SAMHOP STB3055L2

S T P /B 3055L2
S amHop Microelectronics C orp.
Nov 23, 2004
N-C hannel Logic Level E nhancement Mode Field E ffect Transistor
F E AT UR E S
P R ODUC T S UMMAR Y
V DS S
ID
R DS (ON)
( mW)
S uper high dense cell design for low R DS (ON ).
Max
R ugged and reliable.
40 @ V G S = 4.5V
20V
TO-220 and TO-263 P ackage.
18A
60 @ V G S = 2.5V
D
D
G
G
D
S
S
G
S TP S E R IE S
TO-220
S TB S E R IE S
TO-263(DD-P AK)
S
ABS OLUTE MAXIMUM R ATINGS (T C =25 C unless otherwise noted)
S ymbol
P arameter
Limit
Unit
Drain-S ource Voltage
V DS
20
V
Gate-S ource Voltage
V GS
12
V
ID
18
A
IDM
45
A
Drain-S ource Diode Forward C urrent
IS
15
A
Maximum P ower Dissipation @ Tc=25 C
PD
50
W
T J , T S TG
-55 to 175
C
Drain C urrent-C ontinuous
a
-P ulsed
@ TJ=25 C
Operating and S torage Temperature R ange
THE R MAL C HAR AC TE R IS TIC S
Thermal R esistance, Junction-to-C ase
R JC
3
C /W
Thermal R esistance, Junction-to-Ambient
R JA
50
C /W
1
S T P /B 3055L2
E LE CTR ICAL CHAR ACTE R IS TICS (T A =25 C unless otherwise noted)
Parameter
Min Typ C Max Unit
S ymbol
Condition
Drain-S ource Breakdown Voltage
BV DS S
V GS = 0V, ID = 250uA
Zero Gate Voltage Drain Current
IDS S
V DS = 16V, V GS = 0V
1
uA
Gate-Body Leakage
IGS S
V GS = 12V, V DS = 0V
100
nA
Gate Threshold Voltage
V GS (th)
V DS = V GS , ID = 250uA
1
1.7
V
R DS (ON)
V GS =4.5V, ID = 6.0A
25
40
m-ohm
Drain-S ource On-S tate R esistance
V GS =2.5V, ID = 5.2A
40
60
m-ohm
OFF CHAR ACTE R IS TICS
20
V
ON CHAR ACTE R IS TICS b
ID(ON)
gFS
On-S tate Drain Current
Forward Transconductance
V DS = 5V, V GS = 4.5V
0.6
20
A
17
S
800
PF
205
PF
165
PF
21.5
ns
8.5
ns
39.5
ns
20
ns
V DS =10V,ID =6A,V GS =10V
14.7
nC
V DS =10V,ID =6A,V GS =4.5V
11.6
nC
V DS =10V, ID = 6A,
V GS =10V
2.2
nC
3.6
nC
V DS = 10V, ID = 5.0A
DYNAMIC CHAR ACTE R IS TICS c
Input Capacitance
C IS S
Output Capacitance
C OS S
R everse Transfer Capacitance
CRSS
S WITCHING CHAR ACTE R IS TICS
Turn-On Delay Time
R ise Time
Turn-Off Delay Time
V DS =8V, V GS = 0V
f =1.0MH Z
c
tD(ON)
tr
tD(OFF)
Fall Time
tf
Total Gate Charge
Qg
Gate-S ource Charge
Q gs
Gate-Drain Charge
Q gd
V DD = 10V,
ID = 1A,
V GE N = 4.5V,
R L = 10 ohm
R GEN = 6 ohm
2
S TP/B3055L2
ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted)
Parameter
b
DRAIN-SOURCE DIODE CHARACTERISTICS
Diode Forward Voltage
1.1
VGS = 0V, Is =15A
VSD
1.3
Notes
a.Surface Mounted on FR4 Board, t 10sec.
b.Pulse Test:Pulse Width 300us, Duty Cycle 2%.
c.Guaranteed by design, not subject to production testing.
