Pr
E2E0045-38-96
el
im
GENERAL DESCRIPTION
The MSM64P164 is a one-time-programmable ROM-version product, which has one-time
PROM (OTP) as internal program memory. On the other hand, the MSM64164C is a mask ROMversion product, which has mask ROM as internal program memory.
Unlike the mask ROM-version MSM64164C, which has a P-well CMOS structure, the MSM64P164
has been fabricated with the N-well CMOS-structured EEPROM process technology. Therefore,
the MSM64P164 differs from the MSM64164C in the polarity of the power supply for LCD bias
generation and 5 V interface, and in the external circuit structure.
Unlike the mask ROM-version product, the MSM64P164 cannot be supplied in the form of a chip.
The MSM64P164 is an OTP-version product used to evaluate an application program.
The MSM64P164 has two operation modes, microcontroller operation mode and PROM mode.
The microcontroller operation mode is used to operate the MSM64P164 like a mask ROM-version
product and the PROM mode is used to program or read the PROM.
FEATURES
• Operating range
Operating frequencies
Operating voltage
:
:
:
32.768 kHz, 400 kHz
1.5 V/3.0 V selectable by mask option
Low supply current
0 to +65°C
Operating temperature
• Memory space
Internal program memory
Internal data memory
• RC oscillation type A/D converter
:
:
:
Counter A
Counter B
• Serial port
:
:
:
• LCD driver
(1) At 1/4 duty and 1/3 bias
(2) At 1/3 duty and 1/3 bias
(3) At 1/2 duty and 1/2 bias
• Buzzer driver
• Capture circuit
• Watchdog timer
• I/O port
Input-output port
Input port
Output port
:
:
:
:
:
:
4064 bytes
256 nibbles
2 channels
Time dividing 2-channel method
1/(104 ¥ 8) ¥ 1
1/214 ¥ 1
Synchronous 8-bit transfer
External clock/internal clock selectable
MSB first/LSB first selectable
34 outputs; duty ratio switchable by software
120 segments (max)
93 segments (max)
64 segments (max)
1 output (4 output modes selectable)
2 channels (256 Hz, 128 Hz, 64 Hz, 32 Hz)
:
:
:
3 ports ¥ 4 bits
1 port ¥ 4 bits
1 port ¥ 4 bits
1/37
y
4-Bit Microcontroller with Built-in RC Oscillation Type A/D Converter and LCD Driver
ar
This version:MSM64P164
Sep. 1998
Previous version: Sep. 1995
in
¡ Semiconductor
MSM64P164
¡ Semiconductor
¡ Semiconductor
MSM64P164
• Interrupt sources
External interrupt
: 2 sources
Internal interrupt
: 8 sources
• Package:
80-pin plastic QFP (QFP80-P-1420-0.80-BK) : (Product name : MSM64P164-¥¥¥GS-BK)
¥¥¥ indicates a code number.
2/37
HALT
TR0
PROM
(4064
bytes)
TR1
C
MIEF
A11 to A8
A7 to A0
A
(4)
(4)
B
H
L
X
RAM
(256
nibbles)
Y
PORT ADDRESS
(4)
PCH
PCM PCL
ALU
L0
L1
LCD
L33
VDD
P2.0
P2.1
P2
P3
P4
P4.3
BSR
DB7 to DB0
OSC2
OSC1
XT
XT
RESET
2CLK
TIMING
CONTROLLER
RSTG
TBC
5
TST1
TST2
TST
VSSL
VR
SP
I·R
DECODER
IR
INT
(8)
VDD
P0.0
P0.1
P0.2
P0.3
P0
ROMR
SIOP
(8)
INT
INT
VDD
P1.0
P1.1
P1.2
P1.3
P1
INT
PORT ADDRESS
DB7 to DB0
ADC
INT
VDD
VSS
3/37
MSM64P164
BD
IN0
CS0
RS0
CRT0
RT0
IN1
CS1
RS1
RT1
CAPR
INT
BD
INTC
WDT
¡ Semiconductor
TR2
Program
data/address
BLOCK DIAGRAM
VPP
VDD1
VDD2
VDD3
C1
C2
BIAS
¡ Semiconductor
MSM64P164
65 OSC2
66 OSC1
67 VDD
68 XT
69 XT
70 RESET
71 TST1
72 TST2
73 P1.0
74 P1.1
75 P1.2
76 P1.3
78 P0.1
77 P0.0
2
64 L33/P6.3
63 L32/P6.2
3
62 L31/P6.1
4
61 L30/P6.0
5
60 L29/P5.3
6
59 L28/P5.2
7
58 L27/P5.1
8
57 L26/P5.0
1
9
56 L25
10
55 L24
11
12
54 L23
53 L22
13
52 L21/A11
14
51 L20/A10
15
16
50 L19/A9
49 L18/A8
17
48 L17/A7
18
47 C2
19
46 C1
20
45 VDD3
44 VDD2
21
23
43 VDD
42 VDD1
24
41 RT1
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
P3.3 25
22
P4.0
P4.1
P4.2
P4.3
BD
VPP
VSS
RT0
CRT0
RS0
CS0
IN0
IN1
CS1
RS1
L0/D0
L1/D1
L2/D2
L3/D3
L4/D4
L5/D5
L6/D6
L7/D7
L8/CE
L9/OE
L10/A0
L11/A1
L12/A2
L13/A3
L14/A4
L15/A5
L16/A6
P2.0
P2.1
P2.2
P2.3
P3.0
P3.1
P3.2
79 P0.2
80 P0.3
PIN CONFIGURATION (TOP VIEW)
80-Pin Plastic QFP
Note: Because pin 32 and pin 67 are internally connected with each other, VDD can be supplied
from either pin 32 or pin 67.
4/37
¡ Semiconductor
MSM64P164
PIN DESCRIPTIONS
Basic Functions
Function
Power
Supply
Oscillation
Ports
Description
Type
32
Symbol
VSS
42
VDD1
—
44
VDD2
—
45
VDD3
—
at 3.0 V spec.
Bias output for driving LCD (+4.5 V).
43
VDD
—
Positive power supply for I/O port interface
Pin
—
0 V power supply
Bias output for driving LCD (+1.5 V), or positive power supply
at 1.5 V spec.
Bias output for driving LCD (+3.0 V), or positive power supply
31
VPP
—
Positive power supply for writing to PROM (+12.5 V)
46,47
C1, C2
—
Pins for connecting a capacitor for generating LCD driving bias.
