SAMHOP STM9410

STM9410
SamHop Microelectronics Corp.
OCT.29, 2004
V1.1
N-Channel Enhancement Mode Field Effect Transistor
FEATURES
PRODUCT SUMMARY
VDSS
30V
ID
RDS(ON)
6.3A
Super high dense cell design for low RDS(ON).
( m Ω ) MAX
Rugged and reliable.
32 @ VGS = 10V
Surface Mount Package.
55 @ VGS = 4.5V
SO-8
1
ABSOLUTE MAXIMUM RATINGS (TA=25 C unless otherwise noted)
Symbol
Limit
Unit
Drain-Source Voltage
VDS
30
V
Gate-Source Voltage
VGS
20
V
Parameter
Drain Current-Continuous a @TA=25 C
b
-Pulsed
ID
6.3
A
IDM
25
A
Drain-Source Diode Forward Current a
IS
1.7
A
Maximum Power Dissipation a
PD
2.5
W
TJ, TSTG
-55 to 150
C
R JA
50
C/W
Operating Junction and Storage
Temperature Range
THERMAL CHARACTERISTICS
Thermal Resistance, Junction-to-Ambient a
1
STM9410
ELECTRICAL CHARACTERISTICS (TA =25 C unless otherwise noted)
Parameter
Min Typ C Max Unit
Symbol
Condition
Drain-Source Breakdown Voltage
BVDSS
VGS = 0V, ID = 250uA
Zero Gate Voltage Drain Current
IDSS
VDS = 24V, VGS = 0V
1
Gate-Body Leakage
IGSS
VGS = 20V, VDS = 0V
100 nA
Gate Threshold Voltage
VGS(th)
VDS = VGS, ID = 250uA
Drain-Source On-State Resistance
RDS(ON)
On-State Drain Current
ID(ON)
gFS
OFF CHARACTERISTICS
30
V
uA
ON CHARACTERISTICS b
Forward Transconductance
DYNAMIC CHARACTERISTICS
CISS
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
SWITCHING CHARACTERISTICS
Rise Time
Turn-Off Delay Time
2.5
V
VGS =10V, ID = 6A
27
32
m ohm
VGS = 4.5V,ID = 5A
50
55
m ohm
VDS = 5V, VGS = 10V
15
A
9
S
830
PF
140
PF
100
PF
17
ns
6
ns
23
ns
11
ns
VDS =15V, ID =1A,VGS =10V
17
nC
VDS =15V, ID =1A,VGS =4.5V
8
nC
3
nC
3
nC
VDS = 5V, ID = 6A
c
Input Capacitance
Turn-On Delay Time
1.7
1
VDS =15V, VGS = 0V
f =1.0MHZ
c
tD(ON)
VDD = 15V,
ID = 1A,
VGS = 10V,
RGEN = 10 ohm
tr
tD(OFF)
Fall Time
tf
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
VDS =15V, ID = 1A,
VGS =10V
2
STM9410
ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted)
Parameter
C
Min Typ Max Unit
Condition
Symbol
DRAIN-SOURCE DIODE CHARACTERISTICS b
Diode Forward Voltage
VGS = 0V, Is =1.7A
VSD
0.82 1.1
Notes
a.Surface Mounted on FR4 Board, t 10sec.
b.Pulse Test:Pulse Width 300us, Duty Cycle 2%.
c.Guaranteed by design, not subject to production testing.
