160 V, VGS = 0 V, TJ = 55 5 A VDS 8 5 V, VGS = 10 V A VGS = 10 V, ID = 2.2 A 0.195 0.240 VGS = 6.0 V, ID = 2.1 A 0.210 0.260 gfs VDS = 15 V, ID = 2.2 A 8.0 Schottky Diode Forward Voltage* VSD IS = 2.1 A, VGS = 0 V 0.8 1.2 Total Gate Charge Qg 12 18 Gate-Source Charge Qgs Gate-Drain Charge Qgd 3.8 Gate Resistance Rg 2.5 td(on) 10 15 12 20 15 25 15 25 60 90 Rise Time tr Turn-Off Delay Time td(off) Fall Time tf Source-Drain Reverse Recovery Time trr * Pulse test :Pulse width www.kexin.com.cn 300 s,duty cycle 2% Unit 4 Forward Transconductanceb Turn-On Delay Time 2 IDSS Testconditons VDS = 100 V, VGS = 10 V, ID = 2.2 A VDD=100V,RL=100 ,ID=1A,VGEN=10V,RG=6 IF = 2.1 A, di/dt = 100 A/ s S V nC 2.5 ns ns