69
68
XT
I
O
32.768 kHz crystal connection pins
66
XT
OSC1
I
65
OSC2
O
73 to 76
P1.0 to P1.3
77 to 80
P0.0 to P0.3
O
I
Input port
18 to 29
P2.0 to P4.3
I/O
Input-output ports
30
BD
O
Output pin for the buzzer driver
33
RT0
O
External 400 kHz oscillation resistor (ROS) connection pins
Output port (P1.0 : high current output)
Resistance temperature sensor
connection pin
Resistance/capacitance temperature
RC oscillation pins
for A/D converter
34
CRT0
O
35
RS0
O
Reference resistor connection pin
A/D
36
CS0
O
Reference capacitor connection pin
Converter
37
IN0
I
Input pin for RC oscillator circuit
41
RT1
O
40
RS1
O
Reference resistor connection pin
39
CS1
O
Reference capacitor connection pin
38
IN1
I
Input pin for RC oscillator circuit
System reset input pin.
Setting this pin to "L" level puts this device into a reset state.
Them, setting this pin to "H" level starts executing an instruction
from address 000H.
This pin is internally pulled up to VDD.
Reset
Test
LCD
Drivers
sensor connection pin
Resistance temperature sensor
connection pin
(channel 0)
(CROSC0)
RC oscillation pins
for A/D converter
(channel 1)
(CROSC1)
70
RESET
I
71
TST1
TST2
I
1 to 17,
48 to 56
L0 to L25
O
LCD driver pins
57 to 64
L26/P5.0 to
L33/P6.3
O
LCD driver pins, or output ports by mask option
72
I
Input pins for testing.
5/37
¡ Semiconductor
MSM64P164
Secondary Functions
Function
Pin
Symbol
77
P0.0
78
P0.1
79
P0.2
80
P0.3
18
P2.0
Secondary functions of P2.0 to P2.3, P3.0 to P3.3, and P4.0 to P4.3:
19
P2.1
Level-triggered external interrupt input pins.
20
P2.2
The change of input signal level causes an interrupt to occur.
21
P2.3
22
P3.0
23
P3.1
24
P3.2
25
P3.3
26
P4.0
27
P4.1
28
P4.2
29
P4.3
Capture
77
P0.0
Trigger
78
P0.1
25
P3.3
I
26
P4.0
O
27
P4.1
O
28
P4.2
I/O
External
Interrupt
Type
Description
Secondary functions of P0.0 to P0.3:
I
Level-triggered external interrupt input pins.
The change of input signal level causes an interrupt to occur.
I
I
Serial Port
Secondary functions of P0.0 and P0.1:
Capture circuit trigger input pins.
Secondary functions of P3.3:
This pin is assigned the data input of a serial port (SIN).
Secondary functions of P4.0:
This pin is assigned the data output of a serial port (SOUT).
Secondary functions of P4.1:
This pin is assigned the ready output of a serial port (SPR).
Secondary functions of P4.2:
This pin is assigned the clock I/O of a serial port (SCLK).
Secondary functions of P4.3:
RC Oscillation
Monitor
29
P4.3
O
This pin is a monitor output (MON) of an RC oscillation clock
(OSCCLK) for an A/D converter and a 400 kHz RC oscillation
clock for a system clock.
6/37
¡ Semiconductor
MSM64P164
PROM-Related Pins
Function
Description
Pin
Symbol
Type
32, 67
VSS
O
0 V power supply.
42
VDD1*
—
Positive power supply pin (+5 V supplied).
44
VDD2*
—
Positive power supply pin (+5 V supplied).
31
VPP
—
PROM write power supply (+12.5 V supplied).
70
RESET
I
71
TST1
72
TST2
1
L0/D0
2
L1/D1
3
L2/D2
4
L3/D3
5
L4/D4
6
L5/D5
7
L6/D6
Program-
8
L7/D7
ming
9
*
PROM write setting pins:
PROM mode is set by a "L" level input.
I/O
Pins for writing and reading program data.
L8/CE
I/O
PROM chip enable pin.
10
L9/OE
I/O
PROM output enable signal.
11
L10/A0
I
Program address input pins.
12
L11/A1
13
L12/A2
14
L13/A3
15
L14/A4
16
L15/A5
17
L16/A6
48
L17/A7
49
L18/A8
I
Apply a "H" level to this pin.
50
L19/A9
51
L20/A10
52
L21/A11
53
L22
When in PROM mode, supply a 5 V power to both VDD1 and VDD2.
7/37
¡ Semiconductor
MSM64P164
ABSOLUTE MAXIMUM RATINGS (1.5 V Spec.)
Parameter
(VSS = 0 V)
Unit
Symbol
Condition
Rating
Power Supply Voltage 1
VDD1
Ta = 25°C
–0.3 to +2.0
V
Power Supply Voltage 2
VDD2
Power Supply Voltage 3
VDD3
Ta = 25°C
Ta = 25°C
–0.3 to +4.0
–0.3 to +5.5
V
V
Power Supply Voltage 4
VDD
Ta = 25°C
–0.3 to +5.5
V
Input Voltage 1
VIN1
VDD1 input, Ta = 25°C
–0.3 to VDD1 + 0.3
V
VIN2
VDD input, Ta = 25°C
–0.3 to VDD + 0.3
V
Output Voltage 1
Input Voltage 2
VOUT1
Output Voltage 2
VOUT2
VDD1 output, Ta = 25°C
VDD2 output Ta = 25°C
–0.3 to VDD1 + 0.3
–0.3 to VDD2 + 0.3
V
V
Output Voltage 3
VOUT3
VDD3 output, Ta = 25°C
–0.3 to VDD3 + 0.3
V
Output Voltage 4
VOUT4
VDD output, Ta = 25°C
–0.3 to VDD + 0.3
V
Storage Temperature
TSTG
—
–55 to +150
°C
RECOMMENDED OPERATING CONDITIONS (1.5 V Spec.)
(VSS = 0 V)
Parameter
Operating Temperature
Operating Voltage
External 400 kHz RC Oscillator
Resistance
Crystal Oscillation Frequency
Symbol
Condition
Range
Unit
Top
—
0 to +65
°C
VDD1
—
1.4 to 1.7
V
VDD
—
VDD1 to 5.25
V
ROS
—
250 to 500
kW
fXT
—
30 to 35
kHz
8/37
¡ Semiconductor
MSM64P164
ELECTRICAL CHARACTERISTICS (1.5 V Spec.)
