SAMHOP STD432S

STU/D432S
SamHop Microelectronics Corp.
Nov,19,2007 ver1.4
N-Channel Logic Level Enhancement Mode Field Effect Transistor
4
FEATURES
PRODUCT SUMMARY
VDSS
ID
40V
50A
RDS(ON)
Super high dense cell design for low RDS(ON).
( m W ) Max
Rugged and reliable.
9 @ VGS = 10V
TO-252 and TO-251 Package.
D
D
G
D
G
S
STU SERIES
TO-252AA(D-PAK)
S
G
STD SERIES
TO-251(l-PAK)
S
ABSOLUTE MAXIMUM RATINGS (TC=25 C unless otherwise noted)
Symbol
Parameter
Drain-Source Voltage
Gate-Source Voltage
25 C
Drain Current-Continuous @Ta
b
-Pulsed
a
Drain-Source Diode Forward Current
Avalanche Energy
ID
50
A
IDM
100
20
A
A
A
VDS
a
Avalanche Current
Unit
VGS
Limit
40
20
IS
I AS
E AS
c
23
130
mJ
PD
50
W
TJ, TSTG
-55 to 175
C
c
Maximum Power Dissipation
a
Ta= 25 C
Operating Junction and Storage
Temperature Range
V
V
THERMAL CHARACTERISTICS
Thermal Resistance, Junction-to-Case
R JC
3
C /W
Thermal Resistance, Junction-to-Ambient
R JA
50
C /W
1
STU/D432S
ELECTRICAL CHARACTERISTICS (TC=25 C unless otherwise noted)
Parameter
5
Min Typ Max Unit
Symbol
Condition
Drain-Source Breakdown Voltage
BVDSS
V GS = 0V, ID = 250uA
Zero Gate Voltage Drain Current
IDSS
V DS = 32V, V GS =0V
1
Gate-Body Leakage
IGSS
V GS = 20V, V DS = 0V
100 nA
Gate Threshold Voltage
VGS(th)
V DS = V GS , ID = 250uA
Drain-Source On-State Resistance
RDS(ON)
On-State Drain Current
ID(ON)
gFS
OFF CHARACTERISTICS
ON CHARACTERISTICS
40
V
uA
a
Forward Transconductance
DYNAMIC CHARACTERISTICS
1.6
3
V
V GS = 10V , ID =10A
7
9
m ohm
V GS = 4.5V, ID =5A
9
11
m ohm
VDS = 10V, VGS = 10V
1.25
30
A
28
S
1130
PF
240
PF
145
PF
18
ns
22
ns
61
ns
9.6
ns
VDS =15V, ID =10A,VGS =10V
23.5
nC
VDS =15V, ID =10A,VGS =4.5V
11.5
nC
2.7
nC
nC
VDS = 10V, ID = 10A
b
Input Capacitance
CISS
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
VDS =15V, VGS = 0V
f =1.0MHZ
SWITCHING CHARACTERISTICS b
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
tD(ON)
tr
tD(OFF)
Fall Time
tf
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
VDD = 15V
ID = 10 A
VGS = 10V
RGEN = 3.3 ohm
VDS =15V, ID = 10A
VGS =10V
2
3.2
S T U/D432S
E LE CTR ICAL CHAR ACTE R IS TICS (T C =25 C unless otherwise noted)
Parameter
Min Typ Max Unit
Condition
S ymbol
DR AIN-S OUR CE DIODE CHAR ACTE R IS TICS a
Diode Forward Voltage
0.91
V GS = 0V, Is = 20A
VSD
1.3
Notes
a.Pulse Test:Pulse Width 300us, Duty Cycle 2%.
b.Guaranteed by design, not subject to production testing.
c. Start ing TJ=25 c , L = 0.5 mH , RG = 25 W , I AS = 23 A, VDD <
-V(BR)DSS ( See Figure13 )
100
60
V G S =10V
V G S =4V
48
V G S =3.5V
I D , Drain C urrent (A)
ID , Drain C urrent(A)
80
60
40
V G S =3V
20
0
V G S =2.5V
0
36
-55 C
24
T j=125 C
25 C
12
0
0.5
1
2
1.5
2.5
3
0
V DS , Drain-to-S ource Voltage (V )
2.1
2.8
3.5
4.2
F igure 2. Trans fer C haracteris tics
2.0
R DS (ON) , On-R es is tance
Normalized
20
16
R DS (on) (m W)
1.4
V G S , G ate-to-S ource Voltage (V )
F igure 1. Output C haracteris tics
V G S =4.5V
12
8
V G S =10V
4
1
0.7
1
20
40
60
80
1.8
1.4
V G S =4.5V
I D =5A
1.2
1.0
0
100
V G S =10V
I D =10A
1.6
0
25
50
75
100
125
150
T j( C )
I D , Drain C urrent (A)
T j, J unction T emperature ( C )
F igure 3. On-R es is tance vs . Drain C urrent
and G ate V oltage
F igure 4. On-R es is tance Variation with
Drain C urrent and Temperature
3
V
B V DS S , Normalized
Drain-S ource B reakdown V oltage
1.6
V DS =V G S
I D =250uA
1.4
1.2
1.0
0.8
0.6
0.4
0.2
-50 -25
0
25
50
75
100 125 150
1.40
I D =250uA
1.30
1.20
1.10
1.00
0.90
0.80
-50 -25
0
25
50
75
100 125 150
T j, J unction T emperature ( C )
T j, J unction T emperature ( C )
F igure 5. G ate T hres hold V ariation
with T emperature
F igure 6. B reakdown V oltage V ariation
with T emperature
60
30
I D =10A
Is , S ource-drain current (A)
25
R DS (on) (m W)
6
V th, Normalized
G ate-S ource T hres hold V oltage
S T U/D432S
20
125 C
15
10
25 C
75 C
5
0
0
2
4
6
8
125 C
10
1
10
V G S , G ate- S ource Voltage (V )
25 C
20
0
0.24
0.48
0.72
0.96
1.20
V S D , B ody Diode F orward V oltage (V )
F igure 7. On-R es is tance vs .
G ate-S ource V oltage
F igure 8. B ody Diode F orward V oltage
V ariation with S ource C urrent
4
STU/D432S
10
VGS, Gate to Source Voltage (V)
1800
1500
900
600
Coss
300
Crss
0
0
6
4
2
0
5
10
15
20
25
30
0
4
8
VDS, Drain-to Source Voltage (V)
12
16
20
24
28 32
Qg, Total Gate Charge (nC)
Figure 10. Gate Charge
Figure 9. Capacitance
600
10
V DS =15V ,ID=10A
1
V G S =10V
1
6 10
it
Lim
10
Rg, Gate Resistance (W)
10
0m
s
ms
s
1s
DC
1
0.5
0.1
60 100 300 600
1m
10
N)
TD(on)
100
(O
Tf
S
Tr
TD(off )
ID, Drain Current (A)
100
60
RD
350
Switching Time (ns)
6
C, Capacitance (pF)
Ciss
1200
VDS=15V
ID=10A
8
VGS=10V
Single Pulse
Tc=25 C
1
10
30
VDS, Drain-Source Voltage (V)
Figure 12. Maximum Safe
Operating Area
Figure 11.switching characteristics
5
60
STU/D432S
V ( BR )D S S
15V
D R IVE R
L
VDS
tp
D .U .T
RG
+
- VD D
IA S
20V
A
IAS
0.0 1
tp
Unclamped Inductive Waveforms
Unclamped Inductive Test Circuit
F igure 13b.
F igure 13a.
2
r(t),Normalized Effective
Transient Thermal Impedance
1
D=0.5
0.2
0.1
0.1
P DM
0.05
t1
0.02
0.01
1. RθJA (t)=r (t) * RθJA
2. RθJA=See Datasheet
3. TJM-TA = PDM* RθJA (t)
4. Duty Cycle, D=t1/t2
SINGLE PULSE
0.01
10
-5
10
-4
t2
10
-3
10
-2
10
-1
Square Wave Pulse Duration (sec)
Figure 14. Normalized Thermal Transient Impedance Curve
6
1
10
S T U/D432S
7
S T U/D432S
E
A
b3
C2
L3
E1
D
H
b2
L4
e
b
L2
A1
L
L1
C2
b
b2
b3
L2
A1
L4
L
L1
L3
10
483
0.814
864
232
0.508
6.000
6.400
4.902
2.290
9.601
0.010
0.066
1.397
2.743
1.100
387
0.584
0.889
1.092
436
REF.
00
6.604
5.004
BSC
210
0.127
0.940
1.651
REF.
REF.
8
7
0.019
32
4
6
0.020
36
4
0.023
0.035
43
4
REF.
4
0.193
0.090
78
0.0004
0.026
0.055
0.108
0.043
0.197
BSC
402
0.005
0.037
0.065
REF.
REF.
S T U/D432S
TO251 Tube/TO-252 Tape and Reel Data
TO-251 Tube
" A"
TO-252 Carrier Tape
UNIT:㎜
PACKAGE
TO-252
(16 ㎜)
A0
6.80
±0.1
B0
K0
10.3
±0.1
2.50
±0.1
D0
D1
E
E1
E2
P0
P1
P2
T
ψ2
ψ1.5
+ 0.1
- 0
16.0
0.3±
1.75
0.1±
7.5
±0.15
8.0
±0.1
4.0
±0.1
2.0
±0.15
0.3
±0.05
TO-252 Reel
S
UNIT:㎜
TAPE SIZE
16 ㎜
REEL SIZE
ψ 330
M
ψ330
± 0.5
N
W
ψ97
± 1.0
17.0
+ 1.5
- 0
T
H
K
S
2.2
ψ13.0
+ 0.5
- 0.2
10.6
2.0
±0.5
9
G
R
V