S T P /B 3055L2 S amHop Microelectronics C orp. Nov 23, 2004 N-C hannel Logic Level E nhancement Mode Field E ffect Transistor F E AT UR E S P R ODUC T S UMMAR Y V DS S ID R DS (ON) ( mW) S uper high dense cell design for low R DS (ON ). Max R ugged and reliable. 40 @ V G S = 4.5V 20V TO-220 and TO-263 P ackage. 18A 60 @ V G S = 2.5V D D G G D S S G S TP S E R IE S TO-220 S TB S E R IE S TO-263(DD-P AK) S ABS OLUTE MAXIMUM R ATINGS (T C =25 C unless otherwise noted) S ymbol P arameter Limit Unit Drain-S ource Voltage V DS 20 V Gate-S ource Voltage V GS 12 V ID 18 A IDM 45 A Drain-S ource Diode Forward C urrent IS 15 A Maximum P ower Dissipation @ Tc=25 C PD 50 W T J , T S TG -55 to 175 C Drain C urrent-C ontinuous a -P ulsed @ TJ=25 C Operating and S torage Temperature R ange THE R MAL C HAR AC TE R IS TIC S Thermal R esistance, Junction-to-C ase R JC 3 C /W Thermal R esistance, Junction-to-Ambient R JA 50 C /W 1 S T P /B 3055L2 E LE CTR ICAL CHAR ACTE R IS TICS (T A =25 C unless otherwise noted) Parameter Min Typ C Max Unit S ymbol Condition Drain-S ource Breakdown Voltage BV DS S V GS = 0V, ID = 250uA Zero Gate Voltage Drain Current IDS S V DS = 16V, V GS = 0V 1 uA Gate-Body Leakage IGS S V GS = 12V, V DS = 0V 100 nA Gate Threshold Voltage V GS (th) V DS = V GS , ID = 250uA 1 1.7 V R DS (ON) V GS =4.5V, ID = 6.0A 25 40 m-ohm Drain-S ource On-S tate R esistance V GS =2.5V, ID = 5.2A 40 60 m-ohm OFF CHAR ACTE R IS TICS 20 V ON CHAR ACTE R IS TICS b ID(ON) gFS On-S tate Drain Current Forward Transconductance V DS = 5V, V GS = 4.5V 0.6 20 A 17 S 800 PF 205 PF 165 PF 21.5 ns 8.5 ns 39.5 ns 20 ns V DS =10V,ID =6A,V GS =10V 14.7 nC V DS =10V,ID =6A,V GS =4.5V 11.6 nC V DS =10V, ID = 6A, V GS =10V 2.2 nC 3.6 nC V DS = 10V, ID = 5.0A DYNAMIC CHAR ACTE R IS TICS c Input Capacitance C IS S Output Capacitance C OS S R everse Transfer Capacitance CRSS S WITCHING CHAR ACTE R IS TICS Turn-On Delay Time R ise Time Turn-Off Delay Time V DS =8V, V GS = 0V f =1.0MH Z c tD(ON) tr tD(OFF) Fall Time tf Total Gate Charge Qg Gate-S ource Charge Q gs Gate-Drain Charge Q gd V DD = 10V, ID = 1A, V GE N = 4.5V, R L = 10 ohm R GEN = 6 ohm 2 S TP/B3055L2 ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) Parameter b DRAIN-SOURCE DIODE CHARACTERISTICS Diode Forward Voltage 1.1 VGS = 0V, Is =15A VSD 1.3 Notes a.Surface Mounted on FR4 Board, t 10sec. b.Pulse Test:Pulse Width 300us, Duty Cycle 2%. c.Guaranteed by design, not subject to production testing. 