DC Characteristics
(VSS = 0 V, VDD1 = VDD = 1.5 V, Ta = 0 to +65°C unless otherwise specified)
Parameter
Condition
Symbol
VDD2 Voltage
VDD2
Ca, Cb, C12 = 0.1 mF
VDD3 Voltage
VDD3
Ca, Cb, C12 = 0.1 mF
Crystal Oscillation
Start Voltage
Crystal Oscillation
Hold Voltage
Crystal Oscillation
Stop Detection Time
Internal Crystal
Oscillator Capacitance
External Crystal
Oscillator Capacitance
Internal Crystal
Oscillator Capacitance
Internal 400k RC
Oscillator Capacitance
400k RC Oscillation
Frequency
POR Generation
Voltage
POR Non-generation
Voltage
VSTA
+100%
–50%
+100%
–50%
Oscillation start time:
within 5 seconds
Min.
Typ.
Max.
Unit
2.8
3.0
3.2
V
4.3
4.5
4.7
V
1.47
—
—
V
VHOLD
—
1.40
—
—
V
TSTOP
—
0.1
—
1000
ms
CG
—
10
15
20
pF
10
—
30
pF
CGEX
When external CG used
CD
—
10
15
20
pF
COS
—
8
12
16
pF
80
220
350
kHz
0
—
0.4
V
1.4
—
1.5
V
fOSC
VPOR1
VPOR2
External resistor ROS = 300 kW
VDD1 = 1.40 to 1.7 V
When VDD1 is between VPOR1
and 1.5 V
No POR when VDD1 is between
VPOR2 and 1.5 V
Measuring
Circuit
1
Notes: 1. "POR" denotes Power On Reset.
2. "TSTOP" indicates that if the crystal oscillator stops over the value of TSTOP, the
system reset occurs.
9/37
¡ Semiconductor
MSM64P164
DC Characteristics (continued)
(VSS = 0 V, VDD1 = VDD = 1.5 V, Ta = 0 to +65°C unless otherwise specified)
Parameter
Symbol
Supply Current 1
IDD1
Supply Current 2
IDD2
Condition
Min.
Typ.
Max.
Unit
—
2.0
5.0
mA
—
50
80
mA
—
90
180
mA
—
60
100
mA
RT0 = 10 kW
—
150
230
mA
RT0 = 2 kW
—
600
900
mA
CPU in halt state
(400k RC oscillation halt)
CPU in operating state
(400k RC oscillation halt)
Measuring
Circuit
CPU in operating state
Supply Current 3
IDD3
(400k RC oscillation in operation)
ROS = 300 kW
Serial transfer,
Supply Current 4
IDD4
1
fSCK = 300 kHz,
CPU in operating state
(400k RC oscillation halt)
CPU in halt state
(400k RC oscillation
Supply Current 5
IDD5
halt), RC oscillator for
A/D converter is in
operating state
10/37
¡ Semiconductor
MSM64P164
DC Characteristics (continued)
(VSS = 0 V, VDD1 = VDD = 1.5 V, VDD2 = 3.0 V, VDD3 = 4.5 V,
Ta = 0 to +65°C unless otherwise specified)
Parameter
(Pin Name)
Condition
Symbol
Min.
Typ.
Max.
Unit
IOH1
VOH1 = VDD – 0.5 V
–2.1
–0.7
–0.2
mA
IOL1
VOL1 = 0.5 V
1.0
3.0
9.0
mA
IOL1S
VDD = 5 V, VOL1 = 0.5 V
4.0
12
36
mA
IOH2
VOH2 = VDD – 0.5 V
–2.1
–0.7
–0.2
mA
IOL2
VOL2 = 0.5 V
0.2
0.7
2.1
mA
IOL2S
VDD = 5 V, VOL2 = 0.5 V
1.0
3.0
9.0
mA
IOH3
VOH3 = VDD1 – 0.7 V
–1.8
–0.6
–0.2
mA
IOL3
VOL3 = 0.7 V
0.2
0.6
1.8
mA
Output Current 4
IOH4
(RT0, RT1, RS0, RS1,
IOL4
CRT0, CS0, CS1)
Output Current 5
IOH5
(When L26 to L33 are
IOL5
configured as output
I
ports)
OL5S
VOH4 = VDD1 – 0.1 V
–1.1
–0.6
–0.3
mA
Output Current 6
(OSC2)
Output Current 1
(P1.0)
Output Current 2
(P1.1 to P1.3)
(P2.0 to P2.3)
(P3.0 to P3.3)
(P4.0 to P4.3)
Output Current 3
(BD)
Output Current 7
(L0 to L33)
Output Leakage Current
(P1.0 to P1.3)
(P2.0 to P2.3)
(P3.0 to P3.3)
(P4.0 to P4.3)
(RT0, RT1, RS0, RS1,
CRT0, CS0, CS1)
VOL4 = 0.1 V
0.3
0.6
1.1
mA
VOH5 = VDD – 0.5 V
–1.5
–0.5
–0.1
mA
VOL5 = 0.5 V
0.1
0.5
1.5
mA
VDD = 5 V, VOL5S = 0.5 V
0.2
0.7
2.0
mA
IOH6
VOH6 = VDD1 – 0.5 V
–2.1
–0.7
–0.2
mA
IOL6
VOL6 = 0.5 V
0.2
0.7
2.1
mA
IOH7
VOH7 = VDD3 – 0.2 V (VDD3 level)
—
—
–4.0
mA
IOMH7
VOMH7 = VDD2 + 0.2 V (VDD2 level)
4.0
—
—
mA
IOMH7S
VOMH7S = VDD2 – 0.2 V (VDD2 level)
—
—
–4.0
mA
IOML7
VOML7 = VDD1 + 0.2 V (VDD1 level)
4.0
—
—
mA
IOML7S
VOML7S = VDD1 – 0.2 V (VDD1 level)
—
—
–4.0
mA
IOL7
VOL7 = VSS + 0.2 V
4.0
—
—
mA
IOOH
VOH = VDD1
—
—
0.3
mA
IOOL
VOL = VSS
–0.3
—
—
mA
(VSS level)
Measuring
Circuit
2
11/37
¡ Semiconductor
MSM64P164
DC Characteristics (continued)
(VSS = 0 V, VDD1 = VDD = 1.5 V, VDD2 = 3.0 V, VDD3 = 4.5 V,
Ta = 0 to +65°C unless otherwise specified)
Parameter
(Pin Name)
Input Current 1
(P0.0 to P0.3)
(P2.0 to P2.3)
(P3.0 to P3.3)
(P4.0 to P4.3)
Input Current 2
(IN0, IN1)
Input Current 3
(OSC1)
Input Current 4
(RESET, TST1, TST2)
Input Voltage 1
(P0.0 to P0.3)
(P2.0 to P2.3)
(P3.0 to P3.3)
(P4.0 to P4.3)
Symbol
Condition
Min.
Typ.
Max.
