SS8550 PNP Silicon General Purpose Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free Collector 3 FEATURES Power dissipation 1 Base PCM : 0.3 W Collector Current ICM : - 1.5 A Collector-base voltage V(BR)CBO : - 40 V Operating & storage junction temperature TJ, TSTG : - 55°C ~ + 150°C z z z z SOT-23 3 Collector 1 Base 2 Emitter 2 Emitter A L K 3 B S Top View 1 V J 2 C G D H Dim Min Max A 2.800 3.040 B 1.200 1.400 C 0.890 1.110 D 0.370 0.500 G 1.780 2.040 H 0.013 0.100 J 0.085 0.177 K 0.450 0.600 L 0.890 1.020 S 2.100 2.500 V 0.450 0.600 All Dimension in mm ELECTRICAL CHARACTERISTICS at Ta = 25°C Symbol Min. Typ. Max. Unit Test Conditions BVCBO -40 - - V Ic = 100μA, IE = 0 BVCEO -25 - - V Ic = -0.1mA, IB = 0 BVEBO -5 - - V IE = -100μA, IC = 0 ICBO - - -0.1 μA VCB = -40 V, IE = 0 ICEO - - -0.1 μA VCE = -20V, IB = 0 IEBO - - -0.1 μA VEB = -5V, IC = 0 VCE(sat) - - 0.5 V IC = -800 mA, IB = -80mA VBE(sat)1 - - 1.2 V IC = -800 mA, IB = -80mA 120 - 350 - VCE= -1V, IC=-100mA *hFE2 40 - - - VCE = -1V, IC = -800mA fT 100 - - MHz - - 20 pF *hFE1 COB VCE = -10V, IC = -50mA, f = 30MHz VCB= -10V, IE=0, f=1MHz CLASSIFICATION OF hFE(1) Rank Range Marking 01-June-2005 Rev. B L H J 120 - 200 200-350 300-400 Y2 Page 1 of 2 SS8550 Elektronische Bauelemente PNP Silicon General Purpose Transistor CHARACTERISTIC CURVES 01-June-2005 Rev. B Page 2 of 2