S9015 PNP Silicon Low Frequency, Low Noise Amplifier Elektronische Bauelemente RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free SOT-23 FEATURES Collector 3 3 Power dissipation 1 Dim Min Max A 2.800 3.040 B 1.200 1.400 C 0.890 1.110 D 0.370 0.500 G 1.780 2.040 H 0.013 0.100 J 0.085 0.177 K 0.450 0.600 L 0.890 1.020 S 2.100 2.500 V 0.450 0.600 1 PCM : 0.2 W Collector Current ICM : -0.1 A Collector-base voltage 2 Base 2 A Emitter L V(BR)CBO : -50 V 3 1 Tj, Tstg : - 55 C ~ + 150 C O B S Top View Operating & storage junction temperature 2 O V G All Dimension in mm C H D J K ELECTRICAL CHARACTERISTICS ( Tamp.=25 C unless otherwise specified) O Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO Ic= -100µA, IE=0 -50 V Collector-emitter breakdown voltage V(BR)CEO Ic= -0.1mA, IB=0 -45 V Emitter-base breakdown voltage V(BR)EBO IE=-100µA, IC=0 -5 V Collector cut-off current ICBO VCB=-50V, IE=0 -0.1 µA Emitter cut-off current IEBO VEB= -5V, IC=0 -0.1 µA DC current gain hFE(1) VCE=-5V, IC= -1mA Collector-emitter saturation voltage VCE(sat) IC=-100mA, IB= -10mA -0.3 V Base-emitter saturation voltage VBE(sat) IC=-100mA, IB=-10mA -1 V fT Transition frequency VCE=-5V, IC= -10mA f=30MHz 200 1000 150 MHz CLASSIFICATION OF hFE(1) Rank Range DEVICE MARKING http://www.SeCoSGmbH.com 01-Jun-2004 Rev. B L H 200-450 450-1000 S9015 = M6 Any changing of specification will not be informed individual Page 1 of 2 S9015 PNP Silicon Low Frequency, Low Noise Amplifier Elektronische Bauelemente Typical Characteristics IC [mA], COLLECTOR CURRENT -50 -1000 VCE = -5V IB = -400µA IB = -350µA -40 hFE, DC CURRENT GAIN IB = -300µA IB = -250µA -30 IB = -200µA IB = -150µA -20 IB = -100µA -10 IB = -50µA -100 -0 -0 -2 -4 -6 -8 -10 -12 -14 -16 -18 -10 -0.1 -20 VCE [V], COLLECTOR-EMITTER VOLTAGE -10 -100 -1000 IC [mA], COLLECTOR CURRENT Figure 1. Static Characteristic Figure 2. DC current Gain -1000 VBE(sat), V CE(sat)[mV], SATURATION VOLTAGE -1 -100 VCE = -5V IC [mA], COLLECTOR CURRENT VBE (sat) -100 VCE (sat) IC = 20 IB -10 -0.1 -1 -10 -10 -1 -0.1 -0.0 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 -100 VBE [V], BASE-EMITTER VOLTAGE IC [mA], COLLECTOR CURRENT f = 1 MHz IE = 0 10 1 -1 -10 -100 VCB [V], COLLECTOR-BASE VOLTAGE Figure 5. Collector Output Capacitance http://www.SeCoSGmbH.com 01-Jun-2004 Rev. B Figure 4. Base-Emitter On Voltage fT[MHz], CURRENT GAIN BANDWIDTH PRODUCT Cob [pF], OUTPUT CAPACITANCE Figure 3. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage 1000 VCE = -6V 100 10 -1 -10 IC [mA], COLLECTOR CURRENT Figure 6. Current Gian Bandwidth Product Any changing of specification will not be informed individual Page 2 of 2