Unit
IIH1
VIH1 = VDD (when pulled down)
5.0
18
60
mA
IIL1
VIL1 = VSS (when pulled up)
–60
–18
–5.0
mA
IIH1S
VIH1 = VDD = 5 V (when pulled down)
70
250
660
mA
IIL1S
VIL1 = VSS, VDD = 5 V (when pulled up) –660
–250
–70
mA
IIH1Z
VIH1 = VDD (in a high impedance state)
0
—
1.0
mA
IIL1Z
VIL1 = VSS (in a high impedance state)
–1.0
—
0
mA
IIH2
VIH2 = VDD1 (when pulled down)
5.0
18
60
mA
IIH2Z
VIH2 = VDD1 (in a high impedance state)
0
—
1.0
mA
IIL2Z
VIL2 = VSS (in a high impedance state) –1.0
—
0
mA
IIL3
VIL3 = VSS (when pulled up)
–60
–22
–6.0
mA
IIH3Z
VIH3 = VDD1 (in a high impedance state)
0
—
1.0
mA
IIL3Z
VIL3 = VSS (in a high impedance state) –1.0
—
0
mA
IIH4
VIH4 = VDD1
0
—
1.0
mA
IIL4
VIL4 = VSS
–1.0
–0.3
–0.1
mA
VIH1
—
1.2
—
1.5
V
VIL1
—
0
—
0.3
V
VIH1S
VDD = 5 V
4.0
—
5.0
V
VIL1S
VDD = 5 V
0
—
1.0
V
Input Voltage 2
(IN0, IN1, OSC1)
VIH2
—
1.2
—
1.5
V
VIL2
—
0
—
0.3
V
Input Voltage 3
(RESET, TST1, TST2)
VIH3
—
1.2
—
1.5
V
VIL3
—
0
—
0.3
V
Measuring
Circuit
3
4
12/37
¡ Semiconductor
MSM64P164
DC Characteristics (continued)
(VSS = 0 V, VDD1 = VDD = 1.5 V, VDD2 = 3.0 V, VDD3 = 4.5 V,
Ta = 0 to +65°C unless otherwise specified)
Parameter
(Pin Name)
Condition
Symbol
Min.
Typ.
Max.
Unit
0.05
0.1
0.3
V
0.25
1.0
1.5
V
Hysteresis Width
(P0.0 to P0.3)
(P2.0 to P2.3)
(P3.0 to P3.3)
(P4.0 to P4.3)
DVT1S
Hysteresis Width
(RESET, TST1, TST2)
DVT2
—
0.05
0.1
0.3
V
Input Pin Capacitance
(P0.0 to P0.3)
(P2.0 to P2.3)
(P3.0 to P3.3)
(P4.0 to P4.3)
CIN
—
—
—
5.0
pF
—
DVT1
VDD = 5 V
Measuring
Circuit
4
1
13/37
¡ Semiconductor
MSM64P164
Measuring circuit 1
RT0
CS0
RT0
RI0
CS0
IN0
XT
OSC1
Crystal
32.768 kHz
ROS
XT
OSC2
C1
C12
C2
VSS
VDD1 VDD2
A
VDD3
Ca
VDD
Ca
Cb, C12
ROS
RT0
CS0
RI0
Cb
V
V
: 1 mF
: 0.1 mF
: 300 kW
: 10 kW/2 kW
: 820 pF
: 10 kW
Measuring circuit 2
(*1)
INPUT
VIH
OUTPUT
(*2)
A
VIL
VSS
VDD1
VDD2
VDD3
VDD
14/37
¡ Semiconductor
MSM64P164
Measuring circuit 3
OUTPUT
(*3)
INPUT
A
VSS
VDD1
VDD2
VDD3
VDD
OUTPUT
Measuring circuit 4
(*3)
VIL
Waveform
Monitoring
INPUT
VIH
VSS
VDD1
VDD2
VDD3
VDD
*1 Input logic circuit to determine the specified measuring conditions.
*2 Measured at the specified output pins.
*3 Measured at the specified input pins.
15/37
¡ Semiconductor
MSM64P164
A/D Converter Characteristics
(VSS = 0 V, VDD = 1.5 V, Ta = 0 to +65°C unless otherwise specified)
Parameter
Symbol
Resistor
for Oscillation
RS0, RS1,
RT0,
RT0-1,
RT1
Input Current
Limiting Resistor
RI0, RI1
Condition
CS0, CT0, CS1 ≥ 740 pF
—
Min.
Typ.
Max.
Unit
2.0
—
—
kW
1.0
10
—
kW
Measuring
Circuit
5
Oscillation
Frequency
RS•RT Oscillation
Frequency Ratio
(*)
*
fOSC1
Resistor for oscillation = 2 kW
165
221
256
kHz
fOSC2
Resistor for oscillation = 10 kW
41.8
52.2
60.6
kHz
fOSC3
Resistor for oscillation = 200 kW
2.55
3.04
3.53
kHz
Kf1
RT0, RT0-1, RT1 = 2 kW
3.89
4.18
4.35
—
Kf2
RT0, RT0-1, RT1 = 10 kW
0.990
1.0
1.010
—
Kf3
RT0, RT0-1, RT1 = 200 kW
0.0561 0.0584 0.0637
—
Kfx is the ratio of the oscillation frequency by a sensor resistor to the oscillation frequency
by a reference resistor in the same condition.
Kfx =
fOSCX (RT0–CS0 Oscillation)
fOSCX (RT0-1–CS0 Oscillation)
fOSCX (RS0–CS0 Oscillation) ,
(x = 1, 2, 3)
fOSCX (RS0–CS0 Oscillation)
fOSCX (RT1–CS1 Oscillation)
, fOSCX (RS1–CS1 Oscillation)
16/37
¡ Semiconductor
MSM64P164
Measuring circuit 5
Oscillation Mode Specified
RT1 RS1 CS1 IN1
IN0 CS0 RS0
CRT0
RT0
RT0-1
CT0
RS0
CS0
(CROSC0)
RI0
RI1
CS1
RS1
RT1
(CROSC1)
RT0
RESET
TST1
P4.3
TST2
D. U. T.
P0.0
Frequency
Measurement
(fOSCX)
P0.1
P0.2
P0.3
VSS
VDD
VDD1
RT0, RT0-1, RT1 = 2 kW/10 kW/200 kW
RS0, RS1 = 10 kW
RI0, RI1 = 10 kW
CS0, CT0, CS1 = 820 pF
17/37
¡ Semiconductor
MSM64P164
AC Characteristics (Serial Interface)
(VSS = 0 V, VDD1 = 1.5 V, VDD = 5 V, Ta = 0 to +65°C)
Symbol
Condition
Min.
