STM9410 SamHop Microelectronics Corp. OCT.29, 2004 V1.1 N-Channel Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY VDSS 30V ID RDS(ON) 6.3A Super high dense cell design for low RDS(ON). ( m Ω ) MAX Rugged and reliable. 32 @ VGS = 10V Surface Mount Package. 55 @ VGS = 4.5V SO-8 1 ABSOLUTE MAXIMUM RATINGS (TA=25 C unless otherwise noted) Symbol Limit Unit Drain-Source Voltage VDS 30 V Gate-Source Voltage VGS 20 V Parameter Drain Current-Continuous a @TA=25 C b -Pulsed ID 6.3 A IDM 25 A Drain-Source Diode Forward Current a IS 1.7 A Maximum Power Dissipation a PD 2.5 W TJ, TSTG -55 to 150 C R JA 50 C/W Operating Junction and Storage Temperature Range THERMAL CHARACTERISTICS Thermal Resistance, Junction-to-Ambient a 1 STM9410 ELECTRICAL CHARACTERISTICS (TA =25 C unless otherwise noted) Parameter Min Typ C Max Unit Symbol Condition Drain-Source Breakdown Voltage BVDSS VGS = 0V, ID = 250uA Zero Gate Voltage Drain Current IDSS VDS = 24V, VGS = 0V 1 Gate-Body Leakage IGSS VGS = 20V, VDS = 0V 100 nA Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250uA Drain-Source On-State Resistance RDS(ON) On-State Drain Current ID(ON) gFS OFF CHARACTERISTICS 30 V uA ON CHARACTERISTICS b Forward Transconductance DYNAMIC CHARACTERISTICS CISS Output Capacitance COSS Reverse Transfer Capacitance CRSS SWITCHING CHARACTERISTICS Rise Time Turn-Off Delay Time 2.5 V VGS =10V, ID = 6A 27 32 m ohm VGS = 4.5V,ID = 5A 50 55 m ohm VDS = 5V, VGS = 10V 15 A 9 S 830 PF 140 PF 100 PF 17 ns 6 ns 23 ns 11 ns VDS =15V, ID =1A,VGS =10V 17 nC VDS =15V, ID =1A,VGS =4.5V 8 nC 3 nC 3 nC VDS = 5V, ID = 6A c Input Capacitance Turn-On Delay Time 1.7 1 VDS =15V, VGS = 0V f =1.0MHZ c tD(ON) VDD = 15V, ID = 1A, VGS = 10V, RGEN = 10 ohm tr tD(OFF) Fall Time tf Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd VDS =15V, ID = 1A, VGS =10V 2 STM9410 ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) Parameter C Min Typ Max Unit Condition Symbol DRAIN-SOURCE DIODE CHARACTERISTICS b Diode Forward Voltage VGS = 0V, Is =1.7A VSD 0.82 1.1 Notes a.Surface Mounted on FR4 Board, t 10sec. b.Pulse Test:Pulse Width 300us, Duty Cycle 2%. c.Guaranteed by design, not subject to production testing. 25 10 VGS=5,4.3,2V 20 ID, Drain Current (A) ID, Drain Current(A) 8 6 4 2 0 VGS=1.5V 0 0.5 1 1.5 2 2.5 25 C 15 10 Tj=125 C 5 -55 C 0 0.0 3 VDS, Drain-to-Source Voltage (V) C, Capacitance (pF) Ciss 800 600 400 0 Coss Crss 0 5 10 15 20 25 3.0 4.0 5.0 6.0 Figure 2. Transfer Characteristics RDS(ON), On-Resistance(Ohms) 1200 200 2.0 VGS, Gate-to-Source Voltage (V) Figure 1. Output Characteristics 1000 1.0 30 