25 20 25 C VGS=10,9,8,7,6,5,4,3V 20 -55 C ID, Drain Current (A) ID, Drain Current(A) 16 12 8 VGS=2V 4 0 0 1 2 3 4 5 15 5 0 0.0 6 2.2 RDS(ON), On-Resistance Normalized 1200 Ciss 600 0 0 2 4 6 8 10 1.8 2.4 3.0 3.6 VGS=4.5V ID=6A 1.8 1.4 1.0 0.6 0.2 Coss Crss 1.2 Figure 2. Transfer Characteristics 1500 300 0.6 VGS, Gate-to-Source Voltage (V) Figure 1. Output Characteristics 900 Tj=125 C 10 VDS, Drain-to-Source Voltage (V) C, Capacitance (pF) 5 C Min Typ Max Unit Condition Symbol 0 12 -50 -25 0 25 50 75 100 125 Tj( C) VDS, Drain-to Source Voltage (V) Figure 4. On-Resistance Variation with Temperature Figure 3. Capacitance 3 V V DS =V G S I D =250uA 1.2 1.1 1.0 0.9 0.8 0.7 0.6 0 25 50 75 100 125 1.15 I D =250uA 1.10 1.05 1.00 0.95 0.90 0.85 -50 -25 0 25 50 75 100 125 T j, J unction T emperature ( C ) T j, J unction T emperature ( C ) F igure 5. G ate T hres hold V ariation with T emperature F igure 6. B reakdown V oltage V ariation with T emperature 24 20 20 10 Is , S ource-drain current (A) gF S , T rans conductance (S ) -50 -25 16 12 8 4 V DS =10V 0 V G S , G ate to S ource V oltage (V ) B V DS S , Normalized Drain-S ource B reakdown V oltage 1.3 0 5 10 15 20 T J =25 C 1 0.4 25 0.6 0.8 1.0 1.2 1.4 I DS , Drain-S ource C urrent (A) V S D , B ody Diode F orward V oltage (V ) F igure 7. T rans conductance V ariation with Drain C urrent F igure 8. B ody Diode F orward V oltage V ariation with S ource C urrent 60 10 V DS =10V I D =6A 8 I D , Drain C urrent (A) V th, Normalized G ate-S ource T hres hold V oltage S T P /B 3055L2 6 4 2 10 RD 0 2 4 6 8 10 12 14 16 im it 10 10 0.1 ms 0m s 1s DC V G S =4.5V S ingle P ulse T c=25 C 0.1 Qg, T otal G ate C harge (nC ) )L 11 0.03 0 ON S( 1 10 20 50 V DS , Drain-S ource V oltage (V ) F igure 10. Maximum S afe O perating Area F igure 9. G ate C harge 4 S T P /B 3055L2 4 V DD ton RL V IN D tf 90% 90% V OUT V OUT VG S R GE N toff td(off) tr td(on) 10% INVE R TE D 10% G 90% S V IN 50% 50% 10% P ULS E WIDTH F igure 12. S witching Waveforms F igure 11. S witching T es t C ircuit r(t),Normalized E ffective T ransient T hermal Impedance 2 1 D=0.5 0.2 0.1 0.1 P DM 0.05 t1 0.02 0.01 1. 2. 3. 4. S ingle P uls e 0.01 0.01 0.1 1 10 100 t2 R θJ C (t)=r (t) * R θJ C R θJ C =S ee Datas heet T J M-T C = P * R θJ C (t) Duty C ycle, D=t1/t2 1000 S quare Wave P uls e Duration (ms ec) F igure 13. Normalized T hermal T rans ient Impedance C urve 5 10000 S T P /B 3055L2 S T P /B 3055L2 TO-263 Tape and Reel Data TO-263 Carrier Tape UNIT:㎜ PACKAGE TO-252 (16 ㎜) A0 B0 K0 6.80 ±0.1 10.3 ±0.1 2.50 ±0.1 D0 D1 E E1 E2 P0 P1 P2 T ψ2 ψ1.5 + 0.1 - 0 16.0 0.3± 1.75 0.1± 7.5 ±0.15 8.0 ±0.1 4.0 ±0.1 2.0 ±0.15 0.3 ±0.05 TO-263 Reel S UNIT:㎜ TAPE SIZE 16 ㎜ REEL SIZE ψ 330 M ψ330 ± 0.5 N W ψ97 ± 1.0 17.0 + 1.5 - 0 T H K S 2.2 ψ13.0 + 0.5 - 0.2 10.6 2.0 ±0.5 7 G R V