SAVANTIC 2SD2241

SavantIC Semiconductor
Product Specification
2SD2241
Silicon NPN Power Transistors
DESCRIPTION
·With TO-220F package
·High DC current gain : hFE=2000 (Min)
·Low saturation voltage
·Complement to type 2SB1481
·DARLINGTON
APPLICATIONS
·With switching applications
PINNING
PIN
DESCRIPTION
1
Base
2
Collector
3
Emitter
Absolute maximum ratings (Ta=25 )
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
100
V
VCEO
Collector-emitter voltage
Open base
100
V
VEBO
Emitter-base voltage
Open collector
5
V
IC
Collector current
±4
A
ICM
Collector current-peak
±6
A
IB
Base current
0.3
A
PC
Collector dissipation
Ta=25
2.0
TC=25
25
W
Tj
Junction temperature
150
Tstg
Storage temperature
-55~150
SavantIC Semiconductor
Product Specification
2SD2241
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
V(BR)CEO
Collector-emitter breakdown voltage
IC=10mA ;IB=0
VCEsat
Collector-emitter saturation voltage
IC=3A ;IB=6mA
1.5
V
VBEsat
Base-emitter saturation voltage
IC=3A ;IB=6mA
2.0
V
ICBO
Collector cut-off current
VCB=100V ;IE=0
20
µA
IEBO
Emitter cut-off current
VEB=5V; IC=0
2.5
mA
hFE-1
DC current gain
IC=1.5A ; VCE=2V
2000
hFE-2
DC current gain
IC=3A ; VCE=2V
1000
VECF
Diode forward voltage
IE=1A ; IB=0
2.0
V
100
UNIT
V
Switching times
ton
Turn-on time
ts
Storage time
tf
Fall time
IB1=-IB2=6mA
VCCA30V ,RL=10C
Duty cycleD1%
2
0.2
µs
1.5
µs
0.6
µs
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions
3
2SD2241
SavantIC Semiconductor
Product Specification
2SD2241
Silicon NPN Power Transistors
4
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
5
2SD2241