2SC1623 150 mA, 60 V NPN Epitaxial Planar Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen and lead free DESCRIPTION The 2SC1623 is designed for use driver stage of AF amplifier and general purpose application. PACKAGE DIMENSIONS SC-59 A L S 2 3 Top View Dim Min A 2.70 3.10 B 1.30 1.70 B 1 D C 1.00 1.30 D 0.35 0.50 1.90 REF. G G J C K H COLLECTOR BASE Max H 0.00 0.10 J 0.10 0.26 K 0.20 0.60 L 1.25 1.65 S 2.25 3.00 All Dimension in mm EMITTER ABSOLUTE MAXIMUM RATINGS at Ta = 25°C Parameter Symbol Ratings Unit Collector to Base Voltage VCBO 60 V Collector to Emitter Voltage VCEO 50 V Emitter to Base Voltage VEBO 5 V IC 150 mA Pd 250 mW TJ, TSTG +150, -55 ~ +150 ℃ Collector Currrent Total Power Dissipation Junction, Storage Temperature CHARACTERISTICS at Ta = 25°C Symbol Min. Typ. Max. Unit Test Conditions BVCBO 60 - - V IC=100uA BVCEO 50 - - V IC=1mA BVEBO 5 - - V IE=10uA ICBO - - 100 nA VCB=60V IEBO - - 100 nA VEB=5V *VCE(sat) - - 250 mV IC=100mA, IB=10mA V IC=100mA, IB=10mA *VBE(sat)1 - - 1.0 *hFE1 90 - 600 *hFE2 25 - - VCE=6V, IC=150mA *hFE3 80 - - VCE=1V, IC=10mA fT 80 - - MHz - - 3.5 pF Cob VCE=6V, IC=1mA VCE=10V, IC=1mA, f=100MHz VCB=10V, f=1MHz, IE=0A * Pulse Test: Pulse Width≦380μs, Duty Cycle≦2% CLASSIFICATION OF hFE1 Rank Range 01-June-2002 Rev. A P Y G B 90 - 180 135 - 270 200 - 400 300 - 600 Page 1 of 2 2SC1623 Elektronische Bauelemente 150 mA, 60 V NPN Epitaxial Planar Transistor CHARACTERISTIC CURVES 01-June-2002 Rev. A Page 2 of 2