25
10
VGS=5,4.3,2V
20
ID, Drain Current (A)
ID, Drain Current(A)
8
6
4
2
0
VGS=1.5V
0
0.5
1
1.5
2
2.5
25 C
15
10
Tj=125 C
5
-55 C
0
0.0
3
VDS, Drain-to-Source Voltage (V)
C, Capacitance (pF)
Ciss
800
600
400
0
Coss
Crss
0
5
10
15
20
25
3.0
4.0
5.0
6.0
Figure 2. Transfer Characteristics
RDS(ON), On-Resistance(Ohms)
1200
200
2.0
VGS, Gate-to-Source Voltage (V)
Figure 1. Output Characteristics
1000
1.0
30
0.030
VGS=10V
0.025
0.020
Tj=125 C
0.015
25 C
0.010
-55 C
0.005
0
0
5
10
15
20
VDS, Drain-to Source Voltage (V)
ID, Drain Current(A)
Figure 3. Capacitance
Figure 4. On-Resistance Variation with
Drain Current and Temperature
3
V
1.09
B V DS S , Normalized
Drain-S ource B reakdown V oltage
V th, Normalized
G ate-S ource T hres hold V oltage
S T M9410
V DS =V G S
I D =250uA
1.06
1.03
1.00
0.97
0.94
0.91
-50 -25
0
25
50
75
100 125 150
1.05
1.00
0.95
0.90
0.85
-50 -25
0
25
50
75 100 125 150
T j, J unction T emperature ( C )
F igure 5. G ate T hres hold V ariation
with T emperature
F igure 6. B reakdown V oltage V ariation
with T emperature
20.0
20
Is , S ource-drain current (A)
gF S , T rans conductance (S )
ID=-250uA
1.10
T j, J unction T emperature ( C )
25
15
10
5
V DS =5V
0
0
5
10
10.0
1.0
15
20
0.4
0.6
0.8
1.0
1.2
1.4
I DS , Drain-S ource C urrent (A)
V S D , B ody Diode F orward V oltage (V )
F igure 7. T rans conductance V ariation
with Drain C urrent
F igure 8. B ody Diode F orward V oltage
V ariation with S ource C urrent
10
40
V DS =15V
I D =1A
8
I D , Drain C urrent (A)
V G S , G ate to S ource V oltage (V )
1.15
6
4
2
RD
10
ON
S(
0
3
6
9
12 15
18
Qg, T otal G ate C harge (nC )
it
10m
11
s
ms
1s
DC
V G S =10V
S ingle P ulse
T A =25 C
0.1
0.1
21 24
im
100
0.03
0
)L
1
10
30 50
V DS , Drain-S ource V oltage (V )
F igure 10. Maximum S afe
O perating Area
F igure 9. G ate C harge
4
STM9410
VDD
t on
RL
V IN
D
td(off)
tf
90%
90%
VOUT
VOUT
VGS
RGEN
toff
tr
td(on)
10%
INVERTED
10%
G
90%
S
VIN
50%
50%
10%
PULSE WIDTH
Figure 12. Switching Waveforms
Figure 11. Switching Test Circuit
r(t),Normalized Effective
Transient Thermal Impedance
2
1
Duty Cycle=0.5
0.2
PDM
0.1
0.1
t1
0.05
1. RqJA (t)=r (t) * RqJA
2. RqJA=See Datasheet
3. TJM-TA = PDM* RqJA (t)
4. Duty Cycle, D=t1/t2
0.02
Single Pulse
0.01
10
-4
10
-3
t2
10
-2
10
-1
1
Square Wave Pulse Duration (sec)
Figure 13. Normalized Thermal Transient Impedance Curve
5
10
100
STM9410
PACKAGE OUTLINE DIMENSIONS
SO-8
1
L
E
D
A
C
0.015X45°
B
0.016 TYP.
SYMBOLS
A
A1
D
E
H
L
A1
e
0.05 TYP.
0.008
TYP.
H
MILLIMETERS
MIN
1.35
0.10
4.80
3.81
5.79
0.41
0°
MAX
1.75
0.25
4.98
3.99
6.20
1.27
8°
6
INCHES
MIN
0.053
0.004
0.189
0.150
0.228
0.016
0°
MAX
0.069
0.010
0.196
0.157
0.244
0.050
8°
STM9410
SO-8 Tape and Reel Data
SO-8 Carrier Tape
unit:㎜
PACKAGE
SOP 8N
150㏕
A0
6.40
B0
5.20
K0
D0
D1
E
E1
E2
2.10
ψ1.5
(MIN)
ψ1.5
+ 0.1
- 0.0
12.0
±0.3
1.75
5.5
±0.05
M
N
W
W1
H
K
330
± 1
62
±1.5
P1
P2
T
8.0
4.0
2.0
±0.05
0.3
±0.05
S
G
R
V
P0
SO-8 Reel
UNIT:㎜
TAPE SIZE
12 ㎜
REEL SIZE
ψ330
12.4
+ 0.2
16.8
- 0.4
7
ψ12.75
+ 0.15
2.0
±0.15