2SC1623K 150 A, 60 V NPN Epitaxial Planar Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen and lead free DESCRIPTION The 2SC1623K is designed for use in driver stage of AF amplifier and general purpose application. PACKAGE DIMENSIONS SOT-23 3 Collector 1 Base 2 Emitter A L B S Top View 1 V J K 3 2 C G H D Dim Min Max A 2.800 3.040 B 1.200 1.400 C 0.890 1.110 D 0.370 0.500 G 1.780 2.040 H 0.013 0.100 J 0.085 0.177 K 0.450 0.600 L 0.890 1.020 S 2.100 2.500 V 0.450 0.600 All Dimension in mm ABSOLUTE MAXIMUM RATINGS at Ta = 25°C Parameter Symbol Ratings Unit Collector to Base Voltage VCBO 60 V Collector to Emitter Voltage VCEO 50 V Emitter to Base Voltage VEBO 5 V IC 100 mA Pc 200 mW TJ, TSTG +150, -55 ~ +150 ℃ Collector Currrent Total Power Dissipation Junction, Storage Temperature CHARACTERISTICS at Ta = 25°C Symbol Min. Typ. Max. Unit BVCBO 60 - - V IC=100uA BVCEO 50 - - V IC=1mA BVEBO 5 - - V IE=100uA ICBO - - 100 nA VCB=60V IEBO - - 100 nA VEB=5V *VCE(sat) - - 300 mV IC=100mA, IB=10mA V *VBE(sat)1 *hFE1 fT - - 1.0 90 - 600 - 250 - Test Conditions IC=100mA, IB=10mA VCE=6V, IC=1mA MHz VCE=6V, IC=10mA * Pulse Test: Pulse Width≦380μs, Duty Cycle≦2% CLASSIFICATION OF hFE1 Rank Range Marking 01-June-2002 Rev. A P Y G B 90 - 180 135 - 270 200 - 400 300 - 600 L4 L5 L6 L7 Page 1 of 3 2SC1623K Elektronische Bauelemente 150 A, 60 V NPN Epitaxial Planar Transistor CHARACTERISTIC CURVES 01-June-2002 Rev. A Page 2 of 3 2SC1623K Elektronische Bauelemente 01-June-2002 Rev. A 150 A, 60 V NPN Epitaxial Planar Transistor Page 3 of 3