SavantIC Semiconductor Product Specification 2SD2241 Silicon NPN Power Transistors DESCRIPTION ·With TO-220F package ·High DC current gain : hFE=2000 (Min) ·Low saturation voltage ·Complement to type 2SB1481 ·DARLINGTON APPLICATIONS ·With switching applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Absolute maximum ratings (Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 100 V VCEO Collector-emitter voltage Open base 100 V VEBO Emitter-base voltage Open collector 5 V IC Collector current ±4 A ICM Collector current-peak ±6 A IB Base current 0.3 A PC Collector dissipation Ta=25 2.0 TC=25 25 W Tj Junction temperature 150 Tstg Storage temperature -55~150 SavantIC Semiconductor Product Specification 2SD2241 Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX V(BR)CEO Collector-emitter breakdown voltage IC=10mA ;IB=0 VCEsat Collector-emitter saturation voltage IC=3A ;IB=6mA 1.5 V VBEsat Base-emitter saturation voltage IC=3A ;IB=6mA 2.0 V ICBO Collector cut-off current VCB=100V ;IE=0 20 µA IEBO Emitter cut-off current VEB=5V; IC=0 2.5 mA hFE-1 DC current gain IC=1.5A ; VCE=2V 2000 hFE-2 DC current gain IC=3A ; VCE=2V 1000 VECF Diode forward voltage IE=1A ; IB=0 2.0 V 100 UNIT V Switching times ton Turn-on time ts Storage time tf Fall time IB1=-IB2=6mA VCCA30V ,RL=10C Duty cycleD1% 2 0.2 µs 1.5 µs 0.6 µs SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions 3 2SD2241 SavantIC Semiconductor Product Specification 2SD2241 Silicon NPN Power Transistors 4 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 5 2SD2241