MMBT2222AW NPN Silicon General Purpose Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOT-323 FEATURE Complementary PNP Type Available(MMBT2907AW) Epitaxial Planar Die Construction Ideal for Medium Power Amplification and Switching A L 3 3 C B Top View 1 1 K 2 E 2 D MARKING CODE F G H J MMBT2222AW = K3P, 1P REF. A B C D E F Millimeter Min. Max. 1.80 2.20 1.80 2.45 1.15 1.35 0.80 1.10 1.20 1.40 0.20 0.40 REF. G H J K L Millimeter Min. Max. 0.100 REF. 0.525 REF. 0.08 0.25 0.650 TYP. ABSOLUTE MAXIMUM RATINGS at Ta = 25°C Parameter Symbol Ratings Unit Collector to Base Voltage VCBO 75 V Collector to Emitter Voltage VCEO 40 V Emitter to Base Voltage VEBO 6 V IC 600 mA PC 200 mW TJ, TSTG +150, -55 ~ +150 ℃ Collector Currrent Total Power Dissipation Junction, Storage Temperature 20-Oct-2009 Rev. C Page 1 of 4 MMBT2222AW NPN Silicon General Purpose Transistor Elektronische Bauelemente ELECTRICAL CHARACTERISTICS at Ta = 25°C CHARACTERISTIC TEST CONDITION SYMBOL MIN. Collector-Base Breakdown Voltage IC=10μA, IE=0 V(BR)CBO 75 V Collector-Emitter Breakdown Voltage IC = 10 mA, IB = 0 V(BR)CEO 40 V Emitter=Base Breakdown Voltage IE=-10μA, IC=0 V(BR)EBO 6 V Collector Cutoff Current VCB=70V, IE=0 ICBO 100 nA Collector Cutoff Current VEB=35V, IC=0 ICEO 100 nA Emitter Cutoff Current VEB=3V, IC=0 IEBO 100 nA VCE=10V, IC=-0.1mA hFE1 35 VCE=10V, IC=1mA hFE2 50 VCE=10V, IC=10mA hFE3 75 VCE=10V, IC=150mA hFE4 100 VCE=10V, IC=500mA hFE5 40 VCE=1V, IC=500mA hFE6 35 IC=500mA, IB=50mA VCE(sat) 1 V IC=150mA, IB=15mA VCE(sat) 0.3 V IC=500mA, IB=50mA VBE(sat) 2.0 V IC=150mA, IB=15mA VBE(sat) 1.2 V DC Current Gain Collector-emitter Saturation Voltage Base-Emitter Saturation Voltage MAX. UNIT 300 Transition Frequency VCE=20V, IC=20mA, f=1MHz fT Output Capacitance VCB=10V, IE=0, f=1MHz Cob 8 pF Delay Time Vcc=30V, VBE(Off)=-0.5V IC=150mA, IB1=15mA Td 10 nS Tr 25 nS Vcc=30V, IC=150mA IB1=- IB2 =15mA TS 225 nS TF 60 nS Rise Time Storage Time Fall Time 20-Oct-2009 Rev. C 300 MHz Page 2 of 4 MMBT2222AW Elektronische Bauelemente NPN Silicon General Purpose Transistor CHARACTERISTIC CURVES 20-Oct-2009 Rev. C Page 3 of 4 MMBT2222AW Elektronische Bauelemente NPN Silicon General Purpose Transistor CHARACTERISTIC CURVES 20-Oct-2009 Rev. C Page 4 of 4