SECOS SMBT882SS

SMBT882SS
NPN Silicon
Epitaxial Planar Transistor
Elektronische Bauelemente
RoHS Compliant Product
A suffix of “-C” specifies halogen free
DESCRIPTION
The SMBT882SS is a medium power low voltage transistor, designed for audio power amplifier, DC-DC converter and
voltage regulator.
FEATURES
 High current output up to 3A
 Low saturation voltage
PACKAGE DIMENSIONS
SC-59
A
L
S
2
3
Top View
Dim
Min
A
2.70
3.10
B
1.30
1.70
B
1
D
C
1.00
1.30
D
0.35
0.50
G
G
J
C
K
H
COLLECTOR
BASE
Max
1.90 REF.
H
0.00
0.10
J
0.10
0.26
K
0.20
0.60
L
1.25
1.65
S
2.25
3.00
All Dimension in mm
EMITTER
ABSOLUTE MAXIMUM RATINGS at Ta = 25°C
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
Junction, Storage Temperature
Symbol
Ratings
Unit
VCBO
VCEO
VEBO
IC
Pd
TJ, TSTG
40
30
5.0
3.0
750
+150, -55 ~ +150
V
V
V
A
mW
℃
CHARACTERISTICS at Ta = 25°C
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
*VCE(sat)
*VBE(sat)
*hFE1
*hFE2
fT
Cob
Min.
Typ.
Max.
Unit
40
30
5.0
30
100
-
-
1.0
1.0
0.5
2.0
500
-
V
V
V
μA
μA
V
V
90
45
MHz
pF
Test Conditions
IC=100uA, IE = 0
IC=1mA, IB=0
IE=10uA, IC=0
VCB=30V, IE= 0
VEB=3V, IC= 0
IC=2A, IB=200mA
IC=2A, IB=200mA
VCE=2V, IC=20mA
VCE=2V, IC=1 A
VCE=5V, IC=100mA, f=100MHz
VCB=10V, f=1MHz
* Pulse Test: Pulse Width≦380μs, Duty Cycle≦2%
CLASSIFICATION OF hFE2
Rank
Q
P
E
Range
100 - 200
160 - 320
200 - 500
01-June-2002 Rev. A
Page 1 of 3
SMBT882SS
Elektronische Bauelemente
NPN Silicon
Epitaxial Planar Transistor
CHARACTERISTICS CURVE
01-June-2002 Rev. A
Page 2 of 3
SMBT882SS
Elektronische Bauelemente
NPN Silicon
Epitaxial Planar Transistor
CHARACTERISTICS CURVE (cont’d)
01-June-2002 Rev. A
Page 3 of 3