Inchange Semiconductor Product Specification 2SC5439 Silicon NPN Power Transistors DESCRIPTION ・With TO-220F package ・High collector breakdown voltage ・Excellent switching times APPLICATIONS ・Switching regulator applications ・High voltage switching applications ・DC-DC converter applications ・Inverter lighting applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-220F) and symbol R O 体 T U 导 D 半 N O C 固电 I EM S E G N A INCH Absolute maximum ratings (Ta=25℃) SYMBOL VCBO VCEO VEBO PARAMETER CONDITIONS VALUE UNIT Collector-base voltage Open emitter 1000 V Collector-emitter voltage Open base 450 V Emitter-base voltage Open collector 9 V IC Collector current 8 A ICM Collector current-peak 16 A IB Base current 1 A PC Collector power dissipation Ta=25℃ 2 TC=25℃ 30 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ Inchange Semiconductor Product Specification 2SC5439 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-emitter breakdown voltage IC=10mA; IB=0 450 V V(BR)CBO Collector-base breakdown voltage IC=1mA; IE=0 1000 V VCEsat Collector-emitter saturation voltage IC=3.2A; IB=0.64 A 1.0 V VBEsat Base-emitter saturation voltage IC=3.2A; IB=0.64 A 1.5 V ICBO Collector cut-off current VCB=1000V; IE=0 100 μA IEBO Emitter cut-off current VEB=7V; IC=0 10 μA hFE-1 DC current gain IC=1mA ; VCE=5V 10 DC current gain IC=1A ; VCE=5V 14 hFE-2 CONDITIONS MIN TYP. MAX R O 体 T U 导 D 半 N O C 固电 I EM S E G N A INCH UNIT 34 Switching times ton ts tf Turn-on time Storage time 0.2 IB1=0.64A ;IB2=1.28A VCC≈200V;RL=62.5Ω Fall time 2.0 0.15 2 3.5 μs μs μs Inchange Semiconductor Product Specification 2SC5439 Silicon NPN Power Transistors PACKAGE OUTLINE R O 体 T U 导 D 半 N O C 固电 I EM S E G N A INCH Fig.2 outline dimensions 3 Inchange Semiconductor Product Specification 2SC5439 Silicon NPN Power Transistors R O 体 T U 导 D 半 N O C 固电 I EM S E G N A INCH 4