This version: Jul. 1998 Previous version: Jan. 1998 E2Q0037-38-71 ¡ electronic components KGF1305T ¡ electronic components KGF1305T Power FET (Ceramic Package Type) GENERAL DESCRIPTION The KGF1305T, housed in a ceramic package with integrated heat sink, is a discrete UHF-band power FET that features high efficiency, high output power, and low current operation. The KGF1305T specifications are guaranteed to a fixed matching circuit for 5.4 V and 850 MHz; external impedance-matching circuits are also required. Because of its high efficiency, high output power (more than 31.5 dBm), and low thermal resistance, the KGF1305T is ideal as a transmitter-final-stage amplifier for personal handy phones, such as analog cellular phones. FEATURES • High output power: 31.5 dBm (min.) • High efficiency: 66% (min.) • Low thermal resistance: 12°C/W (typ.) • Package: 3PHTP PACKAGE DIMENSIONS 3.5±0.05 4.5±0.15 5.9 MAX 4.7±0.15 0.5±0.05 1.7±0.2 0.63±0.15 3.1±0.15 0.125±0.05 1.1±0.15 2.3±0.05 Package material 3.3±0.15 Lead frame material Pin treatment 7.3±0.15 (Unit: mm) plate thickness Al203 Fe-Ni-Co alloy Ni/Au plating Au:1.0 mm or more 1/6 ¡ electronic components KGF1305T MARKING (1) (2) K1305 X X X X PRODUCT NAME LOT NUMBER MONTHLY LOT NUMBER (3) PRODUCTION MONTH (1-9,X,Y,Z) PRODUCTION YEAR (LOWEST DIGIT) (1) Gate (2) Source (3) Drain CIRCUIT Drain(3) Gate(1) Source(2) 2/6 ¡ electronic components KGF1305T ABSOLUTE MAXIMUM RATINGS Symbol Condition Unit Min. Max. Drain-source voltage Item VDS Ta = 25°C V — 10 Gate-source voltage VGS Ta = 25°C V –6.0 0.4 Drain current IDS Ta = 25°C A — 2 Total power dissipation Ptot Ta = Tc = 25°C W — 3 Channel temperature Tch — °C — 150 Storage temperature Tstg — °C –45 125 ELECTRICAL CHARACTERISTICS Item Gate-source leakage current Gate-drain leakage current Drain-source leakage current Drain current Gate-source cut-off voltage Transconductance Symbol IGSS IGDO IDS(off) (Ta = 25°C) Condition VGS = –6 V Unit Min. Typ. Max. mA — — 0.3 VGD = –16 V mA — — 1 VDS = 10 V, VGS = –6 V mA — — 3 IDSS VDS = 1.5 V, VGS = 0 V A 1.3 — — VGS(off) VDS = 3 V, IDS = 3 mA V –4.0 — –2.5 gm VDS = 3 V, IDS = 400 mA mS 400 — — Output power PO (*1), PIN = 20 dBm dBm 31.5 31.8 — Drain efficiency hD (*1), PIN = 20 dBm % 66 70 — Thermal resistance Rth Channel to case °C/W — 12 — *1 Condition: f = 850 MHz, VDS = 5.4 V, IDSQ = 150 mA 3/6 ¡ electronic components KGF1305T RF CHARACTERISTICS 4/6 ¡ electronic components KGF1305T Typical S Parameters VDS = 5.4 V, IDS = 150 mA Freq(MHz) MAG(S11) ANG(S11) MAG(S21) ANG(S21) MAG(S12) ANG(S12) MAG(S22) ANG(S22) 500.0 0.904 –138.10 5.672 98.26 0.039 24.98 0.516 –166.92 600.0 0.898 –146.17 4.851 92.74 0.040 22.59 0.524 –169.30 700.0 0.898 –152.00 4.235 88.47 0.041 21.11 0.529 –170.80 800.0 0.892 –156.82 3.758 84.26 0.042 19.99 0.533 –172.27 900.0 0.893 –160.44 3.391 80.99 0.042 19.30 0.536 –173.15 1000.0 0.888 –163.81 3.060 77.53 0.043 18.66 0.538 –174.21 1100.0 0.888 –166.54 2.818 74.38 0.044 18.46 0.537 –174.79 1200.0 0.885 –169.05 2.590 71.44 0.044 18.11 0.542 –175.71 1300.0 0.884 –171.16 2.411 68.47 0.045 18.37 0.539 –176.29 1400.0 0.883 –173.32 2.252 65.86 0.046 17.92 0.546 –176.97 1500.0 0.878 –174.86 2.111 63.20 0.046 18.30 0.540 –177.67 1600.0 0.880 –177.08 1.989 60.74 0.047 17.80 0.545 –178.16 1700.0 0.873 –178.47 1.889 58.26 0.048 18.05 0.541 –178.96 1800.0 0.874 –179.87 1.785 55.72 0.048 18.18 0.547 –179.40 1900.0 0.871 178.63 1.701 53.82 0.049 17.95 0.541 179.67 2000.0 0.867 177.01 1.625 50.52 0.050 18.30 0.546 179.38 2100.0 0.866 175.77 1.542 49.03 0.051 18.37 0.541 178.08 2200.0 0.863 174.18 1.492 46.22 0.052 18.16 0.546 178.00 2300.0 0.856 172.90 1.418 44.00 0.053 18.38 0.542 176.66 2400.0 0.860 171.57 1.380 42.12 0.053 18.08 0.542 176.41 2500.0 0.847 170.24 1.322 38.98 0.055 18.28 0.543 175.31 2600.0 0.854 169.02 1.277 37.70 0.055 18.17 0.539 174.80 2700.0 0.841 167.89 1.234 35.03 0.057 18.12 0.544 173.75 2800.0 0.850 166.46 1.198 32.92 0.057 18.16 0.539 173.20 2900.0 0.838 165.72 1.158 31.37 0.059 17.98 0.543 171.95 3000.0 0.844 163.92 1.129 28.48 0.060 17.83 0.539 171.42 5/6 ¡ electronic components KGF1305T Typical S Parameters VDS = 5.4 V, IDS = 150 mA Frequency : 0.5 to 3.0 GHz Z0 = 50 W 6/6