SAVANTIC MJW21191

SavantIC Semiconductor
Product Specification
MJW21191
Silicon PNP Power Transistors
DESCRIPTION
·With TO-247 package
·Complement to type MJW21192
·Wild area of safe operation
APPLICATIONS
·Designed for power audio output, high
power drivers in audio amplifiers
PINNING
PIN
DESCRIPTION
1
Emitter
2
Collector
3
Base
ABSOLUTE MAXIMUM RATINGS(Tc=25 )
SYMBOL
PARAMETER
CONDITIONS
MAX
UNIT
VCBO
Collector-base voltage
Open emitter
-150
V
VCEO
Collector-emitter voltage
Open base
-150
V
VEBO
Emitter-base voltage
Open collector
-5
V
IC
Collector current
-8
A
ICM
Collector current-peak
-16
A
IB
Base current
-2
A
PD
Total power dissipation
100
W
Tj
Junction temperature
-65~150
Tstg
Storage temperature
-65~150
TC=25
THERMAL CHARACTERISTICS
SYMBOL
Rth j-C
PARAMETER
Thermal resistance from junction to case
VALUE
0.65
UNIT
/W
SavantIC Semiconductor
Product Specification
MJW21191
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
SYMBOL
PARAMETER
VCEO(SUS)
Collector-emitter sustaining voltage
IC=-10mA ;IB=0
VCE(sat)-1
Collector-emitter saturation voltage
IC=-4A; IB=-0.4A
-1.0
V
VCE(sat)-2
Collector-emitter saturation voltage
IC=-8A; IB=-1.6A
-2.0
V
VBE(ON)
Base-emitter on voltage
IC=-4A ; VCE=-2V
-2.0
V
ICES
Collector cut-off current
VCB=-150V; IE=0
-10
µA
IEBO
Emitter cut-off current
VEB=-5V; IC=0
-10
µA
hFE-1
DC current gain
IC=-4A ; VCE=-2V
15
hFE-2
DC current gain
IC=-8A ; VCE=-2V
5
Transition frequency
IC=-1.0A ; VCE=-10V,f=1MHz
fT
CONDITIONS
2
MIN
TYP.
MAX
-150
4.0
UNIT
V
100
MHz
SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions
3
MJW21191