0.030 VGS=10V 0.025 0.020 Tj=125 C 0.015 25 C 0.010 -55 C 0.005 0 0 5 10 15 20 VDS, Drain-to Source Voltage (V) ID, Drain Current(A) Figure 3. Capacitance Figure 4. On-Resistance Variation with Drain Current and Temperature 3 V 1.09 B V DS S , Normalized Drain-S ource B reakdown V oltage V th, Normalized G ate-S ource T hres hold V oltage S T M9410 V DS =V G S I D =250uA 1.06 1.03 1.00 0.97 0.94 0.91 -50 -25 0 25 50 75 100 125 150 1.05 1.00 0.95 0.90 0.85 -50 -25 0 25 50 75 100 125 150 T j, J unction T emperature ( C ) F igure 5. G ate T hres hold V ariation with T emperature F igure 6. B reakdown V oltage V ariation with T emperature 20.0 20 Is , S ource-drain current (A) gF S , T rans conductance (S ) ID=-250uA 1.10 T j, J unction T emperature ( C ) 25 15 10 5 V DS =5V 0 0 5 10 10.0 1.0 15 20 0.4 0.6 0.8 1.0 1.2 1.4 I DS , Drain-S ource C urrent (A) V S D , B ody Diode F orward V oltage (V ) F igure 7. T rans conductance V ariation with Drain C urrent F igure 8. B ody Diode F orward V oltage V ariation with S ource C urrent 10 40 V DS =15V I D =1A 8 I D , Drain C urrent (A) V G S , G ate to S ource V oltage (V ) 1.15 6 4 2 RD 10 ON S( 0 3 6 9 12 15 18 Qg, T otal G ate C harge (nC ) it 10m 11 s ms 1s DC V G S =10V S ingle P ulse T A =25 C 0.1 0.1 21 24 im 100 0.03 0 )L 1 10 30 50 V DS , Drain-S ource V oltage (V ) F igure 10. Maximum S afe O perating Area F igure 9. G ate C harge 4 STM9410 VDD t on RL V IN D td(off) tf 90% 90% VOUT VOUT VGS RGEN toff tr td(on) 10% INVERTED 10% G 90% S VIN 50% 50% 10% PULSE WIDTH Figure 12. Switching Waveforms Figure 11. Switching Test Circuit r(t),Normalized Effective Transient Thermal Impedance 2 1 Duty Cycle=0.5 0.2 PDM 0.1 0.1 t1 0.05 1. RqJA (t)=r (t) * RqJA 2. RqJA=See Datasheet 3. TJM-TA = PDM* RqJA (t) 4. Duty Cycle, D=t1/t2 0.02 Single Pulse 0.01 10 -4 10 -3 t2 10 -2 10 -1 1 Square Wave Pulse Duration (sec) Figure 13. Normalized Thermal Transient Impedance Curve 5 10 100 STM9410 PACKAGE OUTLINE DIMENSIONS SO-8 1 L E D A C 0.015X45° B 0.016 TYP. SYMBOLS A A1 D E H L A1 e 0.05 TYP. 0.008 TYP. H MILLIMETERS MIN 1.35 0.10 4.80 3.81 5.79 0.41 0° MAX 1.75 0.25 4.98 3.99 6.20 1.27 8° 6 INCHES MIN 0.053 0.004 0.189 0.150 0.228 0.016 0° MAX 0.069 0.010 0.196 0.157 0.244 0.050 8° STM9410 SO-8 Tape and Reel Data SO-8 Carrier Tape unit:㎜ PACKAGE SOP 8N 150㏕ A0 6.40 B0 5.20 K0 D0 D1 E E1 E2 2.10 ψ1.5 (MIN) ψ1.5 + 0.1 - 0.0 12.0 ±0.3 1.75 5.5 ±0.05 M N W W1 H K 330 ± 1 62 ±1.5 P1 P2 T 8.0 4.0 2.0 ±0.05 0.3 ±0.05 S G R V P0 SO-8 Reel UNIT:㎜ TAPE SIZE 12 ㎜ REEL SIZE ψ330 12.4 + 0.2 16.8 - 0.4 7 ψ12.75 + 0.15 2.0 ±0.15