MMBTA92 PNP Silicon Elektronische Bauelemente General Purpose Transistor RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free FEATURES SOT-23 Dim Min Max Power dissipation & Collector current Pcm: 0.3W Icm: -0.3A A 2.800 3.040 B 1.200 1.400 High voltage V(BR): -300V C 0.890 1.110 Pb-free is available. A L 3 COLLECTOR B S Top View 3 1 V 1 2 G 3 BASE C 1 2 2 EMITTER ELECTRICAL CHARACTERISTICS Parameter H D Tamb=25 C unless Symbol otherwise Test 0.370 0.500 1.780 2.040 H 0.013 0.100 J 0.085 0.177 K 0.450 0.600 L 0.890 1.020 S 2.100 2.500 V 0.450 0.600 All Dimension in mm J K D G specified conditions Collector-base breakdown voltage V(BR)CBO Ic= -100uA， IE=0 Collector-emitter breakdown voltage V(BR)CEO Ic= -1 mA， Emitter-base breakdown voltage V(BR)EBO IE= -100XA， IC=0 Collector cut-off current ICBO VCB=-200 V , IE=0 Emitter cut-off current IEBO VEB= -5V , IB=0 MIN MAX UNIT -300 V -300 V -5 V IC=0 -0.25 μA -0.1 μA HFE（1） VCE= -10V, IC= - 1mA 60 HFE（2） VCE= -10V, IC=-10mA 100 HFE（3） VCE=-10V, IC=-30mA 60 Collector-emitter saturation voltage VCE(sat) IC=-20 mA, IB= -2mA -0.2 V Base-emitter saturation voltage VBE(sat) IC= -20 m A, IB=-2mA -0.9 V DC current gain 200 VCE=-20V, IC=-10mA Transition frequency fT 50 MHz f=30MHz DEVICE MARKING DEVICE MARKING MMBTA92=2D http://www.SeCoSGmbH.com 01-Jun-2004 Rev.B Any changing of specification will not be informed individual Page 1 of 2 MMBTA92 PNP Silicon Elektronische Bauelemente General Purpose Transistor MMBTA92 300 hFE , DC CURRENT GAIN VCE = 10 Vdc TJ = +125°C 250 200 25°C 150 −55°C 100 50 0 0.1 1.0 10 100 IC, COLLECTOR CURRENT (mA) Figure 1. DC Current Gain f, T CURRENT−GAIN BANDWIDTH (MHz) 100 C, CAPACITANCE (pF) Cib @ 1MHz 10 Ccb @ 1MHz 1.0 0.1 0.1 1.0 10 100 VR, REVERSE VOLTAGE (VOLTS) 1000 Figure 2. Capacitance 150 130 110 90 70 50 TJ = 25°C VCE = 20 Vdc F = 20 MHz 30 10 1 3 5 11 13 15 7 9 IC, COLLECTOR CURRENT (mA) 17 19 21 Figure 3. Current−Gain − Bandwidth 1.4 V, VOLTAGE (VOLTS) 1.2 VCE(sat) @ 25°C, IC/IB = 10 VCE(sat) @ 125°C, IC/IB = 10 VCE(sat) @ −55°C, IC/IB = 10 VBE(sat) @ 25°C, IC/IB = 10 1.0 0.8 VBE(sat) @ 125°C, IC/IB = 10 VBE(sat) @ −55°C, IC/IB = 10 VBE(on) @ 25°C, VCE = 10 V VBE(on) @ 125°C, VCE = 10 V VBE(on) @ −55°C, VCE = 10 V 0.6 0.4 0.2 0.0 0.1 1.0 10 IC, COLLECTOR CURRENT (mA) 100 Figure 4. “ON” Voltages http://www.SeCoSGmbH.com 01-Jun-2004 Rev. B Any changing of specification will not be informed individual Page 2 of 2