SMBT772SS -3 A, -40 V PNP Epitaxial Planar Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DESCRIPTION The SMBT772SS is a medium power low voltage transistor, designed for audio power amplifier, DC-DC converter and voltage regulator. FEATURES High current output up to -3 A Low saturation voltage PACKAGE DIMENSIONS SC-59 A L S 1 3 Top View 3 B 2 1 2 Dim Min Max A 2.70 3.10 B 1.30 1.70 C 1.00 1.30 D 0.35 0.50 G D G J C K H 1.90 REF. H 0.00 0.10 J 0.10 0.26 K 0.20 0.60 L 0.85 1.15 S 2.25 3.00 All Dimension in mm ABSOLUTE MAXIMUM RATINGS at Ta = 25°C Parameter Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Total Power Dissipation Junction, Storage Temperature Symbol Ratings Unit VCBO VCEO VEBO IC Pd TJ, TSTG -40 -30 -5 -3 750 +150, -55 ~ +150 V V V A mW ℃ CHARACTERISTICS at Ta = 25°C Symbol Min. Typ. Max. Unit Test Conditions -40 -30 -5 - -1.0 80 55 -1 -1 -0.5 -2.0 500 - V V V uA uA V V IC=-100uA, IE = 0 IC=-1mA, IB = 0 IE=-10uA, IC = 0 VCB=-30V, IE = 0 VEB=-3V, IC = 0 IC=-2A, IB=-200mA IC=-2A, IB=-200mA VCE=-2V, IC=-20mA VCE=-2V, IC=-1A VCE=-5V, IC=-100mA, f=100MHz VCB=-10V, f=-1MHz * Pulse Test: Pulse Width≦380us, Duty Cycle≦2% BVCBO BVCEO BVEBO ICBO IEBO *VCE(sat) *VBE(sat) *hFE1 *hFE2 fT Cob 30 100 - MHz pF CLASSIFICATION OF hFE2 Rank Q P E Range 100 - 200 160 - 320 200 - 500 01-June-2002 Rev. A Page 1 of 3 SMBT772SS Elektronische Bauelemente -3 A, -40 V PNP Epitaxial Planar Transistor CHARACTERISTICS CURVE 01-June-2002 Rev. A Page 2 of 3 SMBT772SS Elektronische Bauelemente -3 A, -40 V PNP Epitaxial Planar Transistor CHARACTERISTICS CURVE (cont’d) 01-June-2002 Rev. A Page 3 of 3