SCLK Input Fall Time
Parameter
tf
—
—
15
50
ns
SCLK Input Rise Time
tr
—
—
15
50
ns
SCLK Input "L" Level Pulse Width
tCWL
—
0.8
—
—
ms
SCLK Input "H" Level Pulse Width
tCWH
tCYC
—
0.8
—
—
ms
—
2.0
—
—
ms
—
ms
SCLK Input Cycle Time
Typ. Max.
Unit
SCLK Output Cycle Time
tCYC1(O) CPU is operating at 32.768 kHz.
—
30.5
SCLK Output Cycle Time
tCYC2(O) CPU is operating at 400 kHz.
—
2.5
—
ms
—
0.4
ms
—
—
—
ms
—
SOUT Output Delay Time
SIN Input Setup Time
tDDR
tDS
—
—
0.5
SIN Input Hold TIme
tDH
—
0.8
Cl = 10 pF
ms
tCYC
SCLK
(P4.2)
5V
tr
tf
tCWH
tCWL
tDDR
tDDR
SOUT
(P4.0)
5V
tDS
SIN
(P3.3)
tDH
tDS
5V
("H" level = 4 V, "L" level = 1 V)
18/37
¡ Semiconductor
MSM64P164
ABSOLUTE MAXIMUM RATINGS (3.0 V Spec.)
Parameter
(VSS = 0 V)
Unit
Symbol
Condition
Rating
Power Supply Voltage 1
VDD1
Ta = 25°C
–0.3 to +2.0
V
Power Supply Voltage 2
VDD2
Ta = 25°C
–0.3 to +4.0
V
Power Supply Voltage 3
VDD3
Ta = 25°C
–0.3 to +5.5
V
Power Supply Voltage 4
VDD
Ta = 25°C
–0.3 to +5.5
V
Input Voltage 1
VIN1
VDD2 input, Ta = 25°C
–0.3 to VDD2 + 0.3
V
Input Voltage 2
VIN2
VDD input, Ta = 25°C
–0.3 to VDD + 0.3
V
Output Voltage 1
Output Voltage 2
VOUT1
VOUT2
VDD2 output, Ta = 25°C
VDD3 output Ta = 25°C
–0.3 to VDD2 + 0.3
–0.3 to VDD3 + 0.3
V
V
Output Voltage 3
VOUT3
VDD output, Ta = 25°C
–0.3 to VDD + 0.3
V
Storage Temperature
TSTG
—
–55 to +150
°C
RECOMMENDED OPERATING CONDITIONS (3.0 V Spec.)
Parameter
Operating Temperature
Operating Voltage
External 400kHz RC Oscillator
Resistance
Crystal Oscillation Frequency
(VSS = 0 V)
Symbol
Condition
Range
Unit
Top
—
0 to +65
°C
VDD2
—
2.7 to 3.5
V
VDD
—
VDD2 to 5.25
V
ROS
—
90 to 500
kW
fXT
—
30 to 66
kHz
19/37
¡ Semiconductor
MSM64P164
ELECTRICAL CHARACTERISTICS (3.0 V Spec.)
DC Characteristics
Parameter
(VSS = 0 V, VDD2 = VDD = 3.0 V, Ta = 0 to +65°C unless otherwise specified)
Condition
Symbol
VDD1 Voltage
VDD1
Ca, Cb, C12 = 0.1 mF
VDD3 Voltage
VDD3
Ca, Cb, C12 = 0.1 mF
Crystal Oscillation
Start Voltage
Crystal Oscillation
Hold Voltage
Crystal Oscillation
Stop Detection Time
Internal Crystal
Oscillator Capacitance
External Crystal
Oscillator Capacitance
Internal Crystal
Oscillator Capacitance
Internal 400k RC
Oscillator Capacitance
400k RC Oscillation
Frequency
POR Generation
Voltage
POR Non-generation
Voltage
VSTA
+100%
–20%
+100%
–20%
Oscillation start time:
within 5 seconds
Min.
Typ.
Max.
Unit
1.3
1.5
1.7
V
4.3
4.5
4.7
V
2.7
—
—
V
VHOLD
—
2.7
—
—
V
TSTOP
—
0.1
—
1000
ms
CG
—
10
15
20
pF
Measuring
Circuit
1
CGEX
When external CG used
10
—
30
pF
CD
—
10
15
20
pF
COS
—
8
12
16
pF
300
400
620
kHz
0
—
0.7
V
2.7
—
3
V
fOSC
VPOR1
VPOR2
External resistor ROS = 100 kW
VDD2 = 2.7 to 3.5 V
When VDD2 is between VPOR1
and 3.0 V
No POR when VDD2 is between
VPOR2 and 3.0 V
Notes: 1. "POR" denotes Power On Reset.
2. "TSTOP" indicates that if the crystal oscillator stops over the value of TSTOP, the
system reset occurs.
20/37
¡ Semiconductor
MSM64P164
DC Characteristics (continued)
(VSS = 0 V, VDD2 = VDD = 3.0 V, Ta = 0 to +65°C unless otherwise specified)
Parameter
Symbol
Supply Current 1
IDD1
Supply Current 2
IDD2
Supply Current 3
IDD3
Condition
Min.
Typ.
Max.
Unit
—
1.0
4.0
mA
—
25
50
mA
—
220
450
mA
—
30
60
mA
RT0 = 10 kW
—
300
450
mA
RT0 = 2 kW
—
1300
2000
mA
CPU in halt state
(400k RC oscillation halt)
CPU in operating state
(400k RC oscillation halt)
CPU in operating state
(400k RC oscillation in operation)
Measuring
Circuit
Serial transfer,
Supply Current 4
IDD4
fSCK = 300 kHz,
CPU in operating state
1
(400k RC oscillation halt)
CPU in halt state
(400k RC oscillation
Supply Current 5
IDD5
halt), RC oscillator for
A/D converter is in
operating state
21/37
¡ Semiconductor
MSM64P164
DC Characteristics (continued)
(VSS = 0 V, VDD1 = 1.5 V, VDD2 = VDD = 3.0 V, VDD3 = 4.5 V,
Ta = 0 to +65°C unless otherwise specified)
Parameter
(Pin Name)
Condition
Symbol
Min.
Typ.
Max.
