SAMHOP STM4470E

STM4470E
SamHop Microelectronics Corp.
May. 15 2007 ver1.0
N-Channel Enhancement Mode Field Effect Transistor
F E AT UR E S
PRODUCT SUMMARY
VDSS
S uper high dense cell design for low R DS (ON ).
RDS(ON) ( m ı Ω ) Max
ID
R ugged and reliable.
12 @ VGS = 10V
40V
S urface Mount P ackage.
E S D P rotected.
9.5A
15 @ VGS = 4.5V
SO-8
1
ABSOLUTE MAXIMUM RATINGS (TA=25 C unless otherwise noted)
Symbol
Limit
Unit
Drain-Source Voltage
VDS
40
V
Gate-Source Voltage
VGS
20
V
Parameter
Drain Current-Continuous a @TJ=25 C
b
-Pulsed
ID
9.5
A
IDM
39
A
Drain-Source Diode Forward Current a
IS
1.7
A
Maximum Power Dissipation a
PD
2.5
W
TJ, TSTG
-55 to 150
C
R JA
50
C /W
Operating Junction and Storage
Temperature Range
THERMAL CHARACTERISTICS
Thermal Resistance, Junction-to-Ambient a
1
STM4470E
ELECTRICAL CHARACTERISTICS (TA= 25 C unless otherwise noted)
Parameter
5
Min Typ C Max Unit
Symbol
Condition
Drain-Source Breakdown Voltage
BVDSS
VGS =0V, ID = 250uA
Zero Gate Voltage Drain Current
IDSS
VDS=32V, VGS = 0V
1
uA
Gate-Body Leakage
IGSS
VGS = 20V, VDS =0V
10
uA
Gate Threshold Voltage
VGS(th)
VDS = VGS, ID = 250uA
1.7
3
V
Drain-Source On-State Resistance
RDS(ON)
VGS= 10V, ID = 10A
10
12 m ohm
VGS = 4.5V, ID = 6A
12
15 m ohm
OFF CHARACTERISTICS
40
V
ON CHARACTERISTICS b
Forward Transconductance
DYNAMIC CHARACTERISTICS
CISS
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
SWITCHING CHARACTERISTICS
Rise Time
Turn-Off Delay Time
20
A
25
S
1500
PF
220
PF
150
PF
23
ns
22
ns
88
ns
27
ns
VDS =15V, ID = 10A,VGS =10V
28
nC
VDS =15V, ID = 10A,VGS =4.5V
12.5
nC
VDS =15V, ID = 10A
VGS =10V
3
nC
6
nC
VDS = 10V, ID =10A
c
Input Capacitance
Turn-On Delay Time
VDS = 10V, VGS = 10V
ID(ON)
gFS
On-State Drain Current
1
VDS =20V, VGS = 0V
f =1.0MHZ
c
tD(ON)
VDD = 15V
ID = 1A
VGS = 10V
RGEN = 6 ohm
t
tD(OFF)
Fall Time
t
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
2
STM4470E
ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted)
Parameter
Min Typ C Max Unit
Condition
Symbol
DRAIN-SOURCE DIODE CHARACTERISTICS b
Diode Forward Voltage
VGS = 0V, Is =1.7A
VSD
0.73
1.2
Notes
a.S urface Mounted on FR 4 Board, t 10sec.
b.Pulse Test:Pulse Width 300us, Duty Cycle 2%.
c.Guaranteed by design, not subject to production testing.
