SECOS BC807-25W

BC807-16W, -25W, -40W
-500 mA, -50 V
PNP Plastic Encapsulate Transistor
Elektronische Bauelemente
FEATURES
z
z
z
Ideally suited for automatic insertion
Epitaxial planar die construction
Complementary to BC817W
MARKING
16W:5A; 25W:5B; 40W:5C
PACKAGE DIMENSIONS
REF.
A
A1
A2
D
E
HE
Millimeter
Min.
Max.
0.80
1.10
0
0.10
0.80
1.00
1.80
2.20
1.15
1.35
1.80
2.40
REF.
L1
L
b
c
e
Q1
Millimeter
Min.
Max.
0.42 REF.
0.15
0.35
0.25
0.40
0.10
0.25
0.65 REF.
0.15 BSC.
ABSOLUTE MAXIMUM RATINGS at Ta = 25°C
Parameter
Symbol
Ratings
Unit
Collector to Base Voltage
VCBO
-50
V
Collector to Emitter Voltage
VCEO
-45
V
Emitter to Base Voltage
VEBO
-5
V
IC
500
mA
PC
200
mW
TJ, TSTG
+150, -55 ~ +150
℃
Collector Currrent
Collector Power Dissipation
Junction, Storage Temperature
CHARACTERISTICS at Ta = 25°C
Min.
Max.
Unit
BVCBO
Symbol
-50
-
V
IC = -10 uA, IE = 0
BVCEO
-45
-
V
IC = -10 mA, IB = 0
BVEBO
-5
-
V
IE = -1 uA, IC = 0
ICBO
-
-0.1
uA
VCB = -20V, IE = 0
ICEO
-
-0.2
uA
VCE = -20V, IB = 0
IEBO
-
-0.1
uA
VEB = -5V, IC = 0
VCE(sat)
-
-0.7
V
IC = -500mA, IB = -50 mA
V
VCE = -1 V, IC = -500 mA
VBE(on)
Test Conditions
-
-1.2
100
160
250
250
400
600
VCE = -1 V, IC = -100 mA
hFE(2)
40
-
VCE = -1 V, IC = -500 mA
fT
80
-
MHz
-
10
pF
hFE(1)
807-16W
807-25W
807-40W
COB
01-June-2002 Rev. A
VCE = -5 V, IC = -10 mA, f = 100MHz
VCB = -10V, f=1MHz
Page 1 of 3
BC807-16W, -25W, -40W
Elektronische Bauelemente
-500 mA, -50 V
PNP Plastic Encapsulate Transistor
CHARACTERISTIC CURVES
01-June-2002 Rev. A
Page 2 of 3
BC807-16W, -25W, -40W
Elektronische Bauelemente
-500 mA, -50 V
PNP Plastic Encapsulate Transistor
CHARACTERISTIC CURVES
01-June-2002 Rev. A
Page 3 of 3