Unit
IOH1
VOH1 = VDD – 0.5 V
–6.0
–2.0
–0.7
mA
IOL1
VOL1 = 0.5 V
3.0
8.0
25
mA
IOL1S
VDD = 5 V, VOL1 = 0.5 V
4.0
12
36
mA
IOH2
VOH2 = VDD – 0.5 V
–6.0
–2.0
–0.7
mA
IOL2
VOL2 = 0.5 V
0.7
2.0
6.0
mA
IOL2S
VDD = 5 V, VOL2 = 0.5 V
1.0
3.0
9.0
mA
Output Current 3
(BD)
IOH3
VOH3 = VDD2 – 0.7 V
–6.0
–2.0
–0.7
mA
IOL3
VOL3 = 0.7 V
0.7
2.0
6.0
mA
Output Current 4
(RT0, RT1, RS0, RS1,
CRT0, CS0, CS1)
IOH4
VOH4 = VDD2 – 0.1 V
–2.5
–1.3
–0.7
mA
IOL4
VOL4 = 0.1 V
0.7
1.3
2.5
mA
VOH5 = VDD – 0.5 V
–1.5
–0.6
–0.15
mA
VOL5 = 0.5 V
0.15
0.6
1.5
mA
VDD = 5 V, VOL5S = 0.5 V
0.2
0.7
2.0
mA
IOH6
VOH6 = VDD2 – 0.5 V
–6.0
–2.0
–0.7
mA
IOL6
VOL6 = 0.5 V
0.7
2.0
6.0
mA
IOH7
VOH7 = VDD3 – 0.2 V
(VDD3 level)
—
—
–4.0
mA
IOMH7
VOMH7 = VDD2 + 0.2 V (VDD2 level)
4.0
—
—
mA
IOMH7S
VOMH7S = VDD2 – 0.2 V (VDD2 level)
—
—
–4.0
mA
IOML7
VOML7 = VDD1 + 0.2 V (VDD1 level)
4.0
—
—
mA
IOML7S
VOML7S = VDD1 – 0.2 V (VDD1 level)
—
—
–4.0
mA
IOL7
VOL7 = 0.2 V
4.0
—
—
mA
IOOH
VOH = VDD2
—
—
0.3
mA
IOOL
VOL = VSS
–0.3
—
—
mA
Output Current 1
(P1.0)
Output Current 2
(P1.1 to P1.3)
(P2.0 to P2.3)
(P3.0 to P3.3)
(P4.0 to P4.3)
IOH5
Output Current 5
(When L26 to L33 are
IOL5
configured as output
IOL5S
ports)
Output Current 6
(OSC2)
Output Current 7
(L0 to L33)
Output Leakage Current
(P1.0 to P1.3)
(P2.0 to P2.3)
(P3.0 to P3.3)
(P4.0 to P4.3)
(RT0, RT1, RS0, RS1,
CRT0, CS0, CS1)
(VSS level)
Measuring
Circuit
2
22/37
¡ Semiconductor
MSM64P164
DC Characteristics (continued)
(VSS = 0 V, VDD1 = 1.5 V, VDD2 = VDD = 3.0 V, VDD3 = 4.5 V,
Ta = 0 to +65°C unless otherwise specified)
Parameter
(Pin Name)
Input Current 1
(P0.0 to P0.3)
(P2.0 to P2.3)
(P3.0 to P3.3)
(P4.0 to P4.3)
Input Current 2
(IN0, IN1)
Input Current 3
(OSC1)
Input Current 4
(RESET, TST1, TST2)
Input Voltage 1
(P0.0 to P0.3)
(P2.0 to P2.3)
(P3.0 to P3.3)
(P4.0 to P4.3)
Symbol
Condition
Min.
Typ.
Max.
Unit
IIH1
VIH1 = VDD (when pulled down)
30
90
300
mA
IIL1
VIL1 = VSS (when pulled up)
–300
–90
–30
mA
IIH1S
VIH1 = VDD = 5 V (when pulled down)
80
250
800
mA
IIL1S
VIL1 = VSS, VDD = 5 V (when pulled up) –800
–250
–80
mA
IIH1Z
VIH1 = VDD (in a high impedance state)
0
—
1.0
mA
IIL1Z
VIL1 = VSS (in a high impedance state)
–1.0
—
0
mA
IIH2
VIH2 = VDD2 (when pulled down)
30
90
300
mA
IIH2Z
VIH2 = VDD2 (in a high impedance state)
0
—
1.0
mA
IIL2Z
VIL2 = VSS2 (in a high impedance state)
–1.0
—
0
mA
IIL3
VIL3 = VSS (when pulled up)
–300
–110
–10
mA
IIH3Z
VIH3 = VDD2 (in a high impedance state)
0
—
1.0
mA
IIL3Z
VIL3 = VSS (in a high impedance state)
–1.0
—
0
mA
IIH4
VIH4 = VDD2
0
—
1.0
mA
IIL4
VIL4 = VSS
–3.0
–1.5
–0.75
mA
VIH1
—
2.4
—
3.0
V
VIL1
—
0
—
0.6
V
VIH1S
VDD = 5 V
4.0
—
5.0
V
VIL1S
VDD = 5 V
0
—
1.0
V
Input Voltage 2
(IN0, IN1, OSC1)
VIH2
—
2.4
—
3.0
V
VIL2
—
0
—
0.6
V
Input Voltage 3
(RESET, TST1, TST2)
VIH3
—
2.4
—
3.0
V
VIL3
—
0
—
0.6
V
Measuring
Circuit
3
4
23/37
¡ Semiconductor
MSM64P164
DC Characteristics (continued)
(VSS = 0 V, VDD1 = 1.5 V, VDD2 = VDD = 3.0 V, VDD3 = 4.5 V,
Ta = 0 to +65°C unless otherwise specified)
Parameter
(Pin Name)
Condition
Symbol
Min.
Typ.
Max.
Unit
0.2
0.5
1.0
V
0.25
1.0
1.5
V
Hysteresis Width
(P0.0 to P0.3)
(P2.0 to P2.3)
(P3.0 to P3.3)
(P4.0 to P4.3)
DVT1S
Hysteresis Width
(RESET, TST1, TST2)
DVT2
—
0.2
0.5
1.0
V
Input Pin Capacitance
(P0.0 to P0.3)
(P2.0 to P2.3)
(P3.0 to P3.3)
(P4.0 to P4.3)
CIN
—
—
—
5.0
pF
—
DVT1
VDD = 5 V
Measuring
Circuit
4
1
24/37
¡ Semiconductor
MSM64P164
Measuring circuit 1
RT0
CS0
RT0
RI0
CS0
IN0
XT
OSC1
Crystal
32.768 kHz
ROS
XT
OSC2
C1
C12
C2
VSS
VDD2 VDD1
A
VDD3
Ca
VDD
Ca, Cb, C12
ROS
RT0
CS0
RI0
Cb
V
V
: 0.1 mF
: 100 kW
: 10 kW/2 kW
: 820 pF
: 10 kW
Measuring circuit 2
(*1)
INPUT
VIH
OUTPUT
(*2)
A
VIL
VSS
VDD1
VDD2
VDD3
VDD
25/37
¡ Semiconductor
MSM64P164
Measuring circuit 3
OUTPUT
(*3)
INPUT
A
VSS
VDD1
VDD2
VDD3
VDD
OUTPUT
Measuring circuit 4
(*3)
VIL
Waveform
Monitoring
INPUT
VIH
VSS
VDD1
VDD2
VDD3
VDD
*1 Input logic circuit to determine the specified measuring conditions.