60
20
VG S=3.5 V
16
V G S =4V
I D , Drain C urrent (A)
ID , Drain C urrent(A)
50
40
VG S =10V
V G S =3V
30
20
10
0
V G S =2.5V
T j =125 C
12
8
-55 C
4
25 C
0
0
0.5
1
1.5
2
2.5
3
0.7
0
2.8
3.5
4.2
Figure 2. Transfer Characteristics
Figure 1. Output Characteristics
24
1.75
20
1.60
RDS(ON), On-Resistance
Normalized
RDS(on) (m ı )
2.1
VGS, Gate-to-Source Voltage (V)
VDS, Drain-to-Source Voltage (V)
16
VGS=4.5V
12
VGS=10V
8
1.4
4
VGS=10V
ID=10A
1.45
1.30
VGS=4.5V
ID=6A
1.15
1.0
0
1
1
10
20
30
40
50
0
60
25
50
75
100
125
150
Tj( C)
ID, Drain Current (A)
Tj, Junction Temperature ( C)
Figure 3. On-Resistance vs. Drain Current
and Gate Voltage
Figure 4. On-Resistance Variation with
Drain Current and Temperature
3
V
S T M4470E
B V DS S , Normalized
Drain-S ource B reakdown V oltage
V th, Normalized
G ate-S ource T hres hold V oltage
1.4
V DS =V G S
I D =250uA
1.2
1.0
0.8
0.6
0.4
0.2
-50 -25
0
25
50
75
1.15
I D =250uA
1.10
1.05
1.00
0.95
0.90
0.85
-50 -25
100 125
0
25
50
75 100 125
T j, J unction T emperature ( C )
T j, J unction T emperature ( C )
F igure 5. G ate T hres hold V ariation
with T emperature
F igure 6. B reakdown V oltage V ariation
with T emperature
36
20.0
I D =10A
Is , S ource-drain current (A)
R DS (on) (m ı )
30
24
125 C
18
12
75 C
25 C
6
0
0
2
4
6
8
10.0
25 C
1.0
10
75 C
125 C
0.2
0.4
0.6
0.8
1.0
1.2
V G S , G ate-S ource Voltage (V )
V S D , B ody Diode F orward V oltage (V )
F igure 7. On-R es is tance vs .
G ate-S ource V oltage
F igure 8. B ody Diode F orward V oltage
V ariation with S ource C urrent
4
STM4470E
10
VGS, Gate to Source Voltage (V)
2400
C , C apacitance (pF )
2000
6
Ciss
1600
1200
800
400
Coss
Crss
6
4
2
0
0
0
VDS=15V
ID=10A
8
5
10
15
20
25
0
30
4
VDS, Drain-to Source Voltage (V)
8
20
16
12
24
28
32
Qg, Total Gate Charge (nC)
Figure 10. Gate Charge
Figure 9. Capacitance
50
TD(on)
10
V DS =15V ,ID=1A
1
1
0.1
0.03
6 10
S
10
V G S =10V
1
10
RD
ID, Drain Current (A)
Switching Time (ns)
Tf
Tr
(O
10
TD(off)
100
60
N)
Lim
it
600
DC
ms
s
1s
VGS=10V
Single Pulse
TA=25 C
0.1
60 100 300 600
0m
1
10
30 50
VDS, Drain-Source Voltage (V)
Rg, Gate Resistance (Ω)
Figure 12. Maximum Safe
Operating Area
Figure 11.switching characteristics
Thermal Resistance
Normalized Transient
9
1
0.5
0.2
0.1
0.1
P DM
0.05
t1
t2
0.02
0.01
Single Pulse
0.01
0.00001
1. RthJA (t)=r (t) * R JAth
2. R th
JA=See Datasheet
(t)
3. TJM-TA = PDM* R JA th
4. Duty Cycle, D=t1/t2
on
0.0001
0.001
0.01
0.1
1
Square Wave Pulse Duration(sec)
Normalized Thermal Transient Impedance Curve
5
10
100
1000
STM4470E
PACKA GE OUTLINE DIMENSIONS
SO-8
1
L
E
D
A
C
0.015X45±
e
B
0.05 TYP.
A1
0.008TYP.
0.016 TYP.
H
MILLIMETERS
INCHES
SYMBOLS
MIN
A
A1
D
E
1.35
0.10
4.80
3.81
H
L
5.79
0.41
0±
MAX
1.75
0.25
4.98
3.99
6.20
1.27
8±
6
MIN
0.053
0.004
0.189
0.150
0.228
0.016
0±
MAX
0.069
0.010
0.196
0.157
0.244
0.050
8±
STM4470E
SO-8 Tape and Reel Data
SO-8 Carrier Tape
unit:р
PACKAGE
SOP 8N
150п
A0
6.40
B0
5.20
K0
D0
2.10
ӿ1.5
(MIN)
M
N
330
² 1
62
²1.5
D1
E
ӿ1.5 + 0.1 - 0.0
12.0
²0.3
E1
1.75
E2
5.5²0.05
P1
P2
T
8.0
4.0
2.0²0.05
0.3²0.05
S
G
R
V
P0
SO-8 Reel
UNIT:р
TAPE SIZE
12 р
REEL SIZE
ӿ330
W
W1
H
12.4+ 0.2 16.8- 0.4ӿ12.75
+ 0.15
7
K
2.0²0.15