PZT4401 NPN Transistor Elektronische Bauelemente Epitaxial Planar Transistor RoHS Compliant Product SOT-223 Description The PZT4401 is designed for general purpose switching and amplifier applications. Features *High Power Dissipation: 1500mW at 25 o C *High DC Current Gain: 100~300 at 150mA *Complementary to PZT4403 REF. 4 4 0 1 Date Code B ABSOLUTE MAXIMUM RATINGS A C D E I H C Millimeter Min. Max. 6.70 7.30 2.90 3.10 0.02 0.10 0 10 0.60 0.80 0.25 0.35 E REF. B J 1 2 3 4 5 Millimeter Min. Max. 13 TYP. 2.30 REF. 6.30 6.70 6.30 6.70 3.30 3.70 3.30 3.70 1.40 1.80 o Ta=25 C Symbol Value Units VCBO Collector-Base Voltage 60 V VCEO VEBO Collector-Emitter Voltage Emitter-Base Voltage 40 Collector Current (Continous) 600 V V mA IC PD TJ,Tstg Parameter 5 Total Power Dissipation W 1.5 Junction and Storage Temperature -55~+150 C O o ELECTRICAL CHARACTERISTICS Tamb=25 C unless otherwise specified Parameter Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Base Cutoff Current Collector Saturation Voltage Base Satruation Voltage DC Current Gain Symbol BVCBO *BVCEO BVEBO I CES *VCE(sat)1 *VCE(sat)2 *VBE(sat)1 Output Capacitance 5 - Typ. - 750 - 20 40 - 80 - *hFE5 100 40 fT Cob 250 - - *VBE(sat)2 *hFE1 *hFE2 *hFE3 *hFE4 Gain-Bandwidth Product Min 60 40 Max - Unit V V V 100 400 nA Test Conditions I C= 100µA I C= 1mA I E= 10µA VCE= 35V,VBE=0.4V mV I C=150mA,IB=15mA mV mV I C=500mA,IB=50mA I C=150mA,IB=15mA V I C=500mA,IB=50mA 750 950 1.2 - VCE= 1 V, I C=0.1 mA VCE= 1 V, I C=1mA - VCE= 1 V, I C=10 mA 300 6.5 MH z pF VCE= 1 V, I C=150mA VCE= 2 V, I C=500mA VCE= 10 V, IC= 20mA,f=100MHz VCB= 5 V , f=1MHz *Pulse width≦380µs, Duty Cycle≦2% Classification of hFE4 Rank Range http://www.SeCoSGmbH.com 01-Jun-2002 Rev. A Q 100~210 R 190~300 Any changing of specification will not be informed individual Page 1 of 2 PZT4401 Elektronische Bauelemente NPN Transistor Epitaxial Planar Transistor Characteristics Curve http://www.SeCoSGmbH.com 01-Jun-2002 Rev. A Any changing of specification will not be informed individual Page 2 of 2