BC807-16W, -25W, -40W -500 mA, -50 V PNP Plastic Encapsulate Transistor Elektronische Bauelemente FEATURES z z z Ideally suited for automatic insertion Epitaxial planar die construction Complementary to BC817W MARKING 16W:5A; 25W:5B; 40W:5C PACKAGE DIMENSIONS REF. A A1 A2 D E HE Millimeter Min. Max. 0.80 1.10 0 0.10 0.80 1.00 1.80 2.20 1.15 1.35 1.80 2.40 REF. L1 L b c e Q1 Millimeter Min. Max. 0.42 REF. 0.15 0.35 0.25 0.40 0.10 0.25 0.65 REF. 0.15 BSC. ABSOLUTE MAXIMUM RATINGS at Ta = 25°C Parameter Symbol Ratings Unit Collector to Base Voltage VCBO -50 V Collector to Emitter Voltage VCEO -45 V Emitter to Base Voltage VEBO -5 V IC 500 mA PC 200 mW TJ, TSTG +150, -55 ~ +150 ℃ Collector Currrent Collector Power Dissipation Junction, Storage Temperature CHARACTERISTICS at Ta = 25°C Min. Max. Unit BVCBO Symbol -50 - V IC = -10 uA, IE = 0 BVCEO -45 - V IC = -10 mA, IB = 0 BVEBO -5 - V IE = -1 uA, IC = 0 ICBO - -0.1 uA VCB = -20V, IE = 0 ICEO - -0.2 uA VCE = -20V, IB = 0 IEBO - -0.1 uA VEB = -5V, IC = 0 VCE(sat) - -0.7 V IC = -500mA, IB = -50 mA V VCE = -1 V, IC = -500 mA VBE(on) Test Conditions - -1.2 100 160 250 250 400 600 VCE = -1 V, IC = -100 mA hFE(2) 40 - VCE = -1 V, IC = -500 mA fT 80 - MHz - 10 pF hFE(1) 807-16W 807-25W 807-40W COB 01-June-2002 Rev. A VCE = -5 V, IC = -10 mA, f = 100MHz VCB = -10V, f=1MHz Page 1 of 3 BC807-16W, -25W, -40W Elektronische Bauelemente -500 mA, -50 V PNP Plastic Encapsulate Transistor CHARACTERISTIC CURVES 01-June-2002 Rev. A Page 2 of 3 BC807-16W, -25W, -40W Elektronische Bauelemente -500 mA, -50 V PNP Plastic Encapsulate Transistor CHARACTERISTIC CURVES 01-June-2002 Rev. A Page 3 of 3