MMBT2907AW PNP Silicon General Purpose Transistor Elektronische Bauelemente RoHS Compliant Product SOT-323 A suffix of “-C” specifies halogen & lead-free FEATURE A Complementary NPN Type Available(MMBT2222AW) Epitaxial Planar Die Construction Ideal for Medium Power Amplification and Switching L 3 3 C B Top View 1 1 2 K E 2 D COLLECTOR F 3 MARKING CODE MMBT2907AW = K3F, 20 REF. 1 A B C D E F BASE 2 H G Millimeter Min. Max. 1.80 2.20 1.80 2.45 1.15 1.35 0.80 1.10 1.20 1.40 0.20 0.40 J REF. G H J K L Millimeter Min. Max. 0.100 REF. 0.525 REF. 0.08 0.25 0.650 TYP. EMITTER ABSOLUTE MAXIMUM RATINGS at Ta = 25°C SYMBOL RATINGS UNIT Collector to Base Voltage PARAMETER VCBO -60 V Collector to Emitter Voltage VCEO -60 V Emitter to Base Voltage VEBO -5 V Collector Currrent IC -600 mA Total Power Dissipation PD 200 mW TJ, TSTG +150, -55 ~ +150 ℃ Junction, Storage Temperature ELECTRICAL CHARACTERISTICS at Ta = 25°C CHARACTERISTIC TEST CONDITION SYMBOL MIN. IC=-10μA, IE=0 BVCBO -60 V IC = -10 mA, IB = 0 BVCEO -60 V Emitter=Base Breakdown Voltage IE=-10μA, IC=0 BVEBO -5 V Collector Cutoff Current VCB=-50V, IE=0 ICBO -100 nA Collector Cutoff Current VEB=-30V, IB=0 ICES -100 nA Emitter Cutoff Current VEB=-3V, IC=0 IEBO -100 nA Transition Frequency VCE=-10V, IC=-0.1mA VCE=-10V, IC=-1mA VCE=-10V, IC=-10mA VCE=-10V, IC=-150mA VCE=-10V, IC=-500mA IC=-150mA, IB=-15mA IC=-500mA, IB=-50mA IC=-150mA, IB=-15mA IC=-500mA, IB=-50mA VCE=-20V, IC=-50mA, f=100MHz hFE1 hFE2 hFE3 hFE4 hFE5 VCE(sat) VCE(sat) VBE(sat) VBE(sat) fT Output Capacitance VCB=-10V, IE=0, f=0.1MHz Input Capacitance Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage DC Current Gain Collector-emitter Saturation Voltage Base-Emitter Saturation Voltage Delay Time Rise Time Storage Time Fall Time 20-Oct-2009 Rev. C 75 100 100 100 50 MAX. UNIT 300 -0.4 -1.6 -1.3 -2.6 V V V V MHz Cobo 8 pF VEB=-2V, IC=0, f=0.1MHz Cib 30 pF Vcc=-30V, VBE(Off)=-1.5V IC=-150mA, IB1=-15mA Vcc=-30V, IC=-150mA IB1=- IB2 =-15mA Td Tr TS TF 10 40 80 30 nS nS nS nS -0.6 200 Page 1 of 3 MMBT2907AW Elektronische Bauelemente PNP Silicon General Purpose Transistor CHARACTERISTIC CURVES 20-Oct-2009 Rev. C Page 2 of 3 MMBT2907AW Elektronische Bauelemente PNP Silicon General Purpose Transistor CHARACTERISTIC CURVES 20-Oct-2009 Rev. C Page 3 of 3