25
20
25 C
VGS=10,9,8,7,6,5,4,3V
20
-55 C
ID, Drain Current (A)
ID, Drain Current(A)
16
12
8
VGS=2V
4
0
0
1
2
3
4
5
15
5
0
0.0
6
2.2
RDS(ON), On-Resistance
Normalized
1200
Ciss
600
0
0
2
4
6
8
10
1.8
2.4
3.0
3.6
VGS=4.5V
ID=6A
1.8
1.4
1.0
0.6
0.2
Coss
Crss
1.2
Figure 2. Transfer Characteristics
1500
300
0.6
VGS, Gate-to-Source Voltage (V)
Figure 1. Output Characteristics
900
Tj=125 C
10
VDS, Drain-to-Source Voltage (V)
C, Capacitance (pF)
5
C
Min Typ Max Unit
Condition
Symbol
0
12
-50
-25
0
25
50
75
100 125
Tj( C)
VDS, Drain-to Source Voltage (V)
Figure 4. On-Resistance Variation with
Temperature
Figure 3. Capacitance
3
V
V DS =V G S
I D =250uA
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0
25
50
75
100 125
1.15
I D =250uA
1.10
1.05
1.00
0.95
0.90
0.85
-50 -25
0
25
50
75 100 125
T j, J unction T emperature ( C )
T j, J unction T emperature ( C )
F igure 5. G ate T hres hold V ariation
with T emperature
F igure 6. B reakdown V oltage V ariation
with T emperature
24
20
20
10
Is , S ource-drain current (A)
gF S , T rans conductance (S )
-50 -25
16
12
8
4
V DS =10V
0
V G S , G ate to S ource V oltage (V )
B V DS S , Normalized
Drain-S ource B reakdown V oltage
1.3
0
5
10
15
20
T J =25 C
1
0.4
25
0.6
0.8
1.0
1.2
1.4
I DS , Drain-S ource C urrent (A)
V S D , B ody Diode F orward V oltage (V )
F igure 7. T rans conductance V ariation
with Drain C urrent
F igure 8. B ody Diode F orward V oltage
V ariation with S ource C urrent
60
10
V DS =10V
I D =6A
8
I D , Drain C urrent (A)
V th, Normalized
G ate-S ource T hres hold V oltage
S T P /B 3055L2
6
4
2
10
RD
0
2
4
6
8
10 12 14 16
im
it
10
10
0.1
ms
0m
s
1s
DC
V G S =4.5V
S ingle P ulse
T c=25 C
0.1
Qg, T otal G ate C harge (nC )
)L
11
0.03
0
ON
S(
1
10
20
50
V DS , Drain-S ource V oltage (V )
F igure 10. Maximum S afe
O perating Area
F igure 9. G ate C harge
4
S T P /B 3055L2
4
V DD
ton
RL
V IN
D
tf
90%
90%
V OUT
V OUT
VG S
R GE N
toff
td(off)
tr
td(on)
10%
INVE R TE D
10%
G
90%
S
V IN
50%
50%
10%
P ULS E WIDTH
F igure 12. S witching Waveforms
F igure 11. S witching T es t C ircuit
r(t),Normalized E ffective
T ransient T hermal Impedance
2
1
D=0.5
0.2
0.1
0.1
P DM
0.05
t1
0.02
0.01
1.
2.
3.
4.
S ingle P uls e
0.01
0.01
0.1
1
10
100
t2
R θJ C (t)=r (t) * R θJ C
R θJ C =S ee Datas heet
T J M-T C = P * R θJ C (t)
Duty C ycle, D=t1/t2
1000
S quare Wave P uls e Duration (ms ec)
F igure 13. Normalized T hermal T rans ient Impedance C urve
5
10000
S T P /B 3055L2
S T P /B 3055L2
TO-263 Tape and Reel Data
TO-263 Carrier Tape
UNIT:㎜
PACKAGE
TO-252
(16 ㎜)
A0
B0
K0
6.80
±0.1
10.3
±0.1
2.50
±0.1
D0
D1
E
E1
E2
P0
P1
P2
T
ψ2
ψ1.5
+ 0.1
- 0
16.0
0.3±
1.75
0.1±
7.5
±0.15
8.0
±0.1
4.0
±0.1
2.0
±0.15
0.3
±0.05
TO-263 Reel
S
UNIT:㎜
TAPE SIZE
16 ㎜
REEL SIZE
ψ 330
M
ψ330
± 0.5
N
W
ψ97
± 1.0
17.0
+ 1.5
- 0
T
H
K
S
2.2
ψ13.0
+ 0.5
- 0.2
10.6
2.0
±0.5
7
G
R
V