*2 Measured at the specified output pins.
*3 Measured at the specified input pins.
26/37
¡ Semiconductor
MSM64P164
A/D Converter Characteristics
(VSS = 0 V, VDD2 = VDD = 3.0 V, Ta = 0 to +65°C unless otherwise specified)
Parameter
Symbol
Resistor
for Oscillation
RS0, RS1,
RT0,
RT0-1,
RT1
Input Current
Limiting Resistor
RI0, RI1
Condition
CS0, CT0, CS1 ≥ 740 pF
—
Min.
Typ.
Max.
Unit
1.0
—
—
kW
1.0
10
—
kW
Measuring
Circuit
5
Oscillation
Frequency
RS•RT Oscillation
Frequency Ratio
(*)
*
fOSC1
Resistor for oscillation = 2 kW
200
239
277
kHz
fOSC2
Resistor for oscillation = 10 kW
46.5
55.4
64.3
kHz
fOSC3
Resistor for oscillation = 200 kW
2.79
3.32
3.85
kHz
Kf1
RT0, RT0-1, RT1 = 2 kW
4.115
4.22
4.326
—
Kf2
RT0, RT0-1, RT1 = 10 kW
0.990
1.0
1.010
—
Kf3
RT0, RT0-1, RT1 = 200 kW
0.0573 0.0616 0.0659
—
Kfx is the ratio of the oscillation frequency by a sensor resistor to the oscillation frequency
by a reference resistor in the same condition.
Kfx =
fOSCX (RT0–CS0 Oscillation)
fOSCX (RT0-1–CS0 Oscillation)
fOSCX (RS0–CS0 Oscillation) ,
(x = 1, 2, 3)
fOSCX (RS0–CS0 Oscillation)
fOSCX (RT1–CS1 Oscillation)
, fOSCX (RS1–CS1 Oscillation)
27/37
¡ Semiconductor
MSM64P164
Measuring circuit 5
Oscillation Mode Specified
RT1 RS1 CS1 IN1
IN0 CS0 RS0
CRT0
RT0
RT0-1
CT0
RS0
CS0
(CROSC0)
RI0
RI1
CS1
RS1
RT1
(CROSC1)
RT0
RESET
TST1
P4.3
TST2
D. U. T.
P0.0
Frequency
Measurement
(fOSCX)
P0.1
P0.2
P0.3
VSS
VDD
VDD2
RT0, RT0-1, RT1 = 2 kW/10 kW/200 kW
RS0, RS1 = 10 kW
RI0, RI1 = 10 kW
CS0, CT0, CS1 = 820 pF
28/37
¡ Semiconductor
MSM64P164
AC Characteristics (Serial Interface)
(VSS = 0 V, VDD2 = 3 V, VDD = 5 V, Ta = 0 to +65°C)
Parameter
SCLK Input Fall Time
Symbol
Condition
Min.
tf
—
—
Typ. Max.
15
Unit
50
ns
tr
—
—
15
50
ns
SCLK Input "L" Level Pulse Width
tCWL
—
0.8
—
—
ms
SCLK Input "H" Level Pulse Width
tCWH
tCYC
—
0.8
—
—
ms
—
2.0
—
—
ms
—
ms
SCLK Input Rise Time
SCLK Input Cycle Time
SCLK Output Cycle Time
tCYC1(O) CPU is operating at 32.768 kHz.
—
30.5
SCLK Output Cycle Time
tCYC2(O) CPU is operating at 400 kHz.
—
2.5
—
ms
—
0.4
ms
—
—
—
—
ms
SOUT Output Delay Time
SIN Input Setup Time
tDDR
tDS
—
—
0.5
SIN Input Hold TIme
tDH
—
0.8
Cl = 10 pF
ms
tCYC
SCLK
(P4.2)
5V
tr
tf
tCWH
tCWL
tDDR
tDDR
SOUT
(P4.0)
5V
tDS
SIN
(P3.3)
tDH
tDS
5V
("H" level = 4 V, "L" level = 1 V)
29/37
¡ Semiconductor
MSM64P164
ABSOLUTE MAXIMUM RATINGS (1.5 V/3.0 V Spec., PROM Mode)
Parameter
Condition
PROM Power Supply Voltage
VCC
VCC = VDD1 = VDD2, Ta = 25°C
–0.3 to +6.7
V
Program Voltage
VPP
Ta = 25°C
–0.3 to +14.0
V
VI
VCC input, Ta = 25°C
–0.3 to VCC + 0.3
V
PROM Output Voltage
VO
VCC output, Ta = 25°C
–0.3 to VCC + 0.3
V
Storage Temperature
TSTG
—
–55 to +150
°C
PROM Input Voltage
Rating
(VSS = 0 V)
Unit
Symbol
RECOMMENDED OPERATING CONDITIONS (1.5 V/3.0 V Spec., PROM Mode)
(VSS = 0 V)
Parameter
Symbol
Condition
Range
Unit
Operating Temperature
Top
—
0 to 65
°C
VCC Power Supply Voltage
VCC
VCC = VDD1 = VDD2
4.75 to 5.25
V
VPP Power Supply Voltage
VPP
Input Voltage
During read
4.75 to 5.25
V
During write
12.0 to 13.0
V
VIH
VCC = VDD1 = VDD2
4 to VCC
V
VIL
—
0 to 1
V
30/37
¡ Semiconductor
MSM64P164
ELECTRICAL CHARACTERISTICS (1.5 V/3.0 V Spec., PROM Mode)
(1) Read Operation
DC Characteristics
(VDD1 = VDD2 = VPP = 5 V ±5%, Ta = 25°C ±5°C, unless otherwise specified)
Parameter
VCC Power Supply Current
(Standby)
VCC Power Supply Current
(Operating)
Input Voltage
Output Current
Symbol
Condition
VCC = VDD1 = VDD2
ICC1
CE = VIH
VCC = VDD1 = VDD2
ICC2
CE = VIL
VCC = VDD1 = VDD2
VIH
—
VIL
VCC = VDD1 = VDD2
IOH
VOH = VCC – 0.5 V
IOL
VOL = 0.5 V
Min. Typ. Max. Unit
—
—
35
mA
—
—
100
mA
4.0
—
VCC
V
0
—
1.0
V
–2.0 –0.7 –0.2
mA
0.2
mA
0.7
2.0
AC Characteristics
Parameter
(VCC = 5 V ±5%, VPP = VCC, Ta = 25°C ±5°C, unless otherwise specified)
Min. Typ. Max. Unit
Condition
Symbol
Address Access Time
tACC
OE = CE = VIL
—
—
120
ns
CE Access Time
tCE
OE = VIL
—
—
120
ns
OE Access Time
tOE
CE = VIL
—
—
50
ns
Output Disable Time
tDF
CE = VIL
0
—
40
ns
Measurement conditions:
Input pulse level ...................... 0.45 V to 4.55 V
Input rise/fall time ................. 5 ns
Threshold level ........................ input 0.8 V, 2 V/output 0.8 V, 2 V
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¡ Semiconductor
MSM64P164
Address Input
CE
tCE
OE
tACC
tOE
tDF
Data Output
32/37
¡ Semiconductor
MSM64P164
(2) Write Operation
DC Characteristics
(VSS = 0 V, VDD1 = VDD2 = 5 V ±5%, VPP = 12.5 V ±0.5 V, Ta = 25°C ±5°C, unless otherwise specified)
Min. Typ. Max. Unit
Symbol
Condition
Parameter
VPP Power Supply Current
IPP
CE = VIL
—
—
50
mA
VCC Power Supply Current
ICC
VCC = VDD1 = VDD2
—
—
100
mA
VIH
VCC = VDD1 = VDD2
4.0
—
VCC
V
0
—
1.0
V
Input Voltage
Output Current
VIL
IOH
IOL
—
VCC = VDD1 = VDD2
VOH = VCC – 0.5 V
VOL = 0.5 V
–2.0 –0.7 –0.2
mA
0.2
mA
0.7
2.0
AC Characteristics
(VSS = 0 V, VDD1 = VDD2 = 5 V ±5%, VPP = 12.5 V ±0.5 V, Ta = 25°C ±5°C, unless otherwise specified)
Min. Typ. Max. Unit
Symbol
Condition
Parameter
Address Setup Time
tAS
—
2.0
—
—
ms
OE Setup Time
Data Setup Time
tOES
tDS
—
—
2.0
2.0
—
—
—
—
ms
ms
Address Hold Time
tAH
—
0
—
—
ms
Data Hold Time
tDH
—
2.0
—
—
ms
OE Output Floating Delay Time
tDFP
—
0
—
130
ns
VPP Power Source Setup Time
tVS
—
2.0
—
—
ms
Initial Program Pulse Width
tPW
1.05
ms
Additional Program Pulse Width
tOPW
OE Output Effective Delay Time
tOE
VDD1 = VDD2
0.95 1.0
6 V ±0.25 V
VDD1 = VDD2
2.85
6 V ±0.25 V
—
—
— 78.75 ms
—
150
ns
Measurement conditions:
Input pulse level ...................... 0.45 V to 4.55 V
Input rise/fall time ................. less than 20 ns
Threshold level ........................ input 0.8 V, 2 V/output 0.8 V, 2 V
33/37
¡ Semiconductor
MSM64P164
Address Input
Address N
tAH
tAS
Data Input-Output
Data Input
Data Output
tDH
tDS
tOE
tDFP
VPP
tVS
CE
tPW
tOES
tOPW
OE
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ROS
Crystal
32.768 kHz
L33
L0
VSS
C2
C1
C12
VDD3
Cb
VDD2
Ca
VDD
VDD1
VPP
TST2
TST1
MSM64P164-xxx
(1.5 V spec.)
IN0
CS0
RS0
CRT0
RT0
IN1
CS1
RS1
RT1
BD
P4.3
P4.2
P4.1
P4.0
P3.3
1.5 V Spec. Application Circuit
OSC2
OSC1
VSS
XT
XT
RESET
P1.0
P1.1
P1.2
P1.3
P0.0
P0.1
P0.2
P0.3
Switch matrix
(4 ¥ 4)
RS0
*
1.5 V
• Without 5 V interface
• Temperature
measurement
by two thermistors
• CG of crystal oscillator :
Internal
RT0
RT1 RS1 CS1 RI1
C1
¡ Semiconductor
APPLICATION CIRCUITS
LCD
CS0
RI0
* Polarity is reversed when
compared to mask ROM
version of this device.
Buzzer
MSM64P164
35/37
Crystal
32.768 kHz
L33
L0
VSS
C2
C1
C12
VDD3
Cb
VDD2
VDD
VDD1
VPP
TST2
TST1
MSM64P164-xxx
(3 V spec.)
C2
Switch matrix
(4 ¥ 4)
RT0
RT1 RS1 CS1 RI1
RS0
CS0
*
*
3V
5V
CS
Ca
IN0
CS0
RS0
CRT0
RT0
IN1
CS1
RS1
RT1
BD
P4.3
P4.2
P4.1
P4.0
P3.3
3.0 V Spec. Application Circuit
CGEX
OSC2
OSC1
VSS
XT
XT
RESET
P1.0
P1.1
P1.2
P1.3
P0.0
P0.1
P0.2
P0.3
RI0
¡ Semiconductor
ROS
APPLICATION CIRCUITS (continued)
LCD
• With 5 V interface
• Temperature measurement
by two thermistors
• CGEX of crystal
oscillator : External
* Polarity is reversed when
compared to mask ROM
version of this device.
Buzzer
MSM64P164
36/37
OSC monitor
SCLK
SPR
To the serial communication interface
SOUT
(5 V (VDD) system)
SIN
¡ Semiconductor
MSM64P164
PACKAGE DIMENSIONS
(Unit : mm)
QFP80-P-1420-0.80-BK
Mirror finish
Package material
Lead frame material
Pin treatment
Solder plate thickness
Epoxy resin
42 alloy
Solder plating
5 mm or more
Package weight (g)
1.27 TYP.
Notes for Mounting the Surface Mount Type Package
The SOP, QFP, TSOP, SOJ, QFJ (PLCC), SHP and BGA are surface mount type packages, which
are very susceptible to heat in reflow mounting and humidity absorbed in storage.
Therefore, before you perform reflow mounting, contact Oki’s responsible sales person for the
product name, package name, pin number, package code and desired mounting conditions
(reflow method, temperature and times).
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