OKI KGF1322

This version: Jul. 1998
Previous version: Jan. 1998
E2Q0040-38-71
¡ electronic components
KGF1322
¡ electronic components
KGF1322
Power FET (Ceramic Package Type)
GENERAL DESCRIPTION
The KGF1322, housed in a ceramic package with integrated heat sink, is a discrete UHF-band
power FET that features high efficiency, high output power, and low current operation. The
KGF1322 specifications are guaranteed to a fixed matching circuit for 5.8 V and 850 MHz;
external impedance-matching circuits are also required. Because of its high efficiency, high
output power (more than 33 dBm), and low thermal resistance, the KGF1322 is ideal as a
transmitter-final-stage amplifier for personal handy phones, such as digital cellular phones.
FEATURES
• High output power: 33 dBm (min.)
• High efficiency: 60% (min.)
• Low thermal resistance: 12°C/W (typ.)
• Package: 3PHTP
PACKAGE DIMENSIONS
3.5±0.05
4.5±0.15
5.9 MAX
4.7±0.15
0.5±0.05
1.7±0.2
0.63±0.15
3.1±0.15
0.125±0.05
1.1±0.15
2.3±0.05
Package material
3.3±0.15
Lead frame material
Pin treatment
7.3±0.15
(Unit: mm)
plate thickness
Al203
Fe-Ni-Co alloy
Ni/Au plating
Au:1.0 mm or more
1/6
¡ electronic components
KGF1322
MARKING
(1)
(2)
K1322
X X X X
PRODUCT NAME
LOT NUMBER
MONTHLY LOT NUMBER
(3)
PRODUCTION MONTH
(1-9,X,Y,Z)
PRODUCTION YEAR
(LOWEST DIGIT)
(1) Gate
(2) Source
(3) Drain
CIRCUIT
Drain(3)
Gate(1)
Source(2)
2/6
¡ electronic components
KGF1322
ABSOLUTE MAXIMUM RATINGS
Symbol
Condition
Unit
Min.
Max.
Drain-source voltage
Item
VDS
Ta = 25°C
V
—
10
Gate-source voltage
VGS
Ta = 25°C
V
–6.0
0.4
Drain current
IDS
Ta = 25°C
A
—
3
Total power dissipation
Ptot
Ta = Tc = 25°C
W
—
5
Channel temperature
Tch
—
°C
—
150
Storage temperature
Tstg
—
°C
–45
125
Condition
Unit
Min.
ELECTRICAL CHARACTERISTICS
(Ta = 25°C)
Item
Symbol
Typ.
Max.
Gate-source leakage current
IGSS
VGS = –6 V
mA
—
—
0.1
Gate-drain leakage current
IGDO
VGD = –16 V
mA
—
—
0.5
IDS(off)
VDS = 10 V, VGS = –6 V
mA
—
—
1.5
IDSS
VDS = 1.5 V, VGS = 0 V
A
2.0
—
—
V
–3.6
—
–2.6
dBm
33.0
—
—
%
60
—
—
°C/W
—
12
—
Drain-source leakage current
Drain current
Gate-source cut-off voltage
Output power
VGS(off)
PO
VDS = 3 V, IDS = 4 mA
(*1), PIN = 22 dBm
Drain efficiency
hD
(*1), PIN = 22 dBm
Thermal resistance
Rth
Channel to case
*1 Condition: f = 850 MHz, VDS = 5.8 V, IDSQ = 240 mA
3/6
¡ electronic components
KGF1322
RF CHARACTERISTICS
4/6
¡ electronic components
KGF1322
Typical S Parameters
VDS = 5.8 V, IDS = 240 mA
Freq(MHz) MAG(S11) ANG(S11) MAG(S21) ANG(S21) MAG(S12) ANG(S12) MAG(S22) ANG(S22)
500.0
0.941
–151.20
3.945
95.29
0.032
24.38
0.697
–176.88
600.0
0.939
–157.04
3.325
90.96
0.033
23.33
0.699
–178.02
700.0
0.939
–161.53
2.878
86.91
0.034
22.90
0.702
–178.91
800.0
0.937
–165.06
2.542
83.63
0.035
22.86
0.702
–179.73
900.0
0.937
–167.96
2.273
80.53
0.035
23.33
0.704
179.81
1000.0
0.935
–170.53
2.052
77.50
0.036
23.14
0.702
178.93
1100.0
0.933
–172.69
1.869
75.04
0.037
23.63
0.703
178.55
1200.0
0.932
–174.68
1.731
72.26
0.038
23.81
0.703
177.88
1300.0
0.930
–176.46
1.602
70.02
0.038
24.52
0.703
177.60
1400.0
0.930
–178.20
1.501
67.31
0.039
24.26
0.702
176.77
1500.0
0.926
–179.81
1.406
64.99
0.040
24.96
0.702
176.48
1600.0
0.925
178.70
1.322
62.62
0.041
25.06
0.700
175.79
1700.0
0.920
177.39
1.256
60.34
0.042
25.40
0.701
175.46
1800.0
0.921
175.86
1.181
58.29
0.043
25.57
0.698
174.77
1900.0
0.915
174.46
1.132
55.93
0.044
25.34
0.698
174.66
2000.0
0.916
173.22
1.077
53.69
0.045
25.63
0.698
173.77
2100.0
0.913
171.70
1.036
51.72
0.046
25.70
0.696
173.63
2200.0
0.909
170.64
0.992
49.37
0.047
25.35
0.696
172.90
2300.0
0.907
169.24
0.953
47.61
0.048
25.72
0.693
172.71
2400.0
0.904
167.93
0.918
45.18
0.049
25.16
0.693
172.00
2500.0
0.903
166.79
0.887
43.47
0.051
25.17
0.686
171.74
2600.0
0.900
165.54
0.853
41.07
0.051
24.40
0.689
171.27
2700.0
0.897
164.25
0.830
39.39
0.053
23.73
0.685
171.07
2800.0
0.895
163.01
0.799
37.42
0.053
23.10
0.688
170.79
2900.0
0.891
161.64
0.781
35.16
0.054
21.96
0.686
170.71
3000.0
0.887
160.49
0.755
33.63
0.053
22.01
0.693
170.54
5/6
¡ electronic components
KGF1322
Typical S Parameters
VDS = 5.8 V, IDS = 240 mA
Frequency : 0.5 to 3.0 GHz
Z0 = 50 W
6/6