This version: Jul. 1998 Previous version: Jan. 1998 E2Q0040-38-71 ¡ electronic components KGF1322 ¡ electronic components KGF1322 Power FET (Ceramic Package Type) GENERAL DESCRIPTION The KGF1322, housed in a ceramic package with integrated heat sink, is a discrete UHF-band power FET that features high efficiency, high output power, and low current operation. The KGF1322 specifications are guaranteed to a fixed matching circuit for 5.8 V and 850 MHz; external impedance-matching circuits are also required. Because of its high efficiency, high output power (more than 33 dBm), and low thermal resistance, the KGF1322 is ideal as a transmitter-final-stage amplifier for personal handy phones, such as digital cellular phones. FEATURES • High output power: 33 dBm (min.) • High efficiency: 60% (min.) • Low thermal resistance: 12°C/W (typ.) • Package: 3PHTP PACKAGE DIMENSIONS 3.5±0.05 4.5±0.15 5.9 MAX 4.7±0.15 0.5±0.05 1.7±0.2 0.63±0.15 3.1±0.15 0.125±0.05 1.1±0.15 2.3±0.05 Package material 3.3±0.15 Lead frame material Pin treatment 7.3±0.15 (Unit: mm) plate thickness Al203 Fe-Ni-Co alloy Ni/Au plating Au:1.0 mm or more 1/6 ¡ electronic components KGF1322 MARKING (1) (2) K1322 X X X X PRODUCT NAME LOT NUMBER MONTHLY LOT NUMBER (3) PRODUCTION MONTH (1-9,X,Y,Z) PRODUCTION YEAR (LOWEST DIGIT) (1) Gate (2) Source (3) Drain CIRCUIT Drain(3) Gate(1) Source(2) 2/6 ¡ electronic components KGF1322 ABSOLUTE MAXIMUM RATINGS Symbol Condition Unit Min. Max. Drain-source voltage Item VDS Ta = 25°C V — 10 Gate-source voltage VGS Ta = 25°C V –6.0 0.4 Drain current IDS Ta = 25°C A — 3 Total power dissipation Ptot Ta = Tc = 25°C W — 5 Channel temperature Tch — °C — 150 Storage temperature Tstg — °C –45 125 Condition Unit Min. ELECTRICAL CHARACTERISTICS (Ta = 25°C) Item Symbol Typ. Max. Gate-source leakage current IGSS VGS = –6 V mA — — 0.1 Gate-drain leakage current IGDO VGD = –16 V mA — — 0.5 IDS(off) VDS = 10 V, VGS = –6 V mA — — 1.5 IDSS VDS = 1.5 V, VGS = 0 V A 2.0 — — V –3.6 — –2.6 dBm 33.0 — — % 60 — — °C/W — 12 — Drain-source leakage current Drain current Gate-source cut-off voltage Output power VGS(off) PO VDS = 3 V, IDS = 4 mA (*1), PIN = 22 dBm Drain efficiency hD (*1), PIN = 22 dBm Thermal resistance Rth Channel to case *1 Condition: f = 850 MHz, VDS = 5.8 V, IDSQ = 240 mA 3/6 ¡ electronic components KGF1322 RF CHARACTERISTICS 4/6 ¡ electronic components KGF1322 Typical S Parameters VDS = 5.8 V, IDS = 240 mA Freq(MHz) MAG(S11) ANG(S11) MAG(S21) ANG(S21) MAG(S12) ANG(S12) MAG(S22) ANG(S22) 500.0 0.941 –151.20 3.945 95.29 0.032 24.38 0.697 –176.88 600.0 0.939 –157.04 3.325 90.96 0.033 23.33 0.699 –178.02 700.0 0.939 –161.53 2.878 86.91 0.034 22.90 0.702 –178.91 800.0 0.937 –165.06 2.542 83.63 0.035 22.86 0.702 –179.73 900.0 0.937 –167.96 2.273 80.53 0.035 23.33 0.704 179.81 1000.0 0.935 –170.53 2.052 77.50 0.036 23.14 0.702 178.93 1100.0 0.933 –172.69 1.869 75.04 0.037 23.63 0.703 178.55 1200.0 0.932 –174.68 1.731 72.26 0.038 23.81 0.703 177.88 1300.0 0.930 –176.46 1.602 70.02 0.038 24.52 0.703 177.60 1400.0 0.930 –178.20 1.501 67.31 0.039 24.26 0.702 176.77 1500.0 0.926 –179.81 1.406 64.99 0.040 24.96 0.702 176.48 1600.0 0.925 178.70 1.322 62.62 0.041 25.06 0.700 175.79 1700.0 0.920 177.39 1.256 60.34 0.042 25.40 0.701 175.46 1800.0 0.921 175.86 1.181 58.29 0.043 25.57 0.698 174.77 1900.0 0.915 174.46 1.132 55.93 0.044 25.34 0.698 174.66 2000.0 0.916 173.22 1.077 53.69 0.045 25.63 0.698 173.77 2100.0 0.913 171.70 1.036 51.72 0.046 25.70 0.696 173.63 2200.0 0.909 170.64 0.992 49.37 0.047 25.35 0.696 172.90 2300.0 0.907 169.24 0.953 47.61 0.048 25.72 0.693 172.71 2400.0 0.904 167.93 0.918 45.18 0.049 25.16 0.693 172.00 2500.0 0.903 166.79 0.887 43.47 0.051 25.17 0.686 171.74 2600.0 0.900 165.54 0.853 41.07 0.051 24.40 0.689 171.27 2700.0 0.897 164.25 0.830 39.39 0.053 23.73 0.685 171.07 2800.0 0.895 163.01 0.799 37.42 0.053 23.10 0.688 170.79 2900.0 0.891 161.64 0.781 35.16 0.054 21.96 0.686 170.71 3000.0 0.887 160.49 0.755 33.63 0.053 22.01 0.693 170.54 5/6 ¡ electronic components KGF1322 Typical S Parameters VDS = 5.8 V, IDS = 240 mA Frequency : 0.5 to 3.0 GHz Z0 = 50 W 6/6