B772 PNP Type Elektronische Bauelemente Plastic Encapsulate Transistors RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free TO-126 Features 2.7±0.2 7.6±0.2 * Low speed switching 1.3±0.2 4.0±0.1 10.8±0.2 O 3.1± 0.1 MAXIMUM RATINGS* TA=25 C unless otherwise noted o Symbol Value Units VCBO -40 V VCEO Collector-Emitter Voltage -30 V VEBO Emitter-Base Voltage -6 V IC Collector Current –Continuous -3 A PC Collector Dissipation 1.25 W TJ Junction Temperature 150 o -55-150 o Storage Temperature 2 3 2.2±0.1 Collector-Base Voltage Tstg Parameter 1 1.27±0.1 15.5±0.2 0.76 ±0.1 2.29 Typ. 4.58±0.1 C 0.5±0.1 1: Emitter 2: Collector 3: Base C Dimens ions in Millimeters ELECTRICAL CHARACTERISTICS（Tamb=25℃ Parameter Symbol unless Test otherwise conditions specified） MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO Ic=-100μA ，IE=0 -40 V Collector-emitter breakdown voltage V(BR)CEO IC= -10 mA , -30 V Emitter-base breakdown voltage V(BR)EBO IE= -100 μA，IC=0 -6 V Collector cut-off current ICBO VCB= -40 V , IE=0 -1 μA Collector cut-off current ICEO VCE=-30 V , IB=0 -10 μA Emitter cut-off current IEBO VEB=-6V , -1 μA DC current gain hFE（1） VCE= -2V, IC= -1A Collector-emitter saturation voltage VCE(sat) IC=-2A, IB= -0.2A -0.5 V Base-emitter saturation voltage VBE(sat) IC=-2A, IB= -0.2A -1.5 V Transition frequency VCE= -5V, fT IB=0 IC=0 60 IC=-0.1A 400 80 f = 10MHz MHz CLASSIFICATION OF hFE(1) Rank R O Y GR Range 60-120 100-200 160-320 200-400 http://www.SeCoSGmbH.com/ 01-Jun-2004 Rev. B Any changing of specification will not be informed individual Page 1 of 2 B772 PNP Type Elektronische Bauelemente Plastic Encapsulate Transistors Typical Characteristics 1000 IB = -10mA IB = -9mA -1.6 IB = -8mA IB = -7mA -1.2 IB = -6mA IB = -5mA IB = -4mA -0.8 IB = -3mA IB = -2mA -0.4 hFE, DC CURRENT GAIN IC[A], COLLECTOR CURRENT -2.0 100 10 IB = -1mA 0 -4 -8 -12 VCE = -2V 1 -16 -1 -20 -10 VCE[V], COLLECTOR-EMITTER VOLTAGE 1000 IC = 10· I B IE = 0 f=1MHz VBE(sat) -100 -10 VCE(sat) -1 -10 -100 -1000 100 10 1 -10000 -1 -10 IC[mA], COLLECTOR CURRENT 1000 Figure 4. Collector Output Capacitance -10 10 -0.1 -1 IC[A], COLLECTOR CURRENT Figure 5. Current Gain Bandwidth Product http://www.SeCoSGmbH.com/ IC MAX(DC) -1 1m s Dis Lim sipat ite ion d s/b Lim ite d -0.1 VCEOMAX IC[A], COLLECTOR CURRENT 100 10 ms s 0u 10 VCE =5V IC MAX(Pulse) 1 -0.01 -100 VCB[V], COLLECTOR-BASE VOLTAGE Figure 3. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage fT[MHz], CURRENT GAIN BANDWIDTH PRODUCT -10000 -1000 -1 01-Jun-2004 Rev. B -1000 Figure 2. DC current Gain Cob[pF], CAPACITANCE VCE(sat),VBE(sat)[mV] SATURATION VOLTAGE Figure 1. Static Characteristic -10000 -100 IC[mA], COLLECTOR CURRENT -0.01 -1 -10 -100 VCE[V], COLLECTOR-EMITTER VOLTAGE Figure 6. Safe Operating Area Any changing of specification will not be informed individual Page 2of 2