Light Emitting Diode(InGaN) KLP-32PG-X-X DIMENSIONS KLP-32G-x-x is a high bright InGaN green LED, and has the optimized optical characteristics. Features • Transparent epoxy Encapsulent • High Optical Output Zener(Option) Applications • Display • Indicator • Signage [ Ta=25°C ] Maximum Ratings Parameter Reverse Voltage (w/o Zener Option) Symbol VR Ratings 5 Unit V Reverse current ( w Zener Option) IR 50 mA Forward current IF 30 mA IFP Pulse forward current Power dissipation *1 Operating temperature Storage temperature Soldering Temperature *2 0.1 A PD 90 mW Topr. -30 ~ +85 °C Tstg. -40 ~ +105 °C Tsol. 260 °C *1. IFP Measured under duty £ 1/10 @ 1KHz *2. Soldering time £ 5 Sec Electro-Optical Characteristics Parameter Forward voltage [ Ta=25°C ] Symbol VF Po Iv λP Conditions IF = 20 mA IF = 20 mA Min 6.00 900 - Doninant Wave Length λd IF = 20 mA Spectral half bandwidth ∆λ IF = 20 mA Half angle ∆Θ IF = 20 mA Optical Output Power Peak emission wavelength IF = 20 mA 1/2 Typ 3.2 6.80 1100 520 Max - Unit V mW mcd nm 515 - 535 nm - 30 - nm - 110 - deg. Light Emitting Diode(InGaN) KLP-32PG-X-X Forward current vs. Ambient temperature Radiant Intensity vs. Forward current 1.5 25 Current Relative intensity Forward 20 15 10 0 0 20 40 60 80 a T e r u t a r e p m e T t n e i b m A Forward current IF(mA) (IF) 30 (℃) 100 1 0.5 0 5 0 10 15 20 25 Forward current IF Ambient temperature Ta 30 (IF) 35 Relative intensity vs. Wavelength Relative radiant intensity vs. Ambient temperature 1 Intensity [arb.] Relative radiant intensity PO 1.2 10 1 0.1 0.8 0.6 0.4 0.2 -20 0 20 40 60 80 0 400 100 (℃) 450 Forward current vs. Forward voltage 550 600 650 Radiant Pattern Angle(deg) (㎃) 30 25 20 15 + 60 + 40 +20 -20 -4 0 50 0 -80 -100 +80 10 0 -6 5 0 0 0 + 10 0 Forward current IF 500 Wave Length[nm] Ambient temperature Ta (V) 0.5 1.0 1.5 2.0 2.5 3.0 3.5 Forward voltage VF 100 50 50 Relative intensity(%) 2/2 100