STU/D3055L2-60 SamHop Microelectronics Corp. Nov 26 , 2004 Ver1.2 N-Channel Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY VDSS ID RDS(ON) Super high dense cell design for low RDS(ON). ( m Ω) Max Rugged and reliable. 65 @ VGS = 4.5V 20V TO-252 and TO-251 Package. 14A 90 @ VGS = 2.5V D D G D G S STU SERIES TO-252AA(D-PAK) S G STD SERIES TO-251(l-PAK) S ABSOLUTE MAXIMUM RATINGS (TA=25 C unless otherwise noted) Symbol Parameter Limit Unit Drain-Source Voltage VDS 20 V Gate-Source Voltage VGS 12 V ID 14 A IDM 23 A IS 10 A PD 50 W a Drain Current-Continuous @T J=125 C b -Pulsed (300ms Pulse Width) Drain-Source Diode Forward Current Maximum Power Dissipation a a Operating Junction and Storage Temperature Range TJ, TSTG -55 to 150 C THERMAL CHARACTERISTICS Thermal Resistance, Junction-to-Case R JC 3 C /W Thermal Resistance, Junction-to-Ambient R JA 50 C /W 1 STU/D3055L2-60 ELECTRICAL CHARACTERISTICS (TA 25 C unless = otherwise noted) Parameter Min Typ C Max Unit Symbol Condition Drain-Source Breakdown Voltage BVDSS VGS 0V, ID 250uA Zero Gate Voltage Drain Current IDSS VDS 16V, VGS 0V 1 uA Gate-Body Leakage IGSS VGS 12V, VDS 0V 100 nA Gate Threshold Voltage VGS(th) VDS VGS, ID = 250uA 1.2 1.8 V RDS(ON) VGS 4.5V, ID 6.0A 50 65 m-ohm Drain-Source On-State Resistance VGS 2.5V, ID 5.2A 75 90 m-ohm OFF CHARACTERISTICS ON CHARACTERISTICS ID(ON) gFS Forward Transconductance DYNAMIC CHARACTERISTICS CISS Output Capacitance COSS Reverse Transfer Capacitance CRSS SWITCHING CHARACTERISTICS Turn-Off Delay Time VDS = 5V, VGS = 4.5V 0.7 15 A 10 S 528 PF 139 PF 107 PF 13.7 ns 8.9 ns 25.4 ns 14.1 ns VDS=10V,ID =6A,VGS=10V 14.5 nC VDS=10V,ID =6A,VGS=4.5V 7.2 nC VDS =10V, ID = 6A VGS =10V 1.3 nC 2.1 nC VDS 10V, ID 6.0A c Input Capacitance Rise Time V b On-State Drain Current Turn-On Delay Time 20 VDS =8V, VGS = 0V f =1.0MHZ c tD(ON) t tD(OFF) Fall Time t Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd VDD = 10V ID = 1A VGEN = 4.5V RL = 10 ohm RGEN = 6 ohm 2 S T U/D3055L2-60 E LE CTR ICAL CHAR ACTE R IS TICS (T A=25 C unless otherwise noted) Parameter DR AIN-S OUR CE DIODE CHAR ACTE R IS TICS b Diode Forward Voltage 1 V GS = 0V, Is =10A VSD 1.3 Notes a.S urface Mounted on FR 4 Board, t 10sec. b.Pulse Test:Pulse Width 300us, Duty Cycle 2%. c.Guaranteed by design, not subject to production testing. 25 10 25 C V G S =10,9,8,7,6,5,4,3V 20 I D , Drain C urrent (A) ID , Drain C urrent(A) 8 6 V G S =2V 4 2 15 T j=125 C 10 5 -55 C 0 0 2 4 6 8 10 0 0.0 12 0.5 V DS , Drain-to-S ource Voltage (V ) 1200 900 600 C is s 300 0 C os s C rs s 0 2 4 6 8 10 1.5 2 2.5 3 F igure 2. Trans fer C haracteris tics R DS (ON) , On-R es is tance(Ohms ) 1500 1 V G S , G ate-to-S ource Voltage (V ) F igure 1. Output C haracteris tics C , C apacitance (pF ) 5 C Min Typ Max Unit Condition S ymbol 12 2.2 1.8 V G S =4.5V I D =6A 1.4 1.0 0.6 0.2 0 -50 -25 0 25 50 75 100 125 T j( C ) V DS , Drain-to S ource Voltage (V ) F igure 4. On-R es is tance Variation with Temperature F igure 3. C apacitance 3 V V DS =V G S I D =250uA 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0 25 50 75 100 125 1.15 I D =250uA 1.10 1.05 1.00 0.95 0.90 0.85 -50 -25 0 25 50 75 100 125 T j, J unction T emperature ( C ) T j, J unction T emperature ( C ) F igure 5. G ate T hres hold V ariation with T emperature F igure 6. B reakdown V oltage V ariation with T emperature 24 20 20 10 Is , S ource-drain current (A) gF S , T rans conductance (S ) -50 -25 V G S , G ate to S ource V oltage (V ) B V DS S , Normalized Drain-S ource B reakdown V oltage 1.8 16 12 8 4 0 V DS =10V 0 5 10 15 20 1 T J =25 C 0 0.4 25 0.6 0.8 1.0 1.2 1.4 I DS , Drain-S ource C urrent (A) V S D , B ody Diode F orward V oltage (V ) F igure 7. T rans conductance V ariation with Drain C urrent F igure 8. B ody Diode F orward V oltage V ariation with S ource C urrent 40 10 V DS =10V I D =6A 8 I D , Drain C urrent (A) V th, Normalized G ate-S ource T hres hold V oltage S T U/D3055L2-60 6 4 2 10 0 2 4 6 8 10 12 14 16 ) Li m it 10 11 0.1 DC 0m ms s 1s V G S =4.5V S ingle P ulse T c=25 C 0.1 Qg, T otal G ate C harge (nC ) (O N 10 0.03 0 R DS 1 10 20 50 V DS , Drain-S ource V oltage (V ) F igure 10. Maximum S afe O perating Area F igure 9. G ate C harge 4 S T U/D3055L2-60 V DD ton V IN D tf 90% 90% V OUT V OUT VG S R GE N toff td(off) tr td(on) RL 10% INVE R TE D 10% 6 G 90% S V IN 50% 50% 10% P ULS E WIDTH F igure 12. S witching Waveforms F igure 11. S witching T es t C ircuit r(t),Normalized E ffective T ransient T hermal Impedance 2 1 D=0.5 0.2 0.1 0.1 P DM 0.05 t1 0.02 1. 2. 3. 4. 0.01 S ING LE P ULS E 0.01 10 -5 10 -4 10 -3 10 -2 10 -1 t2 R θJ A (t)=r (t) * R θJ A R θJ A =S ee Datas heet T J M-T A = P DM* R θJ A (t) Duty C ycle, D=t1/t2 1 S quare Wave P uls e Duration (s ec) F igure 13. Normalized T hermal T rans ient Impedance C urve 5 10 S T U/D3055L2-60 6 S T U/D3055L2-60 5 95 7 84 L2 9 6.00 35 05 85 0.94 4 3 0 9 36 2.29 9.70 1.425 0.650 0.600 BSC 1 1.625 0.850 REF. 0.090 82 56 6 0.024 7 9 7 30 3 3 41 3 3 5 1 4 BSC 398 0.064 33 REF. S T U/D3055L2-60 TO251 Tube/TO-252 Tape and Reel Data TO-251 Tube " A" TO-252 Carrier Tape UNIT:㎜ PACKAGE TO-252 (16 ㎜) A0 6.80 ±0.1 B0 K0 10.3 ±0.1 2.50 ±0.1 D0 D1 E E1 E2 P0 P1 P2 T ψ2 ψ1.5 + 0.1 - 0 16.0 0.3± 1.75 0.1± 7.5 ±0.15 8.0 ±0.1 4.0 ±0.1 2.0 ±0.15 0.3 ±0.05 TO-252 Reel S UNIT:㎜ TAPE SIZE 16 ㎜ REEL SIZE M N W T H ψ 330 ψ330 ± 0.5 ψ97 ± 1.0 17.0 + 1.5 - 0 2.2 ψ13.0 + 0.5 - 0.2 8 K S 10.6 2.0 ±0.5 G R V