M8550T -0.8A , -40V PNP Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free TO-92 FEATURE Power Dissipation A D B E C G H F 1Emitter 2Base 3Collector J Collector 3 1 Base 2 Emitter ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified) Parameter Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current - Continuous Collector Power Dissipation Junction, Storage Temperature Symbol Ratings Unit VCBO VCEO VEBO IC PC TJ, TSTG -40 -25 -6 -800 625 125, -55~125 V V V mA mW °C ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Collector to Base Breakdown Voltage Collector to Emitter Breakdown Voltage Emitter to Base Breakdown Voltage Collector Cut-Off Current Collector Cut-Off Current V(BR)CBO V(BR)CEO V(BR)EBO ICBO ICEO hFE(1) hFE(2) hFE(3) VCE(sat) VBE(sat) fT -40 -25 -6 45 80 40 80 - -0.1 -0.1 400 -0.5 -1.2 - V V V µA µA DC Current Gain Collector to Emitter Saturation Voltage Base to Emitter Saturation Voltage Transition Frequency V V MHz Test condition IC=100µA, IE=0 IC=0.1mA, IB=0 IE=100µA, IC=0 VCB=-35V, IE=0 VCE=-20V, IB=0 VCE=-1V, IC=-5mA VCE=-1V, IC=-100mA VCE=-1V, IC=-800mA IC=-800mA, IB=-80mA IC=-800mA, IB=-80mA VCE=-6V, IC=-20mA, f=30MHz *Pulse Test：pulse width ≦ 300 µs, duty cycle ≦ 2%. http://www.SeCoSGmbH.com/ 29-Apr-2011 Rev. A Any changes of specification will not be informed individually. Page 1 of 2 M8550T Elektronische Bauelemente -0.8A , -40V PNP Plastic Encapsulated Transistor CHARACTERISTIC CURVES http://www.SeCoSGmbH.com/ 29-Apr-2011 Rev. A Any changes of specification will not be informed individually. Page 2 of 2