SMBT882SS NPN Silicon Epitaxial Planar Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen free DESCRIPTION The SMBT882SS is a medium power low voltage transistor, designed for audio power amplifier, DC-DC converter and voltage regulator. FEATURES High current output up to 3A Low saturation voltage PACKAGE DIMENSIONS SC-59 A L S 2 3 Top View Dim Min A 2.70 3.10 B 1.30 1.70 B 1 D C 1.00 1.30 D 0.35 0.50 G G J C K H COLLECTOR BASE Max 1.90 REF. H 0.00 0.10 J 0.10 0.26 K 0.20 0.60 L 1.25 1.65 S 2.25 3.00 All Dimension in mm EMITTER ABSOLUTE MAXIMUM RATINGS at Ta = 25°C Parameter Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Total Power Dissipation Junction, Storage Temperature Symbol Ratings Unit VCBO VCEO VEBO IC Pd TJ, TSTG 40 30 5.0 3.0 750 +150, -55 ~ +150 V V V A mW ℃ CHARACTERISTICS at Ta = 25°C Symbol BVCBO BVCEO BVEBO ICBO IEBO *VCE(sat) *VBE(sat) *hFE1 *hFE2 fT Cob Min. Typ. Max. Unit 40 30 5.0 30 100 - - 1.0 1.0 0.5 2.0 500 - V V V μA μA V V 90 45 MHz pF Test Conditions IC=100uA, IE = 0 IC=1mA, IB=0 IE=10uA, IC=0 VCB=30V, IE= 0 VEB=3V, IC= 0 IC=2A, IB=200mA IC=2A, IB=200mA VCE=2V, IC=20mA VCE=2V, IC=1 A VCE=5V, IC=100mA, f=100MHz VCB=10V, f=1MHz * Pulse Test: Pulse Width≦380μs, Duty Cycle≦2% CLASSIFICATION OF hFE2 Rank Q P E Range 100 - 200 160 - 320 200 - 500 01-June-2002 Rev. A Page 1 of 3 SMBT882SS Elektronische Bauelemente NPN Silicon Epitaxial Planar Transistor CHARACTERISTICS CURVE 01-June-2002 Rev. A Page 2 of 3 SMBT882SS Elektronische Bauelemente NPN Silicon Epitaxial Planar Transistor CHARACTERISTICS CURVE (cont’d) 01-June-2002 Rev